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BCP56-16价格
参考价格:¥0.3700
型号:BCP56-16 品牌:STMicroelectronics 备注:这里有BCP56-16多少钱,2024年最近7天走势,今日出价,今日竞价,BCP56-16批发/采购报价,BCP56-16行情走势销售排行榜,BCP56-16报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BCP56-16 | NPNmediumpowertransistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BCP56-16 | NPNSILICONPLANARMEDIUMPOWERTRANSISTOR FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) | Zetex Zetex Semiconductors | ||
BCP56-16 | NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | ||
BCP56-16 | NPNSiliconAFTransistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BCP56-16 | LowpowerNPNTransistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BCP56-16 | NPNSiliconAFTransistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BCP56-16 | 80V,1ANPNmediumpowertransistors Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BCP56-16 | NPNMediumPowerTransistor ■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP51,BCP52,BCP53 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BCP56-16 | 80V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BCP56-16 | 80V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BCP56-16 | NPNSiliconEpitaxialPlanarTransistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | ||
BCP56-16 | 封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BCP56-16 | NPNPlastic-EncapsulateTransistors 文件:480.43 Kbytes Page:5 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BCP56-16 | NPNSiliconAFTransistors 文件:530.52 Kbytes Page:7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
NPNLowVce(sat)Transistor Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
NPNLowVce(sat)Transistor Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
ForAFdriverandoutputstages NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
80V,1APNPmediumpowertransistors Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1ANPNmediumpowertransistors Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1APNPmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconEpitaxialTransistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconEpitaxialTransistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconEpitaxialTransistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconEpitaxialTransistor NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
80V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
NPNSiliconMediumPowerTransistor 文件:326.88 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
80V,1ANPNmediumpowertransistors 文件:1.25985 Mbytes Page:16 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1ANPNmediumpowertransistors 文件:275.24 Kbytes Page:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •AEC-Q101qual | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
80V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •Qualifiedacc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
NPNMEDIUMPOWERTRANSISTOR 文件:376.99 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | |||
45V/60V/80V,1ANPNmediumpowertransistors 文件:1.40285 Mbytes Page:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |
BCP56-16产品属性
- 类型
描述
- 型号
BCP56-16
- 功能描述
两极晶体管 - BJT NPN Medium Voltage
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+ |
SOT-223 |
30000 |
原装正品价格绝对优势 |
|||
ON/安森美 |
22+ |
SOT223 |
69 |
原装现货假一赔十 |
|||
ON |
2016+ |
SOT-223 |
5254 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Infineon |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
NEXPERI |
2020+ |
SOT-223 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NXP |
21+ |
SOT-223 |
900000 |
原装正品现货/订货 价格优惠 |
|||
PHILIPS/飞利浦 |
22+ |
SOT-223 |
100000 |
代理渠道/只做原装/可含税 |
|||
Micro Commercial Co |
23+ |
TO-261-4,TO-261AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON/安森美 |
2021/2022+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
BCP56-16规格书下载地址
BCP56-16参数引脚图相关
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- BCP56-16E6327
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- BCP56-16.115
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- BCP56.115
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- BCP55TA
- BCP55M
- BCP55-C
- BCP5551
- BCP5516TA
- BCP55-16E6327
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- BCP55-10.115
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- BCP53H
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- BCP52TA
BCP56-16数据表相关新闻
BCP68
BCP68
2020-11-3BCP56-16 NXP
BCP56-16NXP
2020-10-13BCP55-16
BCP55-16
2020-8-18BCP56-16
BCP56-16
2020-4-10BCP54-16原装正品大量现货低价出售
BCP54-16 原装正品大量现货低价出售
2019-2-28BCP54SOT-22345V高端芯片热卖产品质量保证可提供样品
BCP54SOT-22345V高端芯片热卖产品质量保证可提供样品
2019-2-28
DdatasheetPDF页码索引
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