位置：首页 > IC中文资料第5466页 > H01N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H01N60 | N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 |  |   |
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | | | |
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | | | |
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | | | |
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | | | |
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | | | |
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheTO-252packageisuniversallypreferredforallcommercialindustrialsurfacemountapplicationsandsuitedforAC/DCconverters.Thethrough-holeversion(AP01N60J)isavailableforlow-profileapplications. Dynamicdv/dtRating RepetitiveAvalancheRated FastSw | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 |  | | |
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheTO-252packageisuniversallypreferredforallcommercialindustrialsurfacemountapplicationsandsuitedforAC/DCconverters.Thethrough-holeversion(AP01N60J)isavailableforlow-profileapplications. Dynamicdv/dtRating RepetitiveAvalancheRated FastSw | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.08589 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-CHANNELENHANCEMENTMODEPOWERMOSFET 文件：103.96 Kbytes Page：4 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.08593 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
H01N60产品属性
- 类型
描述
- 型号
H01N60
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MORNSUN/金升阳 |
23+ |
DIP |
5200 |
金升阳一级代理只做原装假一罚千价格优势 |
|||
MOT |
20+/21+ |
DIP |
5855 |
全新原装进口价格优势 |
|||
华昕 |
09+ |
TO-92 |
880000 |
明嘉莱只做原装正品现货 |
|||
HSMC |
1822+ |
TO-251 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MOT |
23+ |
DIP |
6000 |
原装正品假一罚百!可开增票! |
|||
AP |
23+ |
TO-263 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
23+ |
N/A |
12550 |
正品授权货源可靠 |
||||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
|||
HSMC |
21+ROHS |
SOT-252 |
55000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HSMC |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
H01N60芯片相关品牌
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