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位置：首页 > IC中文资料第1385页 > BD136

BD136晶体管资料

  • BD136(-6...-16)别名：BD136(-6...-16)三极管、BD136(-6...-16)晶体管、BD136(-6...-16)晶体三极管

  • BD136(-6...-16)生产厂家：德国AEG公司_德国椤茨标准电器公司_荷兰飞利浦公司

  • BD136(-6...-16)制作材料：Si-PNP

  • BD136(-6...-16)性质：低频或音频放大 （LF）_功率放大 （L）

  • BD136(-6...-16)封装形式：直插封装

  • BD136(-6...-16)极限工作电压：45V

  • BD136(-6...-16)最大电流允许值：1.5A

  • BD136(-6...-16)最大工作频率：<1MHZ或未知

  • BD136(-6...-16)引脚数：3

  • BD136(-6...-16)最大耗散功率：12.5W

  • BD136(-6...-16)放大倍数：

  • BD136(-6...-16)图片代号：B-21

  • BD136(-6...-16)vtest：45

  • BD136(-6...-16)htest：999900

  • BD136(-6...-16)atest：1.5

  • BD136(-6...-16)wtest：12.5

  • BD136(-6...-16)代换 BD136(-6...-16)用什么型号代替：BD166,BC176,BD227,BD234,BD438,3CA4C,

BD136价格

参考价格：￥0.3695

型号：BD136 品牌：STMicroelectronics 备注：这里有BD136多少钱，2024年最近7天走势，今日出价，今日竞价，BD136批发/采购报价，BD136行情走势销售排行榜，BD136报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BD136

PNPpowertransistors

DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD135,BD137andBD139. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Generalpurposepowerapplications,e.g.driverstagesinhi-fiamplifiersandtelevisi

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BD136

PNPSILICONTRANSISTORS

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136

PlasticMediumPowerSiliconPNPTransistor

1.5AMPEREPOWERTRANSISTORSPNPSILICON45,60,80VOLTS10WATTS ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD136,138,140arecomplementarywithBD135,137,139

MotorolaMotorola, Inc

摩托罗拉

Motorola
BD136

PNPSILICONTRANSISTORS

POWERTRANSISTORSPNPSILICON

SIEMENS

Siemens Ltd

SIEMENS
BD136

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136

PNPSILICONTRANSISTOR

DESCRIPTION TheUTCBD136/BD138/BD140aresiliconepitaxialplanerPNPtransistor,designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ThecomplementaryNPNtypesaretheBD135/BD137/BD139.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BD136

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
BD136

PNPPLASTICPOWERTRANSISTORS

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
BD136

EPITAXIALPLANARPNPTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:-1.5A) •LowVoltage(Max.:-45V) •DCCurrentGain:hFE=40Min.@IC=-0.15A •ComplementarytoBD135.

KECKEC CORPORATION

KEC株式会社

KEC
BD136

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD135/137/139 APPLICATIONS •Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD136

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Highcurrent ·ComplementtotypeBD135/137/139 APPLICATIONS ·Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

SAVANTIC

Savantic, Inc.

SAVANTIC
BD136

PlasticMediumPowerSiliconPNPTransistor

PlasticMediumPowerSiliconPNPTransistor Thisseriesofplastic,medium−powersiliconPNPtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable* •DCCurrentGain−hFE=40(Min)@

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD136

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications MediumPowerLinearandSwitchingApplications

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136

SiliconPNPtransistorinaTO-126FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-126FPlasticPackage. Features ComplementtoBD135. Applications Mediumpowerlinearandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BD136

PNPGeneralPurposeTransistor

FEATURES •HighCurrent

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD136

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136

Complementarylowvoltagetransistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighCurrent ●ComplementToBD135,BD137AndBD139

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BD136

EPITAXIALSILICONPOWERTRANSISTORS

PNPEPITAXIALSILICONPOWERTRANSISTORS DesignedforuseasAudioAmplifierandDriversUtilizing ComplementaryBD135,BD137,BD139

CDIL

CDIL

CDIL
BD136

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
BD136

PNPEpitaxialSiliconTransistor

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136

SiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min)@lc=-0.15A •Collector-EmitterSustainingVoltage- :VCEO(sus)=-45V(Min) •ComplementtotypeBD135 APPLICATIONS •Designedforuseasaudioamplifiersanddriversutilizing complementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BD136

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BD136

GERMANIOVETRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BD136

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 45V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD136

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136

SiliconNPNPowerTransistors

文件：112.89 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BD136

TRANSISTOR(PNP)

文件：216.56 Kbytes Page：2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
BD136

SILICONPLANAREPITAXIALPOWERTRANSISTORS.

