位置:DS1249W-100-IND > DS1249W-100-IND详情

DS1249W-100-IND中文资料

厂家型号

DS1249W-100-IND

文件大小

157.47Kbytes

页面数量

8

功能描述

3.3V 2048kb Nonvolatile SRAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

DALLAS

DS1249W-100-IND数据手册规格书PDF详情

DESCRIPTION

The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed, and no additional support circuitry is required for microprocessor interfacing.

FEATURES

◾ 10 years minimum data retention in the absence of external power

◾ Data is automatically protected during power loss

◾ Unlimited write cycles

◾ Low-power CMOS operation

◾ Read and write access times as fast as 100ns

◾ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time

◾ Optional industrial (IND) temperature range of -40°C to +85°C

◾ JEDEC standard 32-pin DIP package

DS1249W-100-IND产品属性

  • 类型

    描述

  • 型号

    DS1249W-100-IND

  • 制造商

    DALLAS

  • 制造商全称

    Dallas Semiconductor

  • 功能描述

    3.3V 2048kb Nonvolatile SRAM

更新时间:2025-12-16 9:20:00
供应商 型号 品牌 批号 封装 库存 备注 价格
DALLAS
23+
MOD
65480
DALLAS
2526+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
DALLAS
25+
DIP
996880
只做原装,欢迎来电资询
DALLAS
24+
DIP
13718
只做原装 公司现货库存
DALLAS
24+
DIP
12000
原装正品 有挂就有货
DALLAS
23+
DIP
98900
原厂原装正品现货!!
DALLAS
24+
DIP-32
1400
DALLAS
1824+
DIP32
2000
原装现货专业代理,可以代拷程序
DALLAS
20+
原装
67500
原装优势主营型号-可开原型号增税票
DALLAS
0038+
模块
77
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