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IPD60R1K4C6价格
参考价格：￥2.0496
型号：IPD60R1K4C6 品牌：INFINEON 备注：这里有IPD60R1K4C6多少钱，2024年最近7天走势，今日出价，今日竞价，IPD60R1K4C6批发/采购报价，IPD60R1K4C6行情走势销售排行榜，IPD60R1K4C6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R1K4C6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IPD60R1K4C6 | 600VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPD60R1K4C6 | MaterialContentDataSheet 文件：33.25 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
600VCoolMOSC6PowerTransistorIPD60R1K4C6 Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MaterialContentDataSheet 文件：33.25 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IPD60R1K4C6产品属性
- 类型
描述
- 型号
IPD60R1K4C6
- 功能描述
MOSFET N-CH 650V 3.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
4500 |
原装正品假一罚百!可开增票! |
|||
INFINEON/英飞凌 |
23+ |
DPAK(TO-252) |
10000 |
公司只做原装正品 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
INFINEON/英飞凌 |
2021+ |
SOT-252 |
17708 |
原装进口假一罚十 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
10000 |
原厂原包原装公司现货库存,低价出售 |
|||
INFINEON/英飞凌 |
TO252 |
7906200 |
|||||
INFINEO |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON |
1816+ |
. |
6523 |
科恒伟业!只做原装正品,假一赔十! |
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IPD60R1K4C6数据表相关新闻
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：IPD60R170CFD7 类别分立半导体产品晶体管-FET，MOSFET-单个 制造商InfineonTechnologies 包装：2500 封装：TO-252-3
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https://hch01.114ic.com/
2020-11-13
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