您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第610页 > BSS138

BSS138价格

参考价格：￥0.1137

型号：BSS138 品牌：Fairchild 备注：这里有BSS138多少钱，2024年最近7天走势，今日出价，今日竞价，BSS138批发/采购报价，BSS138行情走势销售排行榜，BSS138报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BSS138

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARTMARKINGDETAIL–SS

Zetex

Zetex Semiconductors

Zetex
BSS138

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

SIEMENS

Siemens Ltd

SIEMENS
BSS138

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:3.5Ω *LowInputCapacitance:40PF *LowOutputCapacitance:12PF *LowThreshole:1.5V *FastSwitchingSpeed:20ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

WEITRONWEITRON

威堂電子科技

WEITRON
BSS138

DirectLogic-LevelInterface:TTL/CMOS

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

SILIKRONSilikron Semiconductor Co.,LTD.

Silikron Semiconductor Co.,LTD.

SILIKRON
BSS138

N-CHANNELLOGICLEVELENHANCEMENTMODE

■DESCRIPTION ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. ■FEATURES

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BSS138

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
BSS138

50VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •RDS(ON),VGS@2.5V,IDS@100mA=6Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystem

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BSS138

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BSS138

N-ChannelEnhancementModeFieldEffectTransistor

Features •50V,0.22A, RDS(ON)=3.5Ω@VGS=10V RDS(ON)=6.0Ω@VGS=4.5V •HighdensitycelldesignforlowRDS(ON). •RuggedandReliable. •SOT-23package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
BSS138

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheBSS138Qissuitableforautomotive

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138

N-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:SS •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BSS138

N-ChannelMOS

GENERALFEATURES ●VDS=50V,ID=0.22A ●RDS(ON)

E-CMOS

飞虹积体

E-CMOS
BSS138

N-Channel50-V(D-S)MOSFET

N-Channel50-V(D-S)MOSFET FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateR

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BSS138

50VN-ChannelMOSFET

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

Good-Ark

Good-Ark

Good-Ark
BSS138

DirectLogic-LevelInterface:TTL/CMOS

FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display,Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
BSS138

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features LowRDS(on),ruggedandreliable,compactindustrystandardSOT-23surfacemountpackage. Applications Lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplicatio

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BSS138

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
BSS138

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS50V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
BSS138

SOT-23Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible Applications ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
BSS138

N-ChannelMOSFET

■Features ●VDS(V)=50V ●ID=200mA(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BSS138

N-ChannelEnhancementModeMOSFET

Features •50V/0.2A, RDS(ON)=3.5Ω@VGS=5V.Id=0.2A RDS(ON)=10Ω@VGS=2.75V.Id=0.2A •SuperHighdensecelldesignforextremelylowRDS(ON) •ReliableandRugged. •LowThresholdVoltage(0.5V-1.5V)MakeitIdealforLowVoltageApplications. •SOT-23forSurface

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BSS138

Plastic-EncapsulateMosfets

N-ChannelMOSFET FEATURES •HighdensitycelldesignforextremelylowRDS(ON) •RuggedandReliable •CompactindustrystandardSOT-23surfacemountpackage

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
BSS138

N-CHANNELENHANCEMENTMODEMOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138

N-ChannelEnhancementModeMOSFET

Feature ●50V/0.2A, RDS(ON)=3.5Ω(MAX)@VGS=5V.Id=0.2A RDS(ON)=10Ω(MAX)@VGS=2.75V.Id=0.2A ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●LowThresholdVoltage(0.5V—1.5V)MakeitIdealforLowVoltageApplications. ●SOT-23forSurf

ZPSEMI

ZP Semiconductor

ZPSEMI
BSS138

N-Channel50-V(D-S)MOSFET

N-Channel50-V(D-S)MOSFET FEATURE ●LowOn-Resistance ●LowGateThresholdVoltage ●FastSwitchingSpeed ●LowInput/OutputLeakage

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI
BSS138

N-Channel30-V(D-S)MOSFET

zFeatures 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy. 5)ESDprotected2KVHBM zApplications Interfacing,switching(50V,100mA)

