位置：首页 > IC中文资料第9645页 > H03N60F
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H03N60F | N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel650V(D-S)MOSFET 文件：2.52205 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage 文件：1.72801 Mbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
PowerMOSFET 文件：193.74 Kbytes Page：3 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
N-CHANNELSILICONPOWERMOSFETFeatures 文件：580.87 Kbytes Page：5 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | |
H03N60F产品属性
- 类型
描述
- 型号
H03N60F
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
H |
23+ |
TO-220F |
6000 |
原装正品，支持实单 |
|||
AEI |
22+ |
NA |
6878 |
加我QQ或微信咨询更多详细信息, |
|||
PHYCOM |
SMD |
68900 |
原包原标签100%进口原装常备现货! |
||||
SA |
23+ |
65480 |
|||||
ROHM |
17+ |
SOT-23 |
6200 |
100%原装正品现货 |
|||
JST/日压 |
22+ |
连接器 |
728922 |
代理-优势-原装-正品-现货*期货 |
|||
H |
23+ |
TO-TO-220F |
12300 |
全新原装真实库存含13点增值税票! |
|||
ROHM |
16+ |
SOT-23 |
10000 |
进口原装现货/价格优势! |
|||
H |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
|||
23+ |
7300 |
专注配单,只做原装进口现货 |
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