位置：首页 > IC中文资料第10850页 > BCR5
BCR5晶体管资料
BCR503别名：BCR503三极管、BCR503晶体管、BCR503晶体三极管
BCR503生产厂家：
BCR503制作材料：Si-N+R
BCR503性质：表面帖装型 （SMD）
BCR503封装形式：贴片封装
BCR503极限工作电压：50V
BCR503最大电流允许值：0.5A
BCR503最大工作频率：<1MHZ或未知
BCR503引脚数：3
BCR503最大耗散功率：
BCR503放大倍数：
BCR503图片代号：H-15
BCR503vtest：50
BCR503htest：999900
- BCR503atest：.5
BCR503wtest：0
BCR503代换 BCR503用什么型号代替：DTD123EK,RN1222,UN4221,2SC3923,
BCR5价格
参考价格：￥0.2108
型号：BCR503E6327 品牌：INF 备注：这里有BCR5多少钱，2024年最近7天走势，今日出价，今日竞价，BCR5批发/采购报价，BCR5行情走势销售排行榜，BCR5报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR5 | MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE MEDIUMPOWERUSEINSULATEDTYPE,PLANARPASSIVATIONTYPE ●IT(RMS)..................................................................5A ●VDRM......................................................400V/600V ●IFGT!,IRGT!,IRGT#...................15mA(10mA)✽2 ●ULRecognized:Fil | MitsubishiMITSUBISHI electlic 三菱电机 |  |   |
BCR5 | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MEDIUMPOWERUSENON-INSULATEDTYPE,PLANARPASSIVATIONTYPE •IT(RMS)........................................................................5A •VDRM..............................................................400V/600V •IFGT!,IRGT!,IRGT#........................................... | MitsubishiMITSUBISHI electlic 三菱电机 | | |
BCR5 | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Refertothepage6astotheproductguaranteedmaximumjunctiontemperature150°C APPLICATION Switchingmodepowersupply,lightdimmer,electricflasherunit,controlofhouseholdequipmentsuchasTVsets·stereo·refrigerator·washingmachine·infraredkotatsu·carpet,solenoidd | MitsubishiMITSUBISHI electlic 三菱电机 | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 |  | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | | | |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) | SIEMENS Siemens Ltd |  | | |
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | | | |
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=2.2kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Builtinbiasresistor(R1=4.7kΩ,R2=4.7kΩ) | SIEMENS Siemens Ltd | | | |
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=4.7kΩ,R2=4.7kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ) | SIEMENS Siemens Ltd | | | |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=1kΩ,R2=1kΩ) | SIEMENS Siemens Ltd | | | |
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=1kΩ,R2=1kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinresistor(R1=1kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | | | |
NPN Silicon Digital Transistor NPNSiliconDigitalTransistors •Switchingcircuit,invertercircuit, drivercircuit •Builtinbiasresistor(R1=1kΩ,R2=10kΩ) •BCR523U:Two(galvanic)internalisolated transistorswithgoodmatchinginonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Digital Transistors NPNSiliconDigitalTransistors •Switchingcircuit,invertercircuit, drivercircuit •Builtinbiasresistor(R1=1kΩ,R2=10kΩ) •BCR523U:Two(galvanic)internalisolated transistorswithgoodmatchinginonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | | | |
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) | SIEMENS Siemens Ltd | | | |
PNP Silicon Digital Transistor PNPSiliconDigitalTransistor •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinresistor(R1=2.2kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | | | |
PNP Silicon Digital Transistor PNPSiliconDigitalTransistor •Builtinbiasresistor(R1=2.2kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor PNPSiliconDigitalTransistor •Builtinbiasresistor(R1=2.2kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=4.7kΩ) | SIEMENS Siemens Ltd | | | |
PNP Silicon Digital Transistor PNPSiliconDigitalTransistor •Builtinbiasresistor(R1=4.7kΩ,R2=4.7kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNPSiliziumDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=4.7kΩ) | SIEMENS Siemens Ltd | | | |
PNP Silizium Digital Transistor PNPSiliziumDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=4.7kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=1kΩ,R2=1kΩ) | SIEMENS Siemens Ltd | | | |
