型号 功能描述 生产厂家&企业 LOGO 操作
F2001

PATENTEDGOLDMETALIZEDSILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeaturesgoldmetalforgreatlyextendedlifetim

Polyfet

POLYFET

Polyfet

LowCost,Compact20W,2:1InputRangeDC/DCConverters

KeyFeatures: •20WOutputPower •2:1InputVoltageRange •1,500VDCIsolation •Single&DualOutputs •Efficiencyto86 •Compact1.6x2In.Case •-40°Cto+71°COperation •IndustryStandardPin-Out •LowestCost!!

MPD

MPD (Memory Protection Devices)

MPD

F2000ERWSERIES

文件:217.73 Kbytes Page:2 Pages

MPD

MPD (Memory Protection Devices)

MPD

USPowerSupplyCordwithIECConnectorC13,V-Lock,straight

Description -PowerCord,ProtectionclassI,Pintemperature70°C, -withV-Lockinterlockingsystem

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

1.0Watt-28Volts,ClassCMicrowave2000MHz

GENERALDESCRIPTION The2001isaCOMMONBASEtransistorcapableofproviding1WattsClassC,RFoutputpowerat2000MHz.GoldMetalizationanddiffusedballastingareusedtoprovidehighreliabilityandsupremeruggedness.ThetransistorusesafullyhermeticHighTemperatureSolderSealedpa

GHZTECHGHz Technology

GHz Technology

GHZTECH

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingDiffusedCollectortechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWSERIES,ENHANCEDPERFORMANCE ■FULLYINSULATEDPACKAGE(U.L.COMPLIANT)FOREASYMOUNTING ■HIGHVOLTAGECAP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HighVoltageHighCurrentDarlingtonArrays

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS Ideallysuitedforinterfacingbetweenlow-levellogiccircuitryandmultipleperipheralpowerloads,theSeriesULN20xxA/Lhigh-voltage,high-currentDarlingtonarraysfeaturecontinuousloadcurrentratingsto500mAforeachofthesevendrivers.At

Allegro

Allegro MicroSystems

Allegro

7½-DigitHighPerformanceMultimeter8½-DigitHighPerformanceMultimeter

文件:402.77 Kbytes Page:6 Pages

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

TEKTRONIX

F2001产品属性

  • 类型

    描述

  • 型号

    F2001

  • 制造商

    POLYFET

  • 制造商全称

    Polyfet RF Devices

  • 功能描述

    PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

更新时间:2024-4-24 8:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
POLYFET
23+
TO-63S
254
现货供应
MPD
2022+
DIP
39639
全新原装正品
POLYFET
23+
TO-63S
90000
一级代理商进口原装现货、价格合理
B
23+
DIP6
11500
原装现货,价格优势
B
2016+
DIP6
6523
只做原装正品现货!或订货!
MPD
22+
SIP
90000
百分百原装正品 价格优势
POLYFET
2017+
RF
21458
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
MPD
2021+
DIP
11000
十年专营原装现货,假一赔十
POLYFET
23+
TO-63S
1050
专营高频管模块,全新原装!
POLYFET
N/A
12

F2001芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
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  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

F2001数据表相关新闻

  • F280021PTSR

    F280021PTSR

    2023-4-7
  • F280025CPNSR

    F280025CPNSR

    2021-8-5
  • F280023PTSR

    32-位微控制器-MCUC200032-bitMCUwith100MHz,FPU,TMU,64-KBflash

    2021-4-1
  • F1C500

    F1C500,当天发货0755-82732291全新原装现货或门市自取.

    2020-11-16
  • F1C600

    F1C600,当天发货0755-82732291全新原装现货或门市自取.

    2020-11-16
  • F1E200

    QFP-128

    2020-10-28