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BF110晶体管资料
BF110别名：BF110三极管、BF110晶体管、BF110晶体三极管
BF110生产厂家：德国AEG公司_德国西门子AG公司_德国凡尔伏公司
BF110制作材料：Si-NPN
BF110性质：视频输出 （Vid）
BF110封装形式：直插封装
BF110极限工作电压：160V
BF110最大电流允许值：0.04A
BF110最大工作频率：150MHZ
BF110引脚数：3
BF110最大耗散功率：0.75W
BF110放大倍数：
BF110图片代号：C-40
BF110vtest：160
BF110htest：150000000
- BF110atest：.04
BF110wtest：.75
BF110代换 BF110用什么型号代替：BF257,BF258,BF259,BF336,BF657,BF658,BF659,2N5058,2N5059,3DA87C,
BF110价格
参考价格：￥0.3640
型号：BF1100 品牌：NXP/PHILIPS 备注：这里有BF110多少钱，2024年最近7天走势，今日出价，今日竞价，BF110批发/采购报价，BF110行情走势销售排行榜，BF110报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BF110 | 2.0mmPitchPinHeaderDualRow,SurfaceMount 文件：116.1 Kbytes Page：1 Pages | GCT GCT Semiconductor |  |   |
Dual-gateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
Dual-gateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
Dual-gateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Dual-gateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual-gateMOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Special | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual-gateMOS-FET FEATURES Speciallydesignedforuseat9to12Vsupplyvoltage Shortchanneltransistorwithhighforwardtransfer admittancetoinputcapacitanceratio Lownoisegaincontrolledamplifierupto1GHz Superiorcross-modulationperformanceduringAGC. APPLICATIONS VHFandUHFappl | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
DualN-channeldualgateMOS-FET DESCRIPTION TheBF1102andBF1102RarebothtwoequaldualgateMOS-FETswhichhaveasharedsourcepinandasharedgate2pin.Bothdeviceshaveinterconnectedsourceandsubstrate;aninternalbiascircuitenablesDCstabilizationandaverygoodcross-modulationperformanceat5Vsupplyvolt | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channelsinglegateMOS-FETs DESCRIPTION TheBF1107andBF1107Waredepletiontypefield-effecttransistorsinSOT23andSOT323packagesrespectively. ThelowlossandhighisolationcapabilitiesofthisMOS-FETprovideexcellentRFswitchingfunctions. Integrateddiodesbetweengateandsourceandbetweengateanddrainp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channelsinglegateMOSFET Generaldescription TheBF1107isadepletiontypefield-effecttransistorinaSOT23package.ThelowlossandhighisolationcapabilitiesofthisMOSFETprovideexcellentRFswitchingfunctions.Integrateddiodesbetweengateandsourceandbetweengateanddrainprotectagainstexcessiveinput | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channelsinglegateMOS-FETs DESCRIPTION TheBF1107andBF1107Waredepletiontypefield-effecttransistorsinSOT23andSOT323packagesrespectively. ThelowlossandhighisolationcapabilitiesofthisMOS-FETprovideexcellentRFswitchingfunctions. Integrateddiodesbetweengateandsourceandbetweengateanddrainp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
SiliconRFswitches DESCRIPTION Theseswitchesareacombinationofadepletiontypefield-effecttransistorandabandswitchingdiodeinanSOT143B(BF1108)orSOT143R(BF1108R)package.ThelowlossandhighisolationcapabilitiesofthesedevicesprovideexcellentRFswitchingfunctions.ThegateoftheMOSFETca | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
SiliconRFswitches Generaldescription TheseswitchesareacombinationofadepletiontypeField-EffectTransistor(FET)andaband-switchingdiodeinanSOT143B(BF1108)orSOT143R(BF1108R)package.ThelowlossandhighisolationcapabilitiesofthesedevicesprovideexcellentRFswitchingfunctions.Thegateo | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
SiliconRFswitches Generaldescription TheseswitchesareacombinationofadepletiontypeField-EffectTransistor(FET)andaband-switchingdiodeinanSOT143B(BF1108)orSOT143R(BF1108R)package.ThelowlossandhighisolationcapabilitiesofthesedevicesprovideexcellentRFswitchingfunctions.Thegateo | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
SiliconRFswitches DESCRIPTION Theseswitchesareacombinationofadepletiontypefield-effecttransistorandabandswitchingdiodeinanSOT143B(BF1108)orSOT143R(BF1108R)package.ThelowlossandhighisolationcapabilitiesofthesedevicesprovideexcellentRFswitchingfunctions.ThegateoftheMOSFETca | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs FEATURES Shortchanneltransistorwithhigh forwardtransferadmittancetoinput capacitanceratio Lownoisegaincontrolledamplifier upto1GHz Internalself-biasingcircuitto ensuregoodcross-modulation performanceduringAGCandgood DCstabilization. APPLICATIONS VHFand | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1109,BF1109RandBF1109WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1109,BF1109RandBF1109WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channeldual-gateMOS-FETs