型号 功能描述 生产厂家&企业 LOGO 操作
IRF252

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

SamsungSamsung Group

三星三星半导体

Samsung
IRF252

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Integrated Circuits Division

IXYS
IRF252

N-CHANNEPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF252

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF252

NanosecondSwitchingSpeed

DESCRIPTION •DrainCurrentID=25A@TC=25℃ •DrainSourceVoltage:VDSS=200V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.12Ω(Max) •NanosecondSwitchingSpeed APPLICATIONS •Switchingpowersupplies •Switchingconverters,motordriver,relaydriver

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TwoAxis,MinistickControllerWithOptionalMomentarySwitch

文件:618.31 Kbytes Page:2 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

Compactfanwithlowpowerconsumption

文件:287.37 Kbytes Page:4 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialcompactfan

文件:394.66 Kbytes Page:4 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialcompactfan

文件:394.65 Kbytes Page:4 Pages

EBMPAPST

ebm-papst

EBMPAPST

FIELDPROGRAMMABLEDUALOUTPUTSSVERSACLOCKSYNTHESIZER

文件:115.15 Kbytes Page:10 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IRF252产品属性

  • 类型

    描述

  • 型号

    IRF252

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    N-CHANNEL POWER MOSFETS

更新时间:2024-4-19 16:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
17+
TO-220
31518
原装正品 可含税交易
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR
23+
TO-3
9888
专做原装正品,假一罚百!
IR/VISHAY
23+
TO-220
6000
原装正品,支持实单
IR
TO-3
10000
MOTOROLA
21+
TO-3
35210
一级代理/放心采购
MOTOROLA
1635+
1
6000
好渠道!好价格!一片起卖!
IR
22+
35000
OEM工厂,中国区10年优质供应商!
IR
23+
65480
IR
21+
TO-3
12588
原装正品,自己库存 假一罚十

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