N-CHANNELENHANCEMENTMODETRANSISTOR

Description TheH2N7000isdesignedforhighvoltage,highspeedapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription Theseproductshavebeendesignedtominimizeon-stateresistanceWhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,and

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

CASE29-04,STYLE22TO-92(TO-226AA)

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

N-CHANNEL-ENHANCEMENT

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