FEATURES Shortchanneltransistorwithhigh forwardtransferadmittancetoinput capacitanceratio Lownoisegaincontrolledamplifier upto1GHz Internalself-biasingcircuitto ensuregoodcross-modulation performanceduringAGCandgood DCstabilization. APPLICATIONS VHFand | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs FEATURES Shortchanneltransistorwithhigh forwardtransferadmittancetoinput capacitanceratio Lownoisegaincontrolledamplifier upto1GHz Internalself-biasingcircuitto ensuregoodcross-modulation performanceduringAGCandgood DCstabilization. APPLICATIONS VHFand | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1109,BF1109RandBF1109WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual-gateMOS-FETs 文件：115.02 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |  | | |
Dual-gateMOS-FETs 文件：115.02 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
封装/外壳：SOT-143R 包装：托盘 描述：MOSFET N-CH 14V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
封装/外壳：SOT-143R 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 14V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Dual-gateMOS-FET 文件：106.65 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
Dual-gateMOS-FET 文件：106.65 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
N-channeldual-gateMOS-FETs 文件：399.37 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs 文件：141.15 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
N-channeldual-gateMOS-FETs 文件：141.15 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
N-channeldual-gateMOS-FETs 文件：399.37 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs 文件：399.37 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gateMOS-FETs 文件：399.37 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOS-FETs 文件：133.68 Kbytes Page：16 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOS-FETs 文件：133.68 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
DualN-channeldualgateMOS-FETs 文件：133.68 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
DCBlowerFan110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. |  | | |
DCBlowerFan110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | |
BF110产品属性
- 类型
描述
- 型号
BF110
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
Dual-gate MOS-FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS |
2020+ |
SOT-143 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEXP |
23+ |
SOT363 |
45000 |
热卖优势现货 |
|||
PHILIPA |
1912+ |
厂家第一经销售 |
16850 |
绝对优势 |
|||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨询更多详细信息, |
|||
SOT-143 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PHILIPS/飞利浦 |
SOT-143 |
1698 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
PHILIPS/飞利浦 |
23+ |
NA/ |
1698 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MOT/PH/ST/SS |
2022+ |
CAN3 |
3000 |
只售进口原装公司现货! |
|||
NXP(恩智浦) |
23+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
|||
PHILIPS/飞利浦 |
2023+ |
SOT-143 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
BF110芯片相关品牌
BF110规格书下载地址
BF110参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BF140
- BF138
- BF137
- BF136
- BF134
- BF133
- BF132
- BF131
- BF130
- BF127
- BF125
- BF123
- BF121
- BF1201
- BF120
- BF119
- BF118
- BF117
- BF115
- BF114
- BF1118W
- BF1118R
- BF1118
- BF111
- BF1109R
- BF1109
- BF1108W
- BF1108R
- BF1108
- BF1107W
- BF1107
- BF1105R
- BF1105
- BF1102R
- BF1102
- BF1101R
- BF1101
- BF1100R
- BF1100
- BF10S
- BF109
- BF108
- BF102M
- BF1012W
- BF1012S
- BF1012
- BF1009S
- BF1009
- BF1005W
- BF1005S
- BF1005R
- BF1005
- BF-1001
- BF1
- BF091M
- BEXXCB3
- BEXXCB1
- BEXXCA3
- BEXXCA1
- BEXXBB3
- BEXXBB1
- BEXXBA3
- BDY99
- BDY98
- BDY97
- BDY96
- BDY95
- BDY94
- BDY93
- BDY92
- BDY91
- BDY90
- BDY89
- BDY88
- BDY87
- BDY83(A,B,C)
- BDY82(A,B,C)
- BDY81(A,B,C)
- BDY80(A,B,C)
BF110数据表相关新闻
BD9F500QUZ-E2
进口代理
2024-4-18BE-A301
BE-A301
2022-3-15BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
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BF7612CM28，BYD，40K，21+
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JFET-25V射频结栅场效应晶体管(RFJFET)晶体管,SMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFET射频结栅场效应晶体管(RFJFET)晶体管,GaNSiCSMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFETN-Channel射频结栅场效应晶体管(RFJFET)晶体管,MESFET射
2020-8-5BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHMSemiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC/DC转换器
2020-6-9
DdatasheetPDF页码索引
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