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位置：首页 > IC中文资料第322页 > H11D1

H11D1价格

参考价格：￥1.6266

型号：H11D1 品牌：VISHAY 备注：这里有H11D1多少钱，2024年最近7天走势，今日出价，今日竞价，H11D1批发/采购报价，H11D1行情走势销售排行榜，H11D1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
H11D1

6-PinDIPOptoisolatorsHighVoltageTransistorOutput(300Volts)

TheH11D1andH11D2consistofgalliumarsenideinfraredemittingdiodesopticallycoupledtohighvoltage,silicon,phototransistordetectorsinastandard6–pinDIPpackage.Theyaredesignedforhighvoltageapplicationsandareparticularlyusefulincopymachinesandsolidstaterelays.

MotorolaMotorola, Inc

摩托罗拉

Motorola
H11D1

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1

HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT

DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart

ISOCOM

Isocom Components 2004 LTD

ISOCOM
H11D1

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup

VishayVishay Siliconix

威世科技

Vishay
H11D1

PropertyofLite-OnOnly

FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype

LITEONLiteon Semiconductor Corporation

敦南科技股份

LITEON
H11D1

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS •

VishayVishay Siliconix

威世科技

Vishay
H11D1

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage

文件：120.43 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
H11D1.300

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1_V02

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup

VishayVishay Siliconix

威世科技

Vishay
H11D1300

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1300W

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D13S

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D13SD

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1M

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
H11D1M

PropertyofLite-OnOnly

FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype

LITEONLiteon Semiconductor Corporation

敦南科技股份

LITEON
H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1M/2M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1S

PropertyofLite-OnOnly

FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype

LITEONLiteon Semiconductor Corporation

敦南科技股份

LITEON
H11D1S

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1SD

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1SM

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1SM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
H11D1SR2M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1SR2M

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
H11D1SR2VM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
H11D1SR2VM

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1S-TA1

PropertyofLite-OnOnly

FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype

LITEONLiteon Semiconductor Corporation

敦南科技股份

LITEON
H11D1SVM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
H11D1TVM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
H11D1VM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
H11D1W

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
H11D1X

HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT

DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart

ISOCOM

Isocom Components 2004 LTD

ISOCOM
H11D1-X007T

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS •

VishayVishay Siliconix

威世科技

Vishay
H11D1-X007T

Optocoupler,PhototransistorOutput,withBaseConnection,HighBVVoltage

DESCRIPTION TheH11D1,H11D2,H11D3,H11D4areoptocouplerswithveryhighBVCER.TheyareintendedfortelecommunicationsapplicationsoranyDCapplicationrequiringahighblockingvoltage. TheH11D1,H11D2areidenticalandtheH11D3,H11D4areidentical. FEATURES •CTRatIF=1

VishayVishay Siliconix

威世科技

Vishay
H11D1-X009T

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS •

VishayVishay Siliconix

威世科技

Vishay
H11D1-X017T

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS •

VishayVishay Siliconix

威世科技

Vishay
H11D1_07

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage

文件：120.43 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
H11D1-X007

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage

文件：120.43 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
H11D1-X009

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage

文件：120.43 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
EP11D1ABE

SealedTinyPushbuttonSwitches

文件：439.76 Kbytes Page：6 Pages

CK-COMPONENTS

C&K Components

CK-COMPONENTS

H11D1产品属性

  • 类型

    描述

  • 型号

    H11D1

  • 功能描述

    晶体管输出光电耦合器 HV Phototransistor

  • RoHS

    否

  • 制造商

    Vishay Semiconductors

  • 输入类型

    DC

  • 最大集电极/发射极电压

    70 V

  • 最大集电极/发射极饱和电压

    0.4 V

  • 绝缘电压

    5300 Vrms

  • 电流传递比

    100 % to 200 %

  • 最大正向二极管电压

    1.65 V

  • 最大输入二极管电流

    60 mA

  • 最大集电极电流

    100 mA

  • 最大功率耗散

    100 mW

  • 最大工作温度

    + 110 C

  • 最小工作温度

    - 55 C

  • 封装/箱体

    DIP-4

  • 封装

    Bulk

H11D1供应商更多...

更新时间：2024-4-25 23:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市益百分电子有限公司
H11D1
INFINEON
99+/94
DIP6
3300
全新原装进口自己库存优势
询价
深圳市杰顺创科技有限公司
H11D1-X009T
VISHAY/威世
21+
SOP6
5000
全新原装现货 价格优势
询价
上海意淼电子科技有限公司
H11D13S
FSC SMD
23+
NA
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
H11D1SR2M
FSC
2019+
SOP-6
6000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市科创腾达科技有限公司
H11D1
21+
NA
99999
原装正品价格优惠
询价
深圳市金芯世纪电子有限公司
H11D1M
OCIC/卓睿科
22+
DIP-6
100000
代理渠道/只做原装/可含税
询价
深圳市星辰微电科技有限公司
H11D1M
FAIRCHILD/仙童
20+
DIP-6
5150
仓库深圳,原装现货
询价
深圳市弘扬芯城科技有限公司
H11D1
VISHAY(威世)
23+
DIP6
6000
询价
深圳市恒达亿科技有限公司
H11D1FR2
QTC
23+
SOIC-6
3200
全新原装、诚信经营、公司现货销售
询价
深圳市凌旭科技有限公司
H11D1SR2M
FAIRCHILD
2016+
SOP-6
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价

H11D1芯片相关品牌

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  • BOTHHAND
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  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

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