位置：首页 > IC中文资料第12742页 > HY57V161610
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 |  |   | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationswhichrequirelowpowerconsumptionandindustrialtemperaturerange.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysynchrono | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationswhichrequirelowpowerconsumptionandindustrialtemperaturerange.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysynchrono | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationswhichrequirelowpowerconsumptionandindustrialtemperaturerange.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysynchrono | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationswhichrequirelowpowerconsumptionandindustrialtemperaturerange.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysynchrono | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationswhichrequirelowpowerconsumptionandindustrialtemperaturerange.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysynchrono | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHyundaiHY57V161610Disa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Disorganizedas2banksof524,288x16. HY57V161610Disofferingfullysync | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply •All | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES •Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
2Banksx512Kx16BitSynchronousDRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16.HY57V161610Eisofferingfullysynchronousoperati | HynixHynix Semiconductor SK海力士海力士半导体 | | |
HY57V161610产品属性
- 类型
描述
- 型号
HY57V161610
- 功能描述
x16 SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYUNDAI |
23+ |
SSOP |
18000 |
||||
HYUNDAI |
23+ |
NA/ |
30 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HYNIX/海力士 |
23+ |
TSOP-50 |
40000 |
全新原装现货特价销售,欢迎来电查询 |
|||
HYUNDAI |
23+ |
TSOP |
3000 |
特价库存 |
|||
HY |
21+ |
TSOP |
6500 |
只做原装正品假一赔十!正规渠道订货! |
|||
HYNIX/海力士 |
TSOP-50 |
32651 |
诚信经营 原盒原标 正品现货 价格美丽 假一罚十 |
||||
HYNIX/海力士 |
21+ |
TSOP |
10000 |
全新原装 公司现货 价优 |
|||
HYNIX |
2023+ |
TSOP |
3783 |
全新原厂原装产品、公司现货销售 |
|||
HY |
22+ |
TSSOP-50 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
HYNIX/海力士 |
12+ |
TSOP |
50 |
只做正品,原装现货实单来谈 |
HY57V161610芯片相关品牌
HY57V161610规格书下载地址
HY57V161610参数引脚图相关
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- HY57V161610DTC-55I
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- HY4903P
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- HY4504W
- HY4504P
HY57V161610数据表相关新闻
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