IRF250价格

参考价格:¥68.7847

型号:IRF250 品牌:INTERNATIONAL RECTIFIER 备注:这里有IRF250多少钱,2024年最近7天走势,今日出价,今日竞价,IRF250批发/采购报价,IRF250行情走势销售排行榜,IRF250报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF250

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Integrated Circuits Division

IXYS
IRF250

N-CHANNEPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF250

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
IRF250

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

SamsungSamsung Group

三星三星半导体

Samsung
IRF250

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

文件:84.86 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
IRF250

N-CHANNELPOWERMOSFET

文件:22.05 Kbytes Page:2 Pages

SEME-LAB

Seme LAB

SEME-LAB

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

SamsungSamsung Group

三星三星半导体

Samsung

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Integrated Circuits Division

IXYS

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

N.CHANNELPOWERMOSFET

FEATURES •HERMETICALLYSEALEDSURFACEMOUNTPACKAGE •SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT •HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

SEME-LAB

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

文件:84.86 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

N-CHANNELPOWERMOSFET

文件:22.05 Kbytes Page:2 Pages

SEME-LAB

Seme LAB

SEME-LAB

IRMOSFET-StrongIRFET?

文件:1.06583 Mbytes Page:17 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-ChannelMOSFETTransistor

文件:335.12 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRMOSFET-StrongIRFET?

文件:1.06551 Mbytes Page:17 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-ChannelMOSFETTransistor

文件:334.9 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

CommercialComposition9mmDiameterVariableResistors

文件:1.41052 Mbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

Highpeakcurrentcarryingcapabilityupto6000A

文件:299.59 Kbytes Page:3 Pages

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

DCaxialfans

文件:375.69 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialfans

文件:345.75 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialfans

文件:505.68 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

IRF250产品属性

  • 类型

    描述

  • 型号

    IRF250

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 200V 30A 2PIN TO-204AA - Bulk

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-3

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET, N, TO-3

  • 制造商

    International Rectifier

  • 功能描述

    N CH MOSFET, 200V, 30A, TO-204AE; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    30A; Drain Source Voltage

  • Vds

    200V; On Resistance

  • Rds(on)

    85mohm; Rds(on) Test Voltage

  • Vgs

    10V; Threshold Voltage Vgs

  • Typ

    4V; No. of

  • Pins

    2 ;RoHS

  • Compliant

    No

  • 制造商

    TT Electronics/Semelab

  • 功能描述

    MOSFET N-Channel 200V 30A TO-3

更新时间:2024-3-28 18:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2020+
原厂封装
350000
100%进口原装正品公司现货库存
Infineon Technologies
23+
TO-247AC
30000
晶体管-分立半导体产品-原装正品
INFINEON
21+
TO-247
1036
十年信誉,只做原装,有挂就有现货!
INFINEON/英飞凌
2021+
TO-247
18259
原装进口假一罚十
IR
2339+
铁帽
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
2500
TO-247
INFINEON
2312
原装正品价格优惠,志同道合共谋发展
IR
23+
65480
IR
21+
9800
只做原装正品假一赔十!正规渠道订货!
IOR
23+
TO-3
7750
全新原装优势
IR
2017+
TO-3P
25899
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增

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