位置：首页 > IC中文资料第6258页 > HAF2007
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HAF2007 | SiliconNChannelMOSFETSeriesPowerSwitching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 |  |   |
HAF2007 | SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFETSeriesPowerSwitching 文件：114.66 Kbytes Page：11 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-Channel60V(D-S)MOSFET 文件：1.04375 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
10BASETISOLATIONMAGNETICS 文件：74.83 Kbytes Page：2 Pages | XFMRS XFMRS，Inc. |  | | |
IECInterconnectionCordwithIECConnectorC13,V-Lock,straight 文件：380.7 Kbytes Page：2 Pages | SCHURTERSchurter Inc. 硕特硕特集团 |  | | |
LowPhaseNoiseVCXOwithmultipliers(for100-200MHzFundXtal) 文件：93.36 Kbytes Page：8 Pages | ABRACONAbracon Corporation 阿布雷肯 |  | | |
LowPhaseNoiseVCXOwithmultipliers(for100-200MHzFundXtal) 文件：93.36 Kbytes Page：8 Pages | ABRACONAbracon Corporation 阿布雷肯 | | | |
LowPhaseNoiseVCXOwithmultipliers(for100-200MHzFundXtal) 文件：93.36 Kbytes Page：8 Pages | ABRACONAbracon Corporation 阿布雷肯 | | |
HAF2007产品属性
- 类型
描述
- 型号
HAF2007
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel MOS FET Series Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
23+ |
TO-252 |
13412 |
原厂原装正品 |
|||
RENESAS |
2020+ |
TO-252 |
14955 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
RENESAS |
2016+ |
TO-252 |
6523 |
房间原装进口现货假一赔十 |
|||
R |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
RENESAS |
360000 |
原厂原装 |
1305 |
||||
RENESAS/瑞萨 |
23+ |
NA/ |
10912 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HITACHI |
22+ |
TO252 |
6980 |
原装现货,可开13%税票 |
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2013-1-28
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