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B14晶体管资料
B14别名：B14三极管、B14晶体管、B14晶体三极管
B14生产厂家：
B14制作材料：Si-P+R
B14性质：表面帖装型 （SMD）_差分放大器射极输出 （Dual）
B14封装形式：贴片封装
B14极限工作电压：50V
B14最大电流允许值：0.1A
B14最大工作频率：<1MHZ或未知
B14引脚数：6
B14最大耗散功率：
B14放大倍数：
B14图片代号：H-23
B14vtest：50
B14htest：999900
- B14atest：.1
B14wtest：0
B14代换 B14用什么型号代替：IMB14A,
B14价格
参考价格：￥0.2600
型号：B140 品牌：VISHAY 备注：这里有B14多少钱，2024年最近7天走势，今日出价，今日竞价，B14批发/采购报价，B14行情走势销售排行榜，B14报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
B14 | FEMALE HEADER PROFILE : 4.2mm SIDE-ENTRY TYPE 文件：211.36 Kbytes Page：1 Pages | DBLECTRODB Lectro Inc 迪贝电子迪贝电子（上海）有限公司 |  |   |
B14 | Thermometrics temperature sensor solutions 文件：1.44125 Mbytes Page：16 Pages | AMPHENOLAmphenol Corporation 安费诺集团美国安费诺集团 |  | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •LeadFreeFin | DIODESDiodes Incorporated 达尔科技 |  | | |
Surface Mount Schottky Barrier Rectifiers Features: *Lowprofilepackage *Idealforautomatedplacement *GuardRingforovervoltageprotection *Lowforwardvoltagedrop *ComponentinaccordancetoRoHS2002/95/EC | WEITRONWEITRON 威堂電子科技 |  | | |
SCHOTTKY BARRIER RECTIFIER REVERSEVOLTAGE:20---60VCURRENT:1.0A FEATURES ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | | |
SCHOTTKY BARRIER RECTIFIERS REVERSEVOLTAGE-20to200Volts FORWARDCURRENT-1.0Amperes FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequency | CTC ctconline |  | | |
Schottky Barrier Rectifiers REVERSEVOLTAGE:20---60VCURRENT:1.0A Features ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | | |
1 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
| FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | | | |
5-Dot Red/Green LED Level Meter
| SANYOSanyo 三洋三洋电机株式会社 |  | | |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Forsurfacemountedapplications ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Built-in | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 |  | | |
1.0A SCHOTTKY BARRIER RECTIFIER Features ReducedLowForwardVoltageDrop(VF);BetterEfficiencyand CoolerOperation ReducedHigh-TemperatureReverseLeakage;Increased ReliabilityagainstThermalRunawayFailureinHigh TemperatureOperation Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFr | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •LeadFreeFin | DIODESDiodes Incorporated 达尔科技 | | | |
SCHOTTKY BARRIER RECTIFIERS REVERSEVOLTAGE-20to200Volts FORWARDCURRENT-1.0Amperes FEATURES •Metal-Semiconductorjunctionwithguardring •Epitaxialconstruction •Lowforwardvoltagedrop •Highcurrentcapability •TheplasticmaterialcarriesULrecognition94V-0 •Foruseinlowvoltage,highfrequency | CTC ctconline | | | |
Surface Mount Schottky Barrier Rectifiers REVERSEVOLTAGE20TO100VOLTSFORWARDCURRENT1.0AMPERE Feature: *ForSurfaceMountApplication *Metal-SemiconductorJunctionWithGuardring *EpitaxialConstruction *VeryLowForwardVoltageDrop *HighCurrentCapability *PlasticMeterialHasULFlammabilityClassif | WEITRONWEITRON 威堂電子科技 | | | |
SCHOTTKY BARRIER RECTIFIERS REVERSEVOLTAGE:20---60VCURRENT:1.0A FEATURES ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | DSK Diode Semiconductor Korea |  | | |
Schottky Barrier Rectifiers REVERSEVOLTAGE:20---60VCURRENT:1.0A Features ◇PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapab | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto30APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplication •A | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SCHOTTKY BARRIER RECTIFIER Features ReducedLowForwardVoltageDrop(VF);BetterEfficiencyand CoolerOperation ReducedHigh-TemperatureReverseLeakage;Increased ReliabilityagainstThermalRunawayFailureinHighTemperature Operation Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFr | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SCHOTTKY BARRIER RECTIFIER Features ReducedLowForwardVoltageDrop(VF);BetterEfficiencyand CoolerOperation ReducedHigh-TemperatureReverseLeakage;Increased ReliabilityagainstThermalRunawayFailureinHighTemperature Operation Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFr | DIODESDiodes Incorporated 达尔科技 | | | |
