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B140价格
参考价格:¥0.2600
型号:B140 品牌:VISHAY 备注:这里有B140多少钱,2024年最近7天走势,今日出价,今日竞价,B140批发/采购报价,B140行情走势销售排行榜,B140报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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B140 | 1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •LeadFreeFin | DIODESDiodes Incorporated 达尔科技 | ||
B140 | SurfaceMountSchottkyBarrierRectifiers Features: *Lowprofilepackage *Idealforautomatedplacement *GuardRingforovervoltageprotection *Lowforwardvoltagedrop *ComponentinaccordancetoRoHS2002/95/EC | WEITRONWEITRON 威堂電子科技 | ||
B140 | SCHOTTKYBARRIERRECTIFIER REVERSEVOLTAGE:20---60VCURRENT:1.0A FEATURES ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
B140 | SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to200Volts FORWARDCURRENT-1.0Amperes FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequency | CTC ctconline | ||
B140 | 1AMPSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER
| FujiFUJI CORPORATION 株式会社FUJI | ||
B140 | SchottkyBarrierRectifiers REVERSEVOLTAGE:20---60VCURRENT:1.0A Features ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
B140 | SCHOTTKYBARRIERRECTIFIERS 文件:75.89 Kbytes Page:2 Pages | CTC ctconline | ||
B140 | Theevaluationboarddoesnothavereversepolarityprotection 文件:177.32 Kbytes Page:8 Pages | DIODESDiodes Incorporated 达尔科技 | ||
B140 | step-downDC/DCconverterdesignedtodriveLEDswithaconstantcurrent. 文件:175.37 Kbytes Page:8 Pages | DIODESDiodes Incorporated 达尔科技 | ||
B140 | SurfaceMountSchottkyBarrierRectifier 文件:90.14 Kbytes Page:4 Pages | VishayVishay Siliconix 威世科技 | ||
B140 | SurfaceMountSchottkyBarrierRectifiers 文件:144.61 Kbytes Page:3 Pages | WEITRONWEITRON 威堂電子科技 | ||
B140 | SurfaceMountSchottkyBarrierRectifier 文件:111.87 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技 | ||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | |||
5-DotRed/GreenLEDLevelMeter
| SANYOSanyo 三洋三洋电机株式会社 | |||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Forsurfacemountedapplications ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Built-in | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | |||
1.0ASCHOTTKYBARRIERRECTIFIER Features ReducedLowForwardVoltageDrop(VF);BetterEfficiencyand CoolerOperation ReducedHigh-TemperatureReverseLeakage;Increased ReliabilityagainstThermalRunawayFailureinHigh TemperatureOperation Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFr | DIODESDiodes Incorporated 达尔科技 | |||
SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE:20---60VCURRENT:1.0A FEATURES ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | DSK Diode Semiconductor Korea | |||
SchottkyBarrierRectifiers REVERSEVOLTAGE:20---60VCURRENT:1.0A Features ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •LeadFreeFin | DIODESDiodes Incorporated 达尔科技 | |||
SurfaceMountSchottkyBarrierRectifiers REVERSEVOLTAGE20TO100VOLTSFORWARDCURRENT1.0AMPERE Feature: *ForSurfaceMountApplication *Metal-SemiconductorJunctionWithGuardring *EpitaxialConstruction *VeryLowForwardVoltageDrop *HighCurrentCapability *PlasticMeterialHasULFlammabilityClassif | WEITRONWEITRON 威堂電子科技 | |||
SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to200Volts FORWARDCURRENT-1.0Amperes FEATURES •Metal-Semiconductorjunctionwithguardring •Epitaxialconstruction •Lowforwardvoltagedrop •Highcurrentcapability •TheplasticmaterialcarriesULrecognition94V-0 •Foruseinlowvoltage,highfrequency | CTC ctconline | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASCHOTTKYBARRIERRECTIFIER Features ReducedLowForwardVoltageDrop(VF);BetterEfficiencyand CoolerOperation ReducedHigh-TemperatureReverseLeakage;Increased ReliabilityagainstThermalRunawayFailureinHighTemperature Operation Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFr | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASCHOTTKYBARRIERRECTIFIER Features ReducedLowForwardVoltageDrop(VF);BetterEfficiencyand CoolerOperation ReducedHigh-TemperatureReverseLeakage;Increased ReliabilityagainstThermalRunawayFailureinHighTemperature Operation Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFr | DIODESDiodes Incorporated 达尔科技 | |||
ReverseVoltage20to200VForwardCurrent1.0A ReverseVoltage20to200VForwardCurrent1.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardringforover | WEITRONWEITRON 威堂電子科技 | |||
Surface-MountSchottkyBarrierRectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinit | VishayVishay Siliconix 威世科技 | |||
SurfaceMountSchottkyBarrierRectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Materialcategorization:Fordefiniti | VishayVishay Siliconix 威世科技 | |||
