SiliconMMICamplifier

DESCRIPTION SiliconMMICamplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Lowcurrent,lowvoltage •Veryhighpowergain •Lownoisefigure •Integratedtemperature

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP CELLULAR 1.8GHZ CMPAK-4 RF/IF，射频/中频和 RFID 射频放大器

1.0Watt-28Volts,ClassCMicrowave2000MHz

GENERALDESCRIPTION The2001isaCOMMONBASEtransistorcapableofproviding1WattsClassC,RFoutputpowerat2000MHz.GoldMetalizationanddiffusedballastingareusedtoprovidehighreliabilityandsupremeruggedness.ThetransistorusesafullyhermeticHighTemperatureSolderSealedpa

USPowerSupplyCordwithIECConnectorC13,V-Lock,straight

Description -PowerCord,ProtectionclassI,Pintemperature70°C, -withV-Lockinterlockingsystem

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingDiffusedCollectortechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWSERIES,ENHANCEDPERFORMANCE ■FULLYINSULATEDPACKAGE(U.L.COMPLIANT)FOREASYMOUNTING ■HIGHVOLTAGECAP

HighVoltageHighCurrentDarlingtonArrays

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS Ideallysuitedforinterfacingbetweenlow-levellogiccircuitryandmultipleperipheralpowerloads,theSeriesULN20xxA/Lhigh-voltage,high-currentDarlingtonarraysfeaturecontinuousloadcurrentratingsto500mAforeachofthesevendrivers.At

7½-DigitHighPerformanceMultimeter8½-DigitHighPerformanceMultimeter

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