P-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–20V,–2.4A.Rds(on)=0.055Ω@

P-ChannelEnhancement-ModeMOSFETs

ProductSummary Vps=-20V,Ip=-3A Rosion)

P-Channel2.5V(D-S)MOSFET

Features •–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=80mΩ@VGS=–2.5V •Fastswitchingspeed •Highperformancetrenchtechnologyforextremely lowRDS(ON) •SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23inthesame footprint

ContainsallsupportcircuitryneededfortheADS1148/ADS1248

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ContainsallsupportcircuitryneededfortheADS1146/ADS1246

文件：2.33022 Mbytes Page：27 Pages

P-Channel20-V(D-S)MOSFET

文件：1.04078 Mbytes Page：9 Pages

SocketterminalstripScrewconnection

Thesocketterminalstrip302isoneofoursmallestsocketterminalstrips.Itis availablein8mmpitchwith1-to12-poledesignandcanbeeasilycuttothe desirednumberofpoles. Theflexiblepolyamidemouldingcanevenbemountedoncurvedsurfaces. Thewireprotectorofthe“HDS”-ver

2(50.8mm)SingleTurnWirewoundPrecisionPotentiometer

FEATURES •Screw,servoandbushingmounttypes available •Largerangeofohmicvalues:5to85k •Extratapsuponrequest •Gangableupto6sectionsonasameshaft •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

SCREWTYPESERIES

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IndicatesPhasePresence

文件：98.77 Kbytes Page：1 Pages

Extratapsuponrequest

文件：101.35 Kbytes Page：4 Pages