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CY7C136价格
参考价格：￥118.1457
型号：CY7C1360A-150BGC 品牌：Cynergy 3 备注：这里有CY7C136多少钱，2024年最近7天走势，今日出价，今日竞价，CY7C136批发/采购报价，CY7C136行情走势销售排行榜，CY7C136报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CY7C136 | 2Kx8Dual-PortStaticRAM FunctionalDescription TheCY7C132,CY7C136,CY7C136A,CY7C142,andCY7C146arehighspeedCMOS2Kx8dual-portstaticRAMs.Twoportsareprovidedtopermitindependentaccesstoanylocationinmemory.TheCY7C132,CY7C136,andCY7C136Acanbeusedaseitherastandalone8-bitdual-portstatic | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |  |   |
CY7C136 | 2Kx8Dual-PortStaticRAM FunctionalDescription TheCY7C132,CY7C136,CY7C136A,CY7C142,andCY7C146arehighspeedCMOS2Kx8dual-portstaticRAMs.Twoportsareprovidedtopermitindependentaccesstoanylocationinmemory.TheCY7C132,CY7C136,andCY7C136Acanbeusedaseitherastandalone8-bitdual-portstatic | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C136 | 2Kx8Dual-PortStaticRAM FunctionalDescription TheCY7C132,CY7C136,CY7C136A,CY7C142,andCY7C146arehighspeedCMOS2Kx8dual-portstaticRAMs.Twoportsareprovidedtopermitindependentaccesstoanylocationinmemory.TheCY7C132,CY7C136,andCY7C136Acanbeusedaseitherastandalone8-bitdual-portstatic | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C136 | 2Kx8Dual-PortStaticRAMHighspeedaccess:15ns 文件：443.27 Kbytes Page：15 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C136 | 2Kx8Dual-PortStaticRAM 文件：562.22 Kbytes Page：18 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C136产品属性
- 类型
描述
- 型号
CY7C136
- 制造商
Cypress Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS/赛普拉斯 |
23+ |
QFP52 |
10 |
||||
Cypress |
21+ |
52PQFP |
13880 |
公司只售原装,支持实单 |
|||
CYPRESS/赛普拉斯 |
1803+ |
QFP |
5316 |
向鸿原装现货库存,代理渠道可原厂发货-优势 |
|||
CYPRESS |
23+ |
TQFP100 |
6000 |
原装正品，支持实单 |
|||
CYPRESS |
21+ |
QFP |
2460 |
原装现货热卖 |
|||
CYPRESS/赛普拉斯 |
23+ |
QFP |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
CYPRESS |
PLCC-52 |
6000 |
原装现货,长期供应,终端可账期 |
||||
CYPRESS |
2138+ |
QFP |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
CYPRESS |
22+ |
DIP48 |
2200 |
绝对原装!真实库存! |
|||
23+ |
N/A |
90150 |
正品授权货源可靠 |
CY7C136芯片相关品牌
CY7C136规格书下载地址
CY7C136参数引脚图相关
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- CY7C1363D-133AXI
- CY7C1363C-133AXC
- CY7C1363C-133AJXC
- CY7C1362C-166AJXC
- CY7C1361C-133AXI
- CY7C1361C-133AXC
- CY7C1361C-133AJXC
- CY7C1361C-100BGC
- CY7C1361C-100AXE
- CY7C1361C-100AXC
- CY7C1360S-200AXI
- CY7C1360S-166BZXI
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- CY7C1360C-200AJXC
- CY7C1360C-166BZC
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- CY7C1360A-150BGC
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- CY7C1356CV25-166AXC
- CY7C1356C-250AXC
- CY7C1356C-166AXI
- CY7C1356C-166AXC
- CY7C1355C-133AXC
- CY7C1355B-100AC
- CY7C1354CV25-200AXC
- CY7C1354CV25-166BZC
- CY7C1354CV25-166AXC
- CY7C1354C-200AXI
- CY7C1354C-200AXC
- CY7C1354C-166AXI
- CY7C1354C-166AXC
- CY7C1353S-100AXC
- CY7C1353G-100AXC
- CY7C1352S-133AXC
- CY7C1352G-133AXC
- CY7C135
- CY7C133
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- CY7C131
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CY7C136数据表相关新闻
CY7C1329H-133AXC
CY7C1329H-133AXC
2023-8-7CY7C1399B-12ZC 十年IC，一家专业军工级IC供货商
CY7C1399B-12ZCCY7C1399B-12ZC，ALTERA（阿尔特拉），军工级IC专业优势渠道
2020-7-16CY7C1399B-12ZC十年IC，一家专业军工级IC供货商
CY7C1399B-12ZC十年IC，一家专业军工级IC供货商
2020-7-15CY7C1370D-167AXI产品资料 CYPRESS/赛普拉斯
CY7C1370D-167AXI产品资料
2020-6-28CY7C1350G-133AXC公司原装现货/长期供应
全新原装
2019-3-30CY7C1354C-166AXI公司原装现货/长期供应
全新原装
2019-3-30
DdatasheetPDF页码索引
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