| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A) Benefits •Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features •UltraFast:Optimizedforhighoperating frequencies8-40kHz | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A) Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A) StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
InsulatedGateBipolarTransistor 文件：395.49 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
InsulatedGateBipolarTransistor 文件：1.2552 Mbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-3P |
18000 |
||||
IR |
TO-3P |
68900 |
原包原标签100%进口原装常备现货! |
||||
IR |
21+ |
TO247 |
12588 |
原装正品,自己库存 假一罚十 |
|||
IR |
23+ |
TO-247 |
3000 |
原装正品假一罚百!可开增票! |
|||
IR |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IR |
18+ |
TO247 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
IR |
19+ |
TO-247 |
72101 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IR(国际整流器) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
23+ |
TO-3P |
65480 |
G4PC40UD芯片相关品牌
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