位置：首页 > IC中文资料第6917页 > H02N60I
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H02N60I | N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 |  |   |
N-Channel650V(D-S)MOSFET 文件：1.70191 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel650V(D-S)MOSFET 文件：1.70195 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.70167 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.70169 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
NCHANNELENHANCEMENTMODE 文件：701.78 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
H02N60I产品属性
- 类型
描述
- 型号
H02N60I
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
华昕 |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HSMC |
23+ |
NA |
116 |
专做原装正品,假一罚百! |
|||
H |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
HUAJING |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
H |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
|||
HSMC |
07+ |
TO252 |
239 |
全新原装 实单必成 |
|||
H |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
|||
H |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
|||
HSMC |
22+ |
TO-252 |
360000 |
进口原装自己库存实库实数 |
|||
HSMC |
07+ |
TO252 |
139 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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DdatasheetPDF页码索引
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