Reverse Voltage 20 to 200V Forward Current 1.0A ReverseVoltage20to200VForwardCurrent1.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardringforover | WEITRONWEITRON 威堂電子科技 | | | |
Surface Mount Schottky Barrier Rectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Materialcategorization:Fordefiniti | VishayVishay Siliconix 威世科技 |  | | |
Surface-Mount Schottky Barrier Rectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinit | VishayVishay Siliconix 威世科技 | | | |
Reverse Voltage 20 to 200V Forward Current 1.0A ReverseVoltage20to200VForwardCurrent1.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardringforover | WEITRONWEITRON 威堂電子科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony)(Note2 | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony) (Note | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony) (Note | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •Ultra-lowLeakageCurrent •GuardRingDieConstructionfor TransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •AvailableinLeadFree/RoHSCompliantVersion (Note3) | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony) (Note | DIODESDiodes Incorporated 达尔科技 | | | |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony)(Note2 | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •Ultra-lowLeakageCurrent •GuardRingDieConstructionfor TransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •AvailableinLeadFree/RoHSCompliantVersion (Note3) | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •LowLeakageCurrent •LowForwardVoltageDrop •LeadFreeByDesign/RoHSCompliant •GreenDevice | DIODESDiodes Incorporated 达尔科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •LowLeakageCurrent •LowForwardVoltageDrop •LeadFreeByDesign/RoHSCompliant •GreenDevice | DIODESDiodes Incorporated 达尔科技 | | | |
Low VF Surface Mount Schottky Barrier Rectifiers Features: *Lowprofilepackage *Idealforautomatedplacement *GuardRingforovervoltageprotection *Lowforwardvoltagedrop *ComponentinaccordancetoRoHS2002/95/EC | WEITRONWEITRON 威堂電子科技 | | | |
LO VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE-20TO40VOLTSCURRENT-1.0AMPERES FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Forsurfacemountapplications •Lowprofilepackage •Built-instrainrelief •Metaltosiliconrectifier,majoritycarrierconduction •Lowpowerl | PACELEADERPACELEADER 霈峯霈峯實業有限公司 |  | | |
Surface Mount Schottky Barrier Rectifiers Features: *Lowprofilepackage *Idealforautomatedplacement *GuardRingforovervoltageprotection *Lowforwardvoltagedrop *ComponentinaccordancetoRoHS2002/95/EC | WEITRONWEITRON 威堂電子科技 | | | |
Low VF Surface Mount Schottky Barrier Rectifiers Features: *LowSurfaceMountedApplications *Metal-SemiconductorJunctionwithGuardring *EpitaxialConstruction *VeryLowForwardVoltageDrop *HighCurrentCapability *PlasticMaterialHasULFlammabilityClassification94V-0 *ForUseinLowVoltage,HighFrequencyInverters,Free | WEITRONWEITRON 威堂電子科技 | | | |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowLeakageCurrent •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomatedAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto45APeak •LeadFree,RoHSCompliant(Note1) •GreenMoldingCompound(NoHalogenandAntimony)(Note2 | DIODESDiodes Incorporated 达尔科技 | | | |
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f |  | | ||
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | | | ||
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | | | ||
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | | | ||
