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BCP55晶体管资料
BCP55别名：BCP55三极管、BCP55晶体管、BCP55晶体三极管
BCP55生产厂家：荷兰飞利浦公司
BCP55制作材料：Si-NPN
BCP55性质：射频/高频放大 （HF）_功率放大 （L）
BCP55封装形式：贴片封装
BCP55极限工作电压：60V
BCP55最大电流允许值：1A
BCP55最大工作频率：130MHZ
BCP55引脚数：3
BCP55最大耗散功率：1.5W
BCP55放大倍数：β=250
BCP55图片代号：H-99
BCP55vtest：60
BCP55htest：130000000
- BCP55atest：1
BCP55wtest：1.5
BCP55代换 BCP55用什么型号代替：
BCP55价格
参考价格：￥0.5994
型号：BCP55 品牌：Fairchild 备注：这里有BCP55多少钱，2024年最近7天走势，今日出价，今日竞价，BCP55批发/采购报价，BCP55行情走势销售排行榜，BCP55报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BCP55 | 60 V, 1 A NPN medium power transistors Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  |   |
BCP55 | NPN Medium Power Transistor ■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP51,BCP52,BCP53 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
BCP55 | NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | |
BCP55 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd |  | |
BCP55 | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 |  | |
BCP55 | Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 |  | |
BCP55 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPNSILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeMediumPowerDCApplications ComplementaryBCP51BCP52andBCP53 | CDIL CDIL |  | |
BCP55 | NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
BCP55 | TRANSISTOR (NPN) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | |
BCP55 | 1A , 60V NPN Silicon Medium Power Transistor FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH |  | |
BCP55 | High Collector Current Features Highcollectorcurrent 1.3Wpowerdissipation. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 |  | |
BCP55 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
BCP55 | SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
BCP55 | 60 V, 1 A NPN medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
BCP55 | 60 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BCP55 | 60 V, 1 A NPN medium power transistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BCP55 | SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | |
BCP55 | TRANSISTOR (NPN) FEATURES eForAFdriverandoutputstages eHighcollectorcurrent eLowcollector-emittersaturationvoltage eoComplementarytypes:BCP51...BCP53(PNP) | FUXINSEMIFuxinSemi All Rights Reserved. 富芯森美富芯森美半导体（深圳）有限公司 |  | |
BCP55 | MEDIUM POWER AMPLIFIER MEDIUMPOWERAMPLIFIER ■SILICONEPITAXIALPLANARNPN TRANSISTORS ■MINIATUREPLASTICPACKAGEFOR APPLICATIONINSURFACEMOUNTING CIRCUITS ■GENERALPURPOSEMAINLYINTENDED FORUSEINMEDIUMPOWERINDUSTRIAL APPLICATIONANDFORAUDIOAMPLIFIER OUTPUTSTAGE ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
BCP55 | NPN General Purpose Amplifier NPNGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposemediumpoweramplifiersandswitchingcircuitsrequiringcollectorcurrentsto1.0A.SourcedfromProcess38.SeeBCP54forcharacteristics. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BCP55 | NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCP55 | Surface mount Si-Epitaxial PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 |  | |
BCP55 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | |
BCP55 | For AF driver and output stages 文件：533.22 Kbytes Page：5 Pages | FS First Silicon Co., Ltd |  | |
BCP55 | For AF driver and output stages 文件：1.00096 Mbytes Page：4 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | |
BCP55 | 封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
BCP55 | Surface Mount General Purpose Si-Epi-Planar Transistors 文件：108.22 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
BCP55 | NPN Silicon AF Transistors 文件：530.52 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCP55 | NPN Transistors 文件：945.09 Kbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | | | |
NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | | | |
NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
1A , 60V NPN Silicon Medium Power Transistor FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | | | |
NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN Silicon Epitaxial Planar Transistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 |  | | |
NPN Silicon Medium Power Transistor FEATURES •ForAFDriverandOutputStages •HighCollectorCurrent •LowCollector-EmitterSaturationVoltage | SECOS SeCoS Halbleitertechnologie GmbH | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
Planar Transistor Features Designedforgereralpruposeapplicationrequiringhighbreakdownvoltage. | SECOS SeCoS Halbleitertechnologie GmbH | | | |
NPN Silicon Medium Power Transistor FEATURES •ForAFDriverandOutputStages •HighCollectorCurrent •LowCollector-EmitterSaturationVoltage | SECOS SeCoS Halbleitertechnologie GmbH | | | |
NPN Silicon AF Transistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51M...BCP53M(PNP) | SIEMENS Siemens Ltd | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | |
BCP55产品属性
- 类型
描述
- 型号
BCP55
- 功能描述
两极晶体管 - BJT SOT-223 NPN GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PH |
2020+ |
SOT223 |
150 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
PHILIPS |
23+ |
NA |
8021 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
|||
onsemi |
23+ |
TO-261-4,TO-261AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
NXP |
1436+ |
SOT223 |
30000 |
绝对原装进口现货可开增值税发票 |
|||
NXP/恩智浦 |
23+ |
SOT223 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
NXP |
23+ |
SOT223 |
7750 |
全新原装优势 |
|||
Nexperia/安世 |
21+ |
SOT-223 |
13490 |
十年信誉,只做原装,有挂就有现货! |
|||
NEXPERIA/安世 |
23+ |
SOT223 |
200000 |
有挂就有货,只做原装免费送样-可BOM配单 |
|||
NEXPERIA/安世 |
21+ |
SOT223 |
16000 |
专注NXP/只做原装 |
|||
ON/安森美 |
24+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
BCP55芯片相关品牌
BCP55规格书下载地址
BCP55参数引脚图相关
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- BCP5401
- BCP54/16
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- BCP53T
- BCP53M
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- BCP53H
- BCP5316
- BCP53/16
- BCP53/10
- BCP53
- BCP52TA
- BCP52M
- BCP5216
- BCP52/16
- BCP52/10
- BCP52
- BCP51TA
- BCP51M
- BCP51-C
- BCP51/16
- BCP51/10
- BCP51
- BCP49
- BCP48
- BCP313
- BCP29
- BCP28
- BCP238
- BCP237
- BCP211
BCP55数据表相关新闻
BCP56-16 NXP
BCP56-16NXP
2020-10-13BCP55-16
BCP55-16
2020-8-18BCP56-16
BCP56-16
2020-4-10BCP54-1645V0.5VSOT-223高端芯片热卖产品质量保证可提供样品
原装
2019-3-1BCP54-16原装正品大量现货低价出售
BCP54-16 原装正品大量现货低价出售
2019-2-28BCP54SOT-22345V高端芯片热卖产品质量保证可提供样品
BCP54SOT-22345V高端芯片热卖产品质量保证可提供样品
2019-2-28
DdatasheetPDF页码索引
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