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TUOFENG
BSS138

SOT-23Plastic-EncapsulateMOSFETS

Features HighdensitycelldesignforextremelylowRpson) RuggedandRelaible

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSS138

N-ChannelMOSFET

Features ●VDS(V)=50V ●ID=300mA(VGS=10V) ●RDS(ON)

UMWUMW

友台友台半导体

UMW
BSS138

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

文件：198.44 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BSS138

NChannelEnhancementModeMOSFET

文件：1.65045 Mbytes Page：10 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER
BSS138

Plastic-EnhancementModePowerMOSFET

文件：1.00653 Mbytes Page：3 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
BSS138

包装：管件 描述：N-CHANNEL ENHANCEMENT MODE MOSFE 分立半导体产品 晶体管 - FET，MOSFET - 单个

ITEITE Tech. Inc.

聯陽半導體

ITE
BSS138

N-CHANNELLOGICLEVELENHANCEMENTMODE

文件：160.95 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BSS138

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：485.65 Kbytes Page：5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138_08

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138_17

N-CHANNELENHANCEMENTMODEMOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138_NL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BSS138-13-F

N-CHANNELENHANCEMENTMODEMOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138-7

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheBSS138Qissuitableforautomotive

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138-7-F

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138-7-F

N-CHANNELENHANCEMENTMODEMOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138BK

60V,360mAN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. Featuresandbenefits -Logic-levelcompatible -Veryfastswitching -TrenchMOSFETtechn

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BSS138BK

60V,360mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ES

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSS138BK

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSS138BKS

60V,320mAdualN-channelTrenchMOSFET

1.1Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSS138BKW

60V,320mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSS138BKW

nullN-ChannelEnhancementModeMOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSS138BKW

60V,320mAN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotection

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSS138-CAR

Plastic-EncapsulateMOSFETS

APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible -CARforautomotiveandother

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
BSS138DW

DualN-ChannelMOSFET

Feature HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible Application DirectLogic-LevelInterface:TTL/CMOS BatteryOperatedSystems Solid-StateRelays

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
BSS138DW

DualN-Channel60V(D-S)MOSFET

•LowOn-Resistance:1.5 FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138DW

DualN-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowOn-Resistance:2.5Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •AvailableinLeadFree/RoHSCompliantVersion(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes5and6)

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DW_09

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •AvailableinLeadFree/RoHSCompliantVersion(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes5and6)

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DW_V01

DualN-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowOn-Resistance:2.5Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BSS138DW-7-F

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •AvailableinLeadFree/RoHSCompliantVersion(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes5and6)

DIODESDiodes Incorporated

达尔科技

DIODES
BSS138DWK

50VN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODESDiodes Incorporated

达尔科技

DIODES

BSS138产品属性

  • 类型

    描述

  • 型号

    BSS138

  • 功能描述

    MOSFET SOT-23 N-CH LOGIC

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

BSS138供应商更多...

更新时间：2024-4-25 23:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市益百分电子有限公司
BSS138
FAI
13+
SOT23
15000
原装现货价格有优势量大可以发货
询价
深圳市凌旭科技有限公司
BSS138
FAIRCHILD
2016+
SOT-23
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市天芯威科技有限公司
BSS138
GOODWORK/固得沃克
23+
SOT-23
15800
新到现货,只有原装
询价
深圳市创盛芯科技有限公司
BSS138W-7-F
DIODES/美台
21+
SOT-323-3
92918
原装现货 假一赔十
询价
鑫勃源（上海北京 青岛）有限公司
BSS138
FSC
23+
DIP8
18000
询价
深圳市卓越微芯电子有限公司
BSS138
FAIRCHI
2020+
SOT-23
8691
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市高捷芯城科技有限公司
BSS138LT1
ON(安森美)
23+
标准封装
22048
全新原装正品/价格优惠/质量保障
询价
绿盛电子(香港)有限公司
BSS138
LRC
2015+
SOT23
28989
一级代理原装现货,特价热卖!
询价
深圳市英博尔电子有限公司
BSS138NH6433XTMA1
INFINEON
23+
SOT23
10000
全新、原装
询价
深圳市福安瓯科技有限公司
BSS138
FAI
22+
SOT-23
2500
强调现货,随时查询!
询价

BSS138芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

BSS138规格书下载地址

BSS138参数引脚图相关

BSS138数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示