HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–100V •rDS(ON)(MAX)................................................0.26Ω •ID....................................................................–20A •IntegratedFastRecoveryDiod

PchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–100V •rDS(ON)(MAX)................................................0.26Ω •ID....................................................................–20A •IntegratedFastRecoveryDiod

High-SpeedSwitchingUsePchPowerMOSFET

Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):0.26Ω •ID:–20A •IntegratedFastRecoveryDiode(TYP.):100ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

IscP-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement

High-SpeedSwitchingUsePchPowerMOSFET

Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):0.26Ω •ID:–20A •IntegratedFastRecoveryDiode(TYP.):100ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.