位置：首页 > IC中文资料第52页 > IDT71V355
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Description TheIDT71V3556/58are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMS.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.Thus,theyhavebeengiventhenameZBTTM,orZeroBusTurnaround. Features | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
128Kx36,256Kx18,3.3VSynchronousZBTSRAMs3.3VI/O,BurstCounter,Flow-ThroughOutputs Description TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthebusaroundbetweenreadsandwrites,orwritesandreads.ThustheyhavebeengiventhenameZBTTM,or | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | |
IDT71V355产品属性
- 类型
描述
- 型号
IDT71V355
- 功能描述
IC SRAM 4MBIT 100MHZ 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 产品变化通告
Product Discontinuation 05/Nov/2008
- 标准包装
84
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步 ZBT
- 存储容量
4.5M（128K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
119-BGA
- 供应商设备封装
119-PBGA（14x22）
- 包装
托盘
- 其它名称
71V3557SA75BGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一级代理/放心采购 |
|||
IDT, Integrated Device Technol |
21+ |
165-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原装正品，支持实单 |
|||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
Renesas Electronics America In |
24+ |
119-BGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
IDT |
23+ |
119-BGA |
4129 |
原装现货 |
|||
IDT |
23+ |
119-PBGA(14x22) |
71890 |
专业分销产品!原装正品!价格优势! |
|||
IDT, Integrated Device Techno |
23+ |
119-PBGA14x22 |
7300 |
专注配单,只做原装进口现货 |
IDT71V355芯片相关品牌
IDT71V355规格书下载地址
IDT71V355参数引脚图相关
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- IDT71V3556S133BQ
- IDT71V3556S133BGI8
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- IDT71V3556S133BG8
- IDT71V3556S133BG
- IDT71V3556S100PFI8
- IDT71V3556S100PFI
- IDT71V3556S100PFGI8
- IDT71V3556S100PFGI
- IDT71V3556S100PFG8
- IDT71V3556S100BQGI8
- IDT71V3556S100BQGI
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- IDT71V3556S100BGI8
- IDT71V3556S100BGI
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- IDT71V3556S100BG
- IDT71V321S55TF8
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- IDT71V321S25TF
- IDT71V321S25PF8
- IDT71V321S25PF
- IDT71V321S25J8
- IDT71V321S25J
- IDT71V321L55TF8
- IDT71V321L55TF
- IDT7187
- IDT7164
- IDT7134
- IDT7133
- IDT7132
- IDT7130
- IDT7052
- IDT7037
- IDT7027
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- IDT7024
- IDT7016
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- IDT7006
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- IDT6168
- IDT6167
- IDT6129
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