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FQU2N60C价格
参考价格：￥1.8191
型号：FQU2N60CTU 品牌：Fairchild 备注：这里有FQU2N60C多少钱，2024年最近7天走势，今日出价，今日竞价，FQU2N60C批发/采购报价，FQU2N60C行情走势销售排行榜，FQU2N60C报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU2N60C | 600VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQU2N60C | N-ChannelQFET짰MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQU2N60C | N-ChannelQFETMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,an | KERSEMI Kersemi Electronic Co., Ltd. |  | |
FQU2N60C | N-ChannelQFET짰MOSFET600V,1.9A,4.7廓 Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
FQU2N60C | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
FQU2N60C | 600VN-ChannelMOSFET 文件：863.86 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQU2N60C | 600VN-ChannelMOSFET 文件：863.86 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
LowGateCharge(Typ.8.5nC) Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelQFET짰MOSFET600V,1.9A,4.7廓 Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | | |
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | | |
2A600VN-channelEnhancementModePowerMOSFET 文件：1.34834 Mbytes Page：13 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | |
FQU2N60C产品属性
- 类型
描述
- 型号
FQU2N60C
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHI |
2020+ |
TO-251 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
onsemi |
23+ |
I-PAK |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
FSC |
14+ |
TO-251 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
21+ |
TO-251-3 |
8800 |
公司只做原装正品 |
|||
FSC |
23+ |
TO251 |
2720 |
原厂原装正品 |
|||
FSC |
17+ |
TO-251 |
551 |
全新原装环保现货 |
|||
ON/安森美 |
22+ |
TO-251-3 |
6000 |
只做原装,假一赔十 |
|||
FAIRCHILD/仙童 |
21+ |
TO251 |
1709 |
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FQU2N60C数据表相关新闻
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2020-12-31
DdatasheetPDF页码索引
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