BCP56晶体管资料

  • BCP56别名:BCP56三极管、BCP56晶体管、BCP56晶体三极管

  • BCP56生产厂家:荷兰飞利浦公司

  • BCP56制作材料:Si-NPN

  • BCP56性质:射频/高频放大 (HF)_功率放大 (L)

  • BCP56封装形式:贴片封装

  • BCP56极限工作电压:80V

  • BCP56最大电流允许值:1A

  • BCP56最大工作频率:130MHZ

  • BCP56引脚数:3

  • BCP56最大耗散功率:1.5W

  • BCP56放大倍数:β=250

  • BCP56图片代号:H-99

  • BCP56vtest:80

  • BCP56htest:130000000

  • BCP56atest:1

  • BCP56wtest:1.5

  • BCP56代换 BCP56用什么型号代替

BCP56价格

参考价格:¥0.7129

型号:BCP56 品牌:Fairchild 备注:这里有BCP56多少钱,2024年最近7天走势,今日出价,今日竞价,BCP56批发/采购报价,BCP56行情走势销售排行榜,BCP56报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BCP56

NPN medium power transistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BCP56

MEDIUM POWER AMPLIFIER

MEDIUMPOWERAMPLIFIER ■SILICONEPITAXIALPLANARNPN TRANSISTORS ■MINIATUREPLASTICPACKAGEFOR APPLICATIONINSURFACEMOUNTING CIRCUITS ■GENERALPURPOSEMAINLYINTENDED FORUSEINMEDIUMPOWERINDUSTRIAL APPLICATIONANDFORAUDIOAMPLIFIER OUTPUTSTAGE ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BCP56

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat)

Zetex

Zetex Semiconductors

Zetex
BCP56

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS
BCP56

NPN General Purpose Amplifier

NPNGeneralPurposeAmplifier Thesedevicesaredesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1A.SourcedfromProcess39.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BCP56

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCP56

Surface mount Si-Epitaxial PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
BCP56

NPN Silicon Planar Epitaxial Transistor

NPNSiliconPlanarEpitaxialTransistor P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
BCP56

NPN Medium Power Transistor

■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP51,BCP52,BCP53

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BCP56

NPN Silicon Medium Power Transistor

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP53(PNP)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BCP56

80 V, 1 A NPN medium power transistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BCP56

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES
BCP56

80 V, 1 A NPN medium power transistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BCP56

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BCP56

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPNSILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeMediumPowerDCApplications ComplementaryBCP51BCP52andBCP53

CDIL

CDIL

CDIL
BCP56

High Collector Current

Features Highcollectorcurrent 1.3Wpowerdissipation.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BCP56

High Collector Current

Features Highcollectorcurrent 1.3Wpowerdissipation.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BCP56

TRANSISTOR (NPN)

FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
BCP56

Plastic-Encapsulate Transistors

FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
BCP56

80 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BCP56

80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BCP56

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BCP56

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BCP56

For AF driver and output stages

文件:1.00096 Mbytes Page:4 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
BCP56

For AF driver and output stages

文件:533.22 Kbytes Page:5 Pages

FS

First Silicon Co., Ltd

FS
BCP56

NPN Transistors

文件:945.09 Kbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BCP56

80 V, 1 A NPN medium power transistors

文件:1.12009 Mbytes Page:22 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BCP56

Surface Mount General Purpose Si-Epi-Planar Transistors

文件:108.22 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BCP56

封装/外壳:TO-261-4,TO-261AA 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 80V 1.2A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN medium power transistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat)

Zetex

Zetex Semiconductors

Zetex

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

80 V, 1 A NPN medium power transistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80 V, 1 A PNP medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80 V, 1 A NPN medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

DIODES

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

DIODES

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

DIODES

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

DIODES

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

DIODES

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN Silicon Epitaxial Transistor

TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

Low power NPN Transistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPN medium power transistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat)

Zetex

Zetex Semiconductors

Zetex

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Low power NPN Transistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

BCP56产品属性

  • 类型

    描述

  • 型号

    BCP56

  • 功能描述

    两极晶体管 - BJT SOT-223 NPN GP AMP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-3-28 19:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEXPERIA/安世
23+
SOT223
20000
热卖优势现货
ON/安森美
21+
SOT-223
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
ON
2021+
SOT-223
16800
全新原装正品,自家优势现货
STM
2339+
NA
5645
公司原厂原装现货假一罚十!特价出售!强势库存!
NXP
2020+
SOT223
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
PHILIPS
23+
SOT223
9365
价格优势、原装现货、客户至上。欢迎广大客户来电查询
NXP
2016+
SOT223
6000
只做原装,假一罚十,公司可开17%增值税发票!
PHILIPS
2016+
SOT223
3526
假一罚十进口原装现货原盘原标!
NXPPHILIPS
23+
原厂封装
12300
NEXPERIA/安世
20+
SOT-223
15000
原装现货/假一罚十

BCP56芯片相关品牌

  • ANAREN
  • CDE
  • COMCHIP
  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • Philips
  • WALSIN
  • WURTH

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