ReverseVoltage20to200VForwardCurrent1.0A ReverseVoltage20to200VForwardCurrent1.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardringforover | WEITRONWEITRON 威堂電子科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony) (Note | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony)(Note2 | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony) (Note | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •Ultra-lowLeakageCurrent •GuardRingDieConstructionfor TransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •AvailableinLeadFree/RoHSCompliantVersion (Note3) | DIODESDiodes Incorporated 达尔科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony)(Note2 | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •Ultra-lowLeakageCurrent •GuardRingDieConstructionfor TransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •AvailableinLeadFree/RoHSCompliantVersion (Note3) | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony) (Note | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •LowLeakageCurrent •LowForwardVoltageDrop •LeadFreeByDesign/RoHSCompliant •GreenDevice | DIODESDiodes Incorporated 达尔科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •LowLeakageCurrent •LowForwardVoltageDrop •LeadFreeByDesign/RoHSCompliant •GreenDevice | DIODESDiodes Incorporated 达尔科技 | |||
LowVFSurfaceMountSchottkyBarrierRectifiers Features: *Lowprofilepackage *Idealforautomatedplacement *GuardRingforovervoltageprotection *Lowforwardvoltagedrop *ComponentinaccordancetoRoHS2002/95/EC | WEITRONWEITRON 威堂電子科技 | |||
LOVFSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER VOLTAGE-20TO40VOLTSCURRENT-1.0AMPERES FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Forsurfacemountapplications •Lowprofilepackage •Built-instrainrelief •Metaltosiliconrectifier,majoritycarrierconduction •Lowpowerl | PACELEADERPACELEADER 霈峯霈峯實業有限公司 | |||
SurfaceMountSchottkyBarrierRectifiers Features: *Lowprofilepackage *Idealforautomatedplacement *GuardRingforovervoltageprotection *Lowforwardvoltagedrop *ComponentinaccordancetoRoHS2002/95/EC | WEITRONWEITRON 威堂電子科技 | |||
LowVFSurfaceMountSchottkyBarrierRectifiers Features: *LowSurfaceMountedApplications *Metal-SemiconductorJunctionwithGuardring *EpitaxialConstruction *VeryLowForwardVoltageDrop *HighCurrentCapability *PlasticMaterialHasULFlammabilityClassification94V-0 *ForUseinLowVoltage,HighFrequencyInverters,Free | WEITRONWEITRON 威堂電子科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony)(Note2 | DIODESDiodes Incorporated 达尔科技 | |||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
1ASurfaceMountSchottkyBarrierRectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | ||||
Surface-MountSchottkyBarrierRectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinit | VishayVishay Siliconix 威世科技 | |||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto70APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApp | DIODESDiodes Incorporated 达尔科技 | |||
SurfaceMountSchottkyBarrierDiodes Features: *SurfaceMountedApplications *Metal-SemiconductorJunctionwithGuardring *EpitaxialConstruction *LowLeakageCurrent *HighCurrentCapability *PlasticMaterialHasULFlammabilityClassification94V-0 *ForUsein,HighFrequencyInverters,FreeWheeling,andPolarityPro | WEITRONWEITRON 威堂電子科技 | |||
N-CHANNEL75V-0.0065ohm-120ADPAK/IPAK/TO-220STripFETIIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
1A40VSchottkydiode 文件:311.992 Kbytes Page:2 Pages | ||||
1A40VSchottkydiode 文件:468.224 Kbytes Page:2 Pages |
B140产品属性
- 类型
描述
- 型号
B140
- 制造商
Lite-On Semiconductor Corporation
- 功能描述
DIODE SCHKY 1A 40V DO214AA SMD
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES(美台) |
2020+ |
SMA |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
DIODESINC |
23+ |
原厂原装 |
21260 |
进口原厂原装 |
|||
DIODES |
2016+ |
SMA |
4448 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
22+ |
SOD-323 |
40000 |
原装优质现货订货渠道商 |
|||
21+ |
SOT-23 |
120000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
DIODES/美台 |
2206+ |
SMA |
15670 |
只做原厂原装数量以当天为准,二十年渠道专卖! |
|||
DIODES |
0818+ |
SMB |
847 |
公司原装现货,可来看货! |
|||
DIODES |
2022+ |
SMA |
6800 |
只做原装进口 免费送样 |
|||
DIODES/美台 |
23+ |
SOD323 |
45000 |
热卖优势现货 |
|||
DIODES |
22+ |
SMB |
100000 |
原厂订货价格优势,可开13%的增值税票 |
B140规格书下载地址
B140参数引脚图相关
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- B13A1P
- B138F-12-149
B140数据表相关新闻
B15B-PH-K-S(LF)(SN) 间距2mm 15pin 直插 母座 线到板连接器 JST
B15B-PH-K-S(LF)(SN)
2021-7-23B13B-XASK-1(LF)(SN)XA系列间距2.5mm针座JST全新原装现货
B13B-XASK-1(LF)(SN)JST原装现货
2020-1-31B13B-XASK-1N(LF)(SN)XA系列间距2.5mm针座全新原装JST现货
B13B-XASK-1N(LF)(SN)JST原装现货
2020-1-31B14B-XASK-1N(LF)(SN)XA系列间距2.5mm针座全新原装JST现货
B14B-XASK-1N(LF)(SN)JST原装现货
2020-1-31B14B-XASK-1-A(LF)(SN)XA系列间距2.5mm针座全新原装JST现货
B14B-XASK-1-A(LF)(SN)JST原装现货
2020-1-31B13B-XASK-1(LF)(SN)XA系列间距2.5mm针座JST全新原装现货
B13B-XASK-1(LF)(SN)JST原装现货
2020-1-31
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