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HGTG20N60B3D价格
参考价格：￥16.9542
型号：HGTG20N60B3D 品牌：FAIRCHILD 备注：这里有HGTG20N60B3D多少钱，2024年最近7天走势，今日出价，今日竞价，HGTG20N60B3D批发/采购报价，HGTG20N60B3D行情走势销售排行榜，HGTG20N60B3D报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG20N60B3D | 40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTG20N60B3D | 40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
HGTG20N60B3D | 封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 600V 40A 165W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG20N60B3D产品属性
- 类型
描述
- 型号
HGTG20N60B3D
- 功能描述
IGBT 晶体管 600V IGBT UFS N-Channel
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2020+ |
TO247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INTERSIL |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
23+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
FSC |
2018+ |
TO-3P |
11256 |
只做进口原装正品!假一赔十! |
|||
FAIRCHIL |
23+ |
TO-247 |
8600 |
全新原装现货 |
|||
FSC |
23+ |
原厂原封 |
450 |
订货1周 原装正品 |
|||
ON/安森美 |
22+ |
SMD |
12800 |
本公司只做进口原装!优势低价出售! |
|||
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
||||
FSC |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Fairchild/ON |
21+ |
TO247 |
13880 |
公司只售原装,支持实单 |
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HGTG20N60B3D规格书下载地址
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