PNP Silicon Digital Transistor PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=1kΩ,R2=1kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor PNPSiliconDigitalTransistor •Builtinbiasresistor(R1=1kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinresistor(R1=1kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | | | |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | | | |
PNP Silicon Digital Transistor PNPSiliconDigitalTransistor •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Refertothepage6astotheproductguaranteedmaximumjunctiontemperature150°C APPLICATION Switchingmodepowersupply,lightdimmer,electricflasherunit,controlofhouseholdequipmentsuchasTVsets·stereo·refrigerator·washingmachine·infraredkotatsu·carpet,solenoidd | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
Triac 5 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □SelectedforInductiveLoads Applications: □ACSwitch □Heating □MotorControls | POWEREX POWEREX |  | | |
Standard Triac GeneralDescription ThisdeviceisfullyisolatedpackagesuitableforACswitchingapplication,phasecontrolapplicationsuchasfanspeedandtemperaturemodulationcontrol,lightingcontrolandstaticswitchingrelay.ThisdevicemaysubstituteforBTA06-600,BTB06-600,BCR5AM,BCR5PM-12L, | APOLLOELECTRON Apollo Electron Co., Ltd. |  | | |
Triac 5 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □SelectedforInductiveLoads Applications: □ACSwitch □Heating □MotorControls | POWEREX POWEREX | | | |
isc Triacs FEATURES ·WithTO-220ABnoninsulatedpackage ·SuitableforgeneralpurposeACswitching.WhichcanbeusedasanON/OFFfunctionin applicationssuchasstaticrelays,heatingregulation,inductionmotorstartingcircuits. Orforphasecontroloperationinlightdimmers,motorspeedcontroll | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Triac 5 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □SelectedforInductiveLoads Applications: □ACSwitch □Heating □MotorControls | POWEREX POWEREX | | | |
Triac 5 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □SelectedforInductiveLoads Applications: □ACSwitch □Heating □MotorControls | POWEREX POWEREX | | | |
Triac 5 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □SelectedforInductiveLoads Applications: □ACSwitch □Heating □MotorControls | POWEREX POWEREX | | |
BCR5产品属性
- 类型
描述
- 型号
BCR5
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
TO-220F-3 |
45 |
||||
INF |
23+ |
147 |
|||||
INFINEON/英飞凌 |
2102+ |
SOT23-6 |
6854 |
只做原厂原装正品假一赔十! |
|||
Infineon/英飞凌 |
23+ |
SC74-6 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
22+ |
SOT-23 |
7880 |
原装正品现货 可开增值税发票 |
|||
INFINEON/英飞凌 |
24+ |
SOT23-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
23+ |
SOT-23 |
20000 |
原装正品 欢迎咨询 |
|||
RENESAS |
2020+ |
TO-252 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
NA |
20+ |
SOT-23 |
2159 |
全新原装现货 |
|||
Renesas |
1741+ |
TO-220F |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
BCR5芯片相关品牌
BCR5规格书下载地址
BCR5参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BCR8A-4
- BCR6AM-8
- BCR6AM-6
- BCR6AM-4
- BCR6AM-112
- BCR6AM-10
- BCR6AM
- BCR5PM
- BCR5KM
- BCR5AS
- BCR5AM
- BCR583
- BCR573
- BCR571
- BCR569
- BCR562
- BCR555
- BCR553
- BCR533
- BCR523U
- BCR523
- BCR521
- BCR519
- BCR512
- BCR505
- BCR503
- BCR48PN
- BCR48
- BCR450
- BCR430U
- BCR42PN
- BCR421U
- BCR420U
- BCR42
- BCR410W
- BCR410
- BCR405U
- BCR402W
- BCR402U
- BCR402R
- BCR402
- BCR401W
- BCR401U
- BCR401R
- BCR401
- BCR400W
- BCR3AM-8
- BCR3AM-4
- BCR3AM-12
- BCR3AM-10
- BCR30GM-8
- BCR30GM-6
- BCR30GM-4
- BCR30GM-10
- BCR25B-4...-10
- BCR25A-8
- BCR25A-6
- BCR25A-4
- BCR25A-10
- BCR20E-4...-10
- BCR20C-4...-10
- BCR20B-4...-10
- BCR1AM-8
- BCR1AM-6
- BCR1AM-4
- BCR1AM-12
BCR5数据表相关新闻
BCR108SH6327XTSA1
BCR108SH6327XTSA1三极管INFINEON/英飞凌封装SOT363
2022-8-1BCX56-16 CJ/长电 SOT-89 支持原装长电订货型号，欢迎咨询！
BCX56-16CJ/长电SOT-89
2021-5-18BCP68
BCP68
2020-11-3BCV46E6327绝对有货陆续到货中
BCV46E6327 绝对有货陆续到货中
2020-10-31BCP56-16 NXP
BCP56-16NXP
2020-10-13BD13516STU原装现货厂商：FAIRCHILD/仙童封装：NA
原装现货
2019-9-11
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