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | | | ||
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | | | ||
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | | | ||
1A Surface Mount Schottky Barrier Rectifiers ■Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-f | | | ||
Surface-Mount Schottky Barrier Rectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinit | VishayVishay Siliconix 威世科技 | | | |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •IdeallySuitedforAutomaticAssembly •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto70APeak •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApp | DIODESDiodes Incorporated 达尔科技 | | | |
Surface Mount Schottky Barrier Diodes Features: *SurfaceMountedApplications *Metal-SemiconductorJunctionwithGuardring *EpitaxialConstruction *LowLeakageCurrent *HighCurrentCapability *PlasticMaterialHasULFlammabilityClassification94V-0 *ForUsein,HighFrequencyInverters,FreeWheeling,andPolarityPro | WEITRONWEITRON 威堂電子科技 | | | |
N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) | DIODESDiodes Incorporated 达尔科技 | | | |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) | DIODESDiodes Incorporated 达尔科技 | | | |
PNP Silicon Low Frequency Transistor Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118 | SECOS SeCoS Halbleitertechnologie GmbH |  | | |
Low Frequency Transistor(-20V,-5A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | | |
Silicon PNP transistor in a TO-252 Plastic Package. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES PowerAmplifierApplications | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
isc Silicon NPN Power Transistor DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PNP EPITAXIAL PLANAR TRANSISTOR Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat) | WEITRONWEITRON 威堂電子科技 | | |
B14产品属性
- 类型
描述
- 型号
B14
- 制造商
Hubbell Premise Wiring
- 功能描述
WALLPLATE 1-G, BLANK, BRS
- 制造商
Hubbell Wiring Device-Kellems
- 功能描述
WALLPLATE 1-G, BLANK, BRS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2021+ |
SMA |
12000 |
勤思达 只做原装正品 现货供应 |
|||
Vishay(威世) |
23+ |
标准封装 |
13048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
DIODES/美台 |
2206+ |
SMA |
15670 |
只做原厂原装数量以当天为准,二十年渠道专卖! |
|||
SANYO |
22+ |
ZIP |
9200 |
绝对原装现货,价格低,欢迎询购! |
|||
BITEK |
21+ |
TO-220F-3 |
60000 |
全新原装 鄙视假货15118075546 |
|||
DIODES |
22+ |
SMB |
100000 |
原厂订货价格优势,可开13%的增值税票 |
|||
DIODES/美台 |
2019+PB |
SMB |
30000 |
原装正品 可含税交易 |
|||
Diodes |
20+ |
SMA |
237156 |
国外现货 1-2周货期 |
|||
DIODES |
22+ |
SMA |
7933 |
全新原装正品 现货 优势供应 |
|||
DIODES |
23+ |
SMA |
6000 |
全新原装现货、诚信经营! |
B14芯片相关品牌
B14规格书下载地址
B14参数引脚图相关
- c2073
- c20001
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- BDM
- bcm2727
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- bc01
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- B145009
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- B144003
- B144000
- B143021
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- B143014
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- B113000
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- B10913
- B10912
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- B10475
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- B103004
- B103003
- B103002
- B103001
- B103000
- B102003
B14数据表相关新闻
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2020-1-31B13B-XASK-1N(LF)(SN)XA系列间距2.5mm针座全新原装JST现货
B13B-XASK-1N(LF)(SN)JST原装现货
2020-1-31B14B-XASK-1N(LF)(SN)XA系列间距2.5mm针座全新原装JST现货
B14B-XASK-1N(LF)(SN)JST原装现货
2020-1-31B14B-XASK-1-A(LF)(SN)XA系列间距2.5mm针座全新原装JST现货
B14B-XASK-1-A(LF)(SN)JST原装现货
2020-1-31B13B-XASK-1(LF)(SN)XA系列间距2.5mm针座JST全新原装现货
B13B-XASK-1(LF)(SN)JST原装现货
2020-1-31
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