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BCP56晶体管资料
BCP56别名:BCP56三极管、BCP56晶体管、BCP56晶体三极管
BCP56生产厂家:荷兰飞利浦公司
BCP56制作材料:Si-NPN
BCP56性质:射频/高频放大 (HF)_功率放大 (L)
BCP56封装形式:贴片封装
BCP56极限工作电压:80V
BCP56最大电流允许值:1A
BCP56最大工作频率:130MHZ
BCP56引脚数:3
BCP56最大耗散功率:1.5W
BCP56放大倍数:β=250
BCP56图片代号:H-99
BCP56vtest:80
BCP56htest:130000000
- BCP56atest:1
BCP56wtest:1.5
BCP56代换 BCP56用什么型号代替:
BCP56价格
参考价格:¥0.7129
型号:BCP56 品牌:Fairchild 备注:这里有BCP56多少钱,2024年最近7天走势,今日出价,今日竞价,BCP56批发/采购报价,BCP56行情走势销售排行榜,BCP56报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BCP56 | NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BCP56 | MEDIUM POWER AMPLIFIER MEDIUMPOWERAMPLIFIER ■SILICONEPITAXIALPLANARNPN TRANSISTORS ■MINIATUREPLASTICPACKAGEFOR APPLICATIONINSURFACEMOUNTING CIRCUITS ■GENERALPURPOSEMAINLYINTENDED FORUSEINMEDIUMPOWERINDUSTRIAL APPLICATIONANDFORAUDIOAMPLIFIER OUTPUTSTAGE ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BCP56 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) | Zetex Zetex Semiconductors | ||
BCP56 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | ||
BCP56 | NPN General Purpose Amplifier NPNGeneralPurposeAmplifier Thesedevicesaredesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1A.SourcedfromProcess39. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BCP56 | NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BCP56 | Surface mount Si-Epitaxial PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | ||
BCP56 | NPN Silicon Planar Epitaxial Transistor NPNSiliconPlanarEpitaxialTransistor P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | ||
BCP56 | NPN Medium Power Transistor ■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP51,BCP52,BCP53 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BCP56 | NPN Silicon Medium Power Transistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP53(PNP) | SECOS SeCoS Halbleitertechnologie GmbH | ||
BCP56 | 80 V, 1 A NPN medium power transistors Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BCP56 | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | ||
BCP56 | 80 V, 1 A NPN medium power transistors Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BCP56 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
BCP56 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPNSILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeMediumPowerDCApplications ComplementaryBCP51BCP52andBCP53 | CDIL CDIL | ||
BCP56 | High Collector Current Features Highcollectorcurrent 1.3Wpowerdissipation. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | ||
BCP56 | High Collector Current Features Highcollectorcurrent 1.3Wpowerdissipation. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | ||
BCP56 | TRANSISTOR (NPN) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
BCP56 | Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
BCP56 | 80 V, 1 A NPN medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BCP56 | 80 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BCP56 | 80 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BCP56 | NPN Silicon Epitaxial Transistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BCP56 | For AF driver and output stages 文件:1.00096 Mbytes Page:4 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
BCP56 | For AF driver and output stages 文件:533.22 Kbytes Page:5 Pages | FS First Silicon Co., Ltd | ||
BCP56 | NPN Transistors 文件:945.09 Kbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BCP56 | 80 V, 1 A NPN medium power transistors 文件:1.12009 Mbytes Page:22 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BCP56 | Surface Mount General Purpose Si-Epi-Planar Transistors 文件:108.22 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
BCP56 | 封装/外壳:TO-261-4,TO-261AA 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 80V 1.2A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
80 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) | Zetex Zetex Semiconductors | |||
NPN Silicon AF Transistors (For AF driver and output stages High collector current) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | |||
NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
80 V, 1 A NPN medium power transistors Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
80 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80 V, 1 A NPN medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80 V, 1 A PNP medium power transistors Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80 V, 1 A NPN medium power transistors Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | |||
80 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | |||
80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | |||
80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | |||
80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | |||
80 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
NPN Silicon Epitaxial Transistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN Silicon Epitaxial Transistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN Silicon Epitaxial Transistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN Silicon Epitaxial Transistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
80 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
Low power NPN Transistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) | Zetex Zetex Semiconductors | |||
NPN Silicon AF Transistors (For AF driver and output stages High collector current) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | |||
NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Low power NPN Transistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
BCP56产品属性
- 类型
描述
- 型号
BCP56
- 功能描述
两极晶体管 - BJT SOT-223 NPN GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT223 |
20000 |
热卖优势现货 |
|||
ON/安森美 |
21+ |
SOT-223 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
ON |
2021+ |
SOT-223 |
16800 |
全新原装正品,自家优势现货 |
|||
STM |
2339+ |
NA |
5645 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
NXP |
2020+ |
SOT223 |
1000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
PHILIPS |
23+ |
SOT223 |
9365 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
|||
NXP |
2016+ |
SOT223 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PHILIPS |
2016+ |
SOT223 |
3526 |
假一罚十进口原装现货原盘原标! |
|||
NXPPHILIPS |
23+ |
原厂封装 |
12300 |
||||
NEXPERIA/安世 |
20+ |
SOT-223 |
15000 |
原装现货/假一罚十 |
BCP56规格书下载地址
BCP56参数引脚图相关
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BCP56数据表相关新闻
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BCP54SOT-22345V高端芯片热卖产品质量保证可提供样品
2019-2-28
DdatasheetPDF页码索引
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