位置：首页 > IC中文资料第911页 > FQP10N60C
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP10N60C | 600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtomini-mizeon-stateresistance,providesuperiorswitchingperfor-mance,andwithstandhighenergypul | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQP10N60C | 600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformanc | KERSEMI Kersemi Electronic Co., Ltd. |  | |
FQP10N60C | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.73Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
FQP10N60C | 600VN-ChannelMOSFET 文件：1.02071 Mbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQP10N60C | 600VN-ChannelMOSFET 文件：1.19884 Mbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600VN-ChannelMOSFET 文件：1.02071 Mbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
10Amps,600/650VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.33382 Mbytes Page：11 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
10A600VN-channelEnhancementModePowerMOSFET 文件：976.2 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | | |
10Amps,600/650VoltsN-CHANNELPOWERMOSFET 文件：330.13 Kbytes Page：8 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
FQP10N60C产品属性
- 类型
描述
- 型号
FQP10N60C
- 功能描述
MOSFET 600V N-Ch Q-FET advance C-Series
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD |
22+ |
TO220 |
6980 |
原装现货,可开13%税票 |
|||
onsemi(安森美) |
23+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD |
23+ |
TO-220 |
5500 |
现货,全新原装 |
|||
FAIRCHILD |
10+ |
TO-220 |
154 |
进口原装假一赔十 |
|||
FAIRCHI |
16+ |
TO-220 |
8343 |
原装现货价格绝对优势Y |
|||
ON |
TO-220 |
35500 |
一级代理 原装正品假一罚十 价格优势 实单带接受价 |
||||
FAIRCHILD |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
21+ |
TO-220 |
6000 |
原装正品 |
|||
FSC/Toohong |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
FQP10N60C芯片相关品牌
FQP10N60C规格书下载地址
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