位置：首页 > IC中文资料第705页 > GAL16V8D-25
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 |  |   | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
封装/外壳：20-LCC（J 形引线） 包装：管件 描述：IC CPLD 8MC 25NS 20PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
封装/外壳：20-LCC（J 形引线） 包装：管件 描述：IC CPLD 8MC 25NS 20PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | |
GAL16V8D-25产品属性
- 类型
描述
- 型号
GAL16V8D-25
- 功能描述
SPLD - 简单可编程逻辑器件 5V 16 I/O
- RoHS
否
- 制造商
Texas Instruments
- 逻辑系列
TICPAL22V10Z
- 大电池数量
10
- 最大工作频率
66 MHz
- 延迟时间
25 ns
- 工作电源电压
4.75 V to 5.25 V
- 电源电流
100 uA
- 最大工作温度
+ 75 C
- 最小工作温度
0 C
- 安装风格
Through Hole
- 封装/箱体
DIP-24
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Lattice(莱迪斯) |
22+ |
特价 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Lattice |
2015+ |
SMD/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
LATTICE原现 |
19+ |
DIP-20 |
72223 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
Lattice |
22+ |
DIP |
10000 |
只做原装，可配单 |
|||
LATTICE/莱迪斯 |
23+ |
DIP20 |
12500 |
代理授权直销,原装现货,假一罚十,长期稳定供应,特 |
|||
LATTICE原现 |
2138+ |
DIP-20 |
6900 |
||||
LATTICE |
2020+ |
DIP20 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
LATTICE |
05+ |
原厂原装 |
11492 |
只做全新原装真实现货供应 |
|||
LATTICE |
1635+ |
DIP20 |
6000 |
好渠道!好价格!一片起卖! |
|||
LATTICE/莱迪斯 |
2022 |
DIP |
80000 |
原装现货,OEM渠道,欢迎咨询 |
GAL16V8D-25芯片相关品牌
GAL16V8D-25规格书下载地址
GAL16V8D-25参数引脚图相关
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI连接器
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- GALI-39
- GALI-33
- GALI-3
- GALI-29
- GALI-24
- GALI-21
- GALI-2
- GALI-19
- GALI-1
- GALI_59
- GALI_49
- GALI_39
- GALI_29
- GALI_19
- GAL6002
- GAL6001
- GAL504P
- GAL504N
- GAL20V8
- GAL1883
- GAL16V8D-25QP
- GAL16V8D-25QJSB338
- GAL16V8D-25QJNI
- GAL16V8D-25QJN
- GAL16V8D-25QJI
- GAL16V8D25QJI
- GAL16V8D-25QJ
- GAL16V8D-25LS
- GAL16V8D-25LPNI
- GAL16V8D-25LPN
- GAL16V8D25LPN
- GAL16V8D-25LPI
- GAL16V8D-25LP
- GAL16V8D25LP
- GAL16V8D-25LJNI
- GAL16V8D-25LJN
- GAL16V8D25LJN
- GAL16V8D-25LJI
- GAL16V8D-25LJ
- GAL16V8D25LJ
- GAL16V8D-20QPNI
- GAL16V8D-20QPI
- GAL16V8D-20QJNI
- GAL16V8D-20QJI
- GAL16V8D-15QPN
- GAL16V8D-15QP
- GAL16V8D-15QJN
- GAL16V8D-15QJ
- GAL16V8D-15LS
- GAL16V8D-15LPNI
- GAL16V8D-15LPN
- GAL16V8D15LPN
- GAL16V8D-15LPI
- GAL16V8D-15LP
- GAL16V8D15LP
- GAL16V8D-15LJNI
- GAL16V8D-15LJN
- GAL16V8D-15LJI
- GAL16V8D-15LJ
- GAL16V8D15LJ
- GAL16V8
- GAH504P
- GAH504N
- GAH404
- GAH403
- GAH402
- GAH401
- GAH304
- GAH303
- GAH302
- GAH301
- GAG01Z
- GAG01Y
- GAG01A
- GAG01
- GABJ506
- GABJ504
- GABJ503
- GABJ502
- GABJ501
GAL16V8D-25数据表相关新闻
GAL16V8D-25LPN
GAL16V8D-25LPN,全新.当天发货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-4-13GAL16V8D-15LJN
搜索： SMD/SMTSPLD-简单可编程逻辑器件,TSSOP-20SPLD-简单可编程逻辑器件,TSSOP-20SPLD-简单可编程逻辑器件,STQFN-12SPLD-简单可编程逻辑器件
2020-7-13GAL16V8D-20LD/883产品技术参数
GAL16V8D-20LD/883产品技术参数
2020-7-10GAL16V8D-25LPNI
GAL16V8D-25LPNI
2019-12-20GAL16V8D-15LPN，集成电路（IC）
全新原装，公司现货销售
2019-8-21GAL16V8D-25LPN公司原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-16
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