BCP54晶体管资料

  • BCP54别名:BCP54三极管、BCP54晶体管、BCP54晶体三极管

  • BCP54生产厂家:荷兰飞利浦公司

  • BCP54制作材料:Si-NPN

  • BCP54性质:射频/高频放大 (HF)_功率放大 (L)

  • BCP54封装形式:贴片封装

  • BCP54极限工作电压:45V

  • BCP54最大电流允许值:1A

  • BCP54最大工作频率:130MHZ

  • BCP54引脚数:3

  • BCP54最大耗散功率:1.5W

  • BCP54放大倍数:β=250

  • BCP54图片代号:H-99

  • BCP54vtest:45

  • BCP54htest:130000000

  • BCP54atest:1

  • BCP54wtest:1.5

  • BCP54代换 BCP54用什么型号代替

BCP54价格

参考价格:¥0.6257

型号:BCP54 品牌:Fairchild 备注:这里有BCP54多少钱,2024年最近7天走势,今日出价,今日竞价,BCP54批发/采购报价,BCP54行情走势销售排行榜,BCP54报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BCP54

NPN medium power transistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BCP54

NPN General Purpose Amplifier

NPNGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposemediumpoweramplifiersandswitchingcircuitsrequiringcollectorcurrentsto1.2A.SourcedfromProcess38.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BCP54

Surface mount Si-Epitaxial PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
BCP54

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCP54

45 V, 1 A NPN medium power transistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Lowsideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BCP54

NPN Medium Power Transistor

■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP51,BCP52,BCP53

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BCP54

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES
BCP54

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS
BCP54

TRANSISTOR (NPN)

FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
BCP54

Plastic-Encapsulate Transistors

FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
BCP54

High Collector Current

Features Highcollectorcurrent 1.3Wpowerdissipation.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BCP54

SOT-223 Plastic-Encapsulate Transistors

FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BCP54

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BCP54

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BCP54

45 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BCP54

SOT-223 Plastic-Encapsulate Transistors

FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP51...BCP53(PNP)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BCP54

TRANSISTOR (NPN)

FEATURES eForAFdriverandoutputstages eHighcollectorcurrent eLowcollector-emittersaturationvoltage eoComplementarytypes:BCP51...BCP53(PNP)

FUXINSEMIFuxinSemi All Rights Reserved.

富芯森美富芯森美半导体(深圳)有限公司

FUXINSEMI
BCP54

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPNSILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeMediumPowerDCApplications ComplementaryBCP51BCP52andBCP53

CDIL

CDIL

CDIL
BCP54

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCP54

For AF driver and output stages

文件:1.00096 Mbytes Page:4 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
BCP54

NPN Transistors

文件:945.09 Kbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BCP54

For AF driver and output stages

文件:533.22 Kbytes Page:5 Pages

FS

First Silicon Co., Ltd

FS
BCP54

45 V, 1 A NPN medium power transistors

文件:160.55 Kbytes Page:15 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BCP54

45 V, 1 A NPN medium power transistors

文件:299.68 Kbytes Page:22 Pages

EPCOSEPCOS - TDK Electronics

爱普科斯爱普科斯与TDK元件事业部

EPCOS
BCP54

45 V, 1 A NPN medium power transistors

文件:160.55 Kbytes Page:15 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BCP54

NPN Silicon AF Transistors

文件:530.52 Kbytes Page:7 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCP54

Surface Mount General Purpose Si-Epi-Planar Transistors

文件:108.22 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BCP54

NPN General Purpose Amplifier

文件:204.55 Kbytes Page:7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BCP54

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 45V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

45 V, 1 A NPN medium power transistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Lowsideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccording

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

45 V, 1 A NPN medium power transistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Lowsideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN medium power transistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccording

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

•ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51M...BCP53M(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

•ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51M...BCP53M(PNP)

SIEMENS

Siemens Ltd

SIEMENS

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccording

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT223(SC-73)flatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccording

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

BCP54产品属性

  • 类型

    描述

  • 型号

    BCP54

  • 功能描述

    两极晶体管 - BJT SOT-223 NPN GP AMP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-25 14:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP/ON
18+
SOT223
89000
全新原装现货,假一罚十
ON/安森美
23+
N/A
25850
新到现货,只有原装
NEXPERIA/安世
20+
SOT-223
120000
原装正品 可含税交易
NEXPERIA/安世
2021+
SOT223
9000
原装现货,随时欢迎询价
DIODES(美台)
22+
SOT-223
291
QQ询价 绝对原装正品
NEXPERIA/安世
23+
SOT223
60000
只做原装 !全系列供应可长期供货稳定价格优势!
NEXPERIA/安世
21+
SOT-223
50000
原装现货/假一赔十/支持第三方检验
ON/安森美
22+
ORIGINAL
25000
原装现货、假一赔十
nxp
22+
SOT23
960000
只做原装进口现货
INFINEON/英飞凌
22+
SOT-223
4000
只做原装进口 免费送样!!

BCP54芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

BCP54数据表相关新闻