位置：首页 > IC中文资料第6255页 > HCS05D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HCS05D | Radiation Hardened Hex Inverter with Open Drain Description TheIntersilHCS05MSisaRadiationHardenedHexinverterfunctionwithopendrainoutputs.Theseopendrainoutputscandriveintoresistiveloadswithaseparatevoltagesupply. TheHCS05MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
HCS05D | Radiation Hardened Triple 3-Input NAND Gate Description TheIntersilHCS10MSisaRadiationHardenedTriple3-InputNANDGate.AhighonallinputsforcestheoutputtoaLowstate. TheHCS10MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicF | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
HCS05D | Radiation Hardened Triple 3-Input NAND Gate Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(SI)/s20nsPulse •Cos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
HCS05D | Radiation Hardened Hex Inverter with Open Drain Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
Radiation Hardened Hex Inverter with Open Drain Description TheIntersilHCS05MSisaRadiationHardenedHexinverterfunctionwithopendrainoutputs.Theseopendrainoutputscandriveintoresistiveloadswithaseparatevoltagesupply. TheHCS05MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Radiation Hardened Triple 3-Input NAND Gate Description TheIntersilHCS10MSisaRadiationHardenedTriple3-InputNANDGate.AhighonallinputsforcestheoutputtoaLowstate. TheHCS10MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicF | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Radiation Hardened Hex Inverter with Open Drain Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Radiation Hardened Triple 3-Input NAND Gate Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(SI)/s20nsPulse •Cos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
HCS05D产品属性
- 类型
描述
- 型号
HCS05D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened Triple 3-Input NAND Gate
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SONICREST |
SMD |
68900 |
原包原标签100%进口原装常备现货! |
||||
SONREST |
23+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
|||
MICROCHIP/微芯 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
Microchip |
23+ |
8DIP |
10000 |
原厂原装正品现货 |
|||
INTERSIL |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
Essentra |
22+ |
NA |
168 |
加我QQ或微信咨询更多详细信息, |
|||
H |
21+ |
CDIP |
645 |
航宇科工半导体-央企合格优秀供方! |
|||
Microchip(微芯) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MICROCHI |
23+ |
SOP |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
MICROCHI |
23+ |
原厂原装 |
6800 |
原装无铅,现货库存 |
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2020-7-17
DdatasheetPDF页码索引
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