文件：74.34 Kbytes Page：3 Pages

COMSET

Comset Semiconductor

COMSET
BD136

Complementarylowvoltagetransistor

文件：157.51 Kbytes Page：9 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136

PNPSILICONTRANSISTORS

文件：76.38 Kbytes Page：4 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136_V01

PNPEpitaxialSiliconTransistor

Applications •ComplementtoBD135,BD137andBD139Respectively •ThesearePb−FreeDevices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD13610

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136-10

PNPSILICONTRANSISTORS

POWERTRANSISTORSPNPSILICON

SIEMENS

Siemens Ltd

SIEMENS
BD136-10

PNPpowertransistors

DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD135,BD137andBD139. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Generalpurposepowerapplications,e.g.driverstagesinhi-fiamplifiersandtelevisi

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BD136-10

PNPGeneralPurposeTransistor

FEATURES •HighCurrent

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD136-10

PNPGeneralPurposeTransistor

FEATURES •HighCurrent

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD13610S

PNPEpitaxialSiliconTransistor

Applications •ComplementtoBD135,BD137andBD139Respectively •ThesearePb−FreeDevices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD13610STU

PNPEpitaxialSiliconTransistor

Applications •ComplementtoBD135,BD137andBD139Respectively •ThesearePb−FreeDevices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD13610STU

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD13616

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136-16

PNPpowertransistors

DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD135,BD137andBD139. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Generalpurposepowerapplications,e.g.driverstagesinhi-fiamplifiersandtelevisi

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BD136-16

Complementarylowvoltagetransistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136-16

PNPSILICONTRANSISTORS

POWERTRANSISTORSPNPSILICON

SIEMENS

Siemens Ltd

SIEMENS
BD136-16

Complementarylowvoltagetransistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136-16

PNPGeneralPurposeTransistor

FEATURES •HighCurrent

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD136-16

PNPGeneralPurposeTransistor

FEATURES •HighCurrent

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD13616S

PNPEpitaxialSiliconTransistor

Applications •ComplementtoBD135,BD137andBD139Respectively •ThesearePb−FreeDevices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD13616STU

PNPEpitaxialSiliconTransistor

Applications •ComplementtoBD135,BD137andBD139Respectively •ThesearePb−FreeDevices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD1366

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD136-6

PNPSILICONTRANSISTORS

POWERTRANSISTORSPNPSILICON

SIEMENS

Siemens Ltd

SIEMENS
BD136-6

PNPGeneralPurposeTransistor

FEATURES •HighCurrent

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD136-6

PNPGeneralPurposeTransistor

FEATURES •HighCurrent

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD136G

PlasticMediumPowerSiliconPNPTransistor

PlasticMediumPowerSiliconPNPTransistor Thisseriesofplastic,medium−powersiliconPNPtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable* •DCCurrentGain−hFE=40(Min)@

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD136-TU

TO-126Plastic-EncapsulateTransistors

FEATURES HighCurrent ComplementToBD135,BD137AndBD139

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BD136_01

PNPSILICONTRANSISTORS

文件：76.38 Kbytes Page：4 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD136_11

PNPSILICONTRANSISTOR

文件：136.98 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BD136_17

iscSiliconPNPPowerTransistor

文件：256.89 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD136-10

PowerTransistorsPnPSiliconVolts

文件：317.14 Kbytes Page：3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

BD136产品属性

  • 类型

    描述

  • 型号

    BD136

  • 功能描述

    两极晶体管 - BJT PNP Audio Amplfier

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

BD136供应商更多...

更新时间：2024-4-16 23:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
BD136-16
ST(意法半导体)
23+
SOT-32
942
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市纳艾斯科技有限公司
BD136
ST/意法
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市卓越微芯电子有限公司
BD136
2020+
原厂封装
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市科恒伟业电子有限公司
BD136
PHI
1738+
TO-126F
8529
科恒伟业!只做原装正品,假一赔十!
询价
中天科工半导体（深圳）有限公司
BD136G
onsemi
23+
TO-225AA,TO-126-3
30000
晶体管-分立半导体产品-原装正品
询价
深圳市粤骏腾电子科技有限公司
BD136-16
FAIRCHILD/仙童
16+
TO-126F
190
十年沉淀唯有原装
询价
深圳市明嘉莱科技有限公司
BD136(TO-126)
长电
23+
SMD
515000
明嘉莱只做原装正品现货
询价
深圳市博浩通科技有限公司
BD136
PH/ST
23+
TO-126
30371
全新原装现货
询价
千层芯半导体(深圳)有限公司
BD136
STM
17+
原厂原封
13900
只做原装
询价
深圳市振宏微科技有限公司
BD136
ST
23+
TO-220
5000
专做原装正品,假一罚百!
询价

BD136芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

BD136规格书下载地址

BD136参数引脚图相关

BD136数据表相关新闻

DdatasheetPDF页码索引

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