BCP56-16价格

参考价格:¥0.3700

型号:BCP56-16 品牌:STMicroelectronics 备注:这里有BCP56-16多少钱,2024年最近7天走势,今日出价,今日竞价,BCP56-16批发/采购报价,BCP56-16行情走势销售排行榜,BCP56-16报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BCP56-16

NPNmediumpowertransistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BCP56-16

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat)

Zetex

Zetex Semiconductors

Zetex
BCP56-16

NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS
BCP56-16

NPNSiliconAFTransistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCP56-16

LowpowerNPNTransistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BCP56-16

NPNSiliconAFTransistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCP56-16

80V,1ANPNmediumpowertransistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BCP56-16

NPNMediumPowerTransistor

■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP51,BCP52,BCP53

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BCP56-16

80V,1ANPNmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BCP56-16

80V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BCP56-16

NPNSiliconEpitaxialPlanarTransistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BCP56-16

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BCP56-16

NPNPlastic-EncapsulateTransistors

文件:480.43 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BCP56-16

NPNSiliconAFTransistors

文件:530.52 Kbytes Page:7 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPNLowVce(sat)Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

NPNLowVce(sat)Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

ForAFdriverandoutputstages

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

80V,1APNPmediumpowertransistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1ANPNmediumpowertransistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1ANPNmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1ANPNmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1APNPmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPNSiliconEpitaxialTransistor

TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconEpitaxialTransistor

TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconEpitaxialTransistor

TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

80V,1ANPNmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPNSiliconMediumPowerTransistor

文件:326.88 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

80V,1ANPNmediumpowertransistors

文件:1.25985 Mbytes Page:16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1ANPNmediumpowertransistors

文件:275.24 Kbytes Page:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1ANPNmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •AEC-Q101qual

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

80V,1ANPNmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •Qualifiedacc

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPNMEDIUMPOWERTRANSISTOR

文件:376.99 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

45V/60V/80V,1ANPNmediumpowertransistors

文件:1.40285 Mbytes Page:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

BCP56-16产品属性

  • 类型

    描述

  • 型号

    BCP56-16

  • 功能描述

    两极晶体管 - BJT NPN Medium Voltage

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-3-28 23:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
21+
SOT-223
30000
原装正品价格绝对优势
ON/安森美
22+
SOT223
69
原装现货假一赔十
ON
2016+
SOT-223
5254
只做原装,假一罚十,公司可开17%增值税发票!
Infineon
23+
NA
20000
全新原装假一赔十
三年内
1983
纳立只做原装正品13590203865
NEXPERI
2020+
SOT-223
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NXP
21+
SOT-223
900000
原装正品现货/订货 价格优惠
PHILIPS/飞利浦
22+
SOT-223
100000
代理渠道/只做原装/可含税
Micro Commercial Co
23+
TO-261-4,TO-261AA
30000
晶体管-分立半导体产品-原装正品
ON/安森美
2021/2022+
NA
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品

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