PHOTOTRANSISTOROPTICALINTERRUPTERSWITCH

DESCRIPTION TheH21A1,H21A2andH21A3consistofagalliumarsenideinfraredemittingdiodecoupledwithasiliconphototransistorinaplastichousing.Thepackagingsystemisdesignedtooptimizethemechanicalresolution,couplingefficiency,ambientlightrejection,costandreliability.T

1mmAPERTUREOPTO-ELECTRONICSINGLECHANNELSLOTTEDINTERRUPTERSWITCHESWITHTRANSISTORSENSORS

DESCRIPTION TheH21A_andH22A_seriesofopaquephotointerruptersaresinglechannelswitchesconsistingofaGalliumArsenideinfraredemittingdiodeandaNPNsiliconphototransistormountedinapolycarbonatehousing.The packageisdesignedtooptimisethemechanicalresolution,couplinge

封装/外壳：开槽，PC 引脚 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PC PIN 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

封装/外壳：开槽，PC 引脚 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PC PIN 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

SLOTTEDOPTICALSWITCH

文件：307.53 Kbytes Page：4 Pages

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,20A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=70mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandlingcapability. ■TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,20A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=70mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandlingcapability. ■TO-220&TO-263package.

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT20Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

OUTDOORLAMPCLUSTER

文件：319.03 Kbytes Page：3 Pages

20KBSOUNDCONTROLLER

文件：290.78 Kbytes Page：14 Pages