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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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APT8030 | PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi | ADPOW Advanced Power Technology | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | |||
POWERMOSV PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
POWERMOSV PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi | ADPOW Advanced Power Technology | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件:62.15 Kbytes Page:4 Pages | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件:62.15 Kbytes Page:4 Pages | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件:63.46 Kbytes Page:4 Pages | ADPOW Advanced Power Technology | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件:63.46 Kbytes Page:4 Pages | ADPOW Advanced Power Technology | |||
LowPower,HighSpeedRail-to-RailInput/OutputAmplifier GENERALDESCRIPTION TheAD8029(single),AD8030(dual),andAD8040(quad)arerail-to-railinputandoutputhighspeedamplifierswithaquiescentcurrentofonly1.3mAperamplifier.Despitetheirlowpowerconsumption,theamplifiersprovideexcellentperformancewith125MHzsmallsignalband | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
Itsacompletetoolkitthatfitsinyourpalm. 文件:1.8415 Mbytes Page:16 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
RadialLeadThermalCutoff 文件:57.59 Kbytes Page:1 Pages | NTE NTE Electronics, Inc | |||
TYPENFEMALETOTYPENMALERADIUSR/AADAPTER 文件:122.81 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
LowPower,HighSpeedRail-to-RailInput/OutputAmplifier 文件:670.88 Kbytes Page:25 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |
APT8030产品属性
- 类型
描述
- 型号
APT8030
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
APT |
1932+ |
TO-264 |
213 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICROSEMI |
2019 |
TO-264 |
19700 |
INFINEON品牌专业原装优质 |
|||
MICROSEMI |
1736+ |
TO264 |
8298 |
只做进口原装正品假一赔十! |
|||
APT |
22+ |
模块 |
3500 |
原装现货,可开13%税票 |
|||
MICROSEMI/美高森美 |
22+ |
TO264 |
6000 |
进口原装 假一罚十 现货 |
|||
MICROSEMI/美高森美 |
0810+ |
TO264 |
880000 |
明嘉莱只做原装正品现货 |
|||
Microsemi/Microsemi Corporatio |
21+ |
TO-3PL |
139 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MICROCHIP(美国微芯) |
23+ |
TO-264 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
APT |
14+ |
模块 |
3000 |
||||
APTMICROSEMI |
23+ |
TO-264L |
90000 |
只做原厂渠道价格优势可提供技术支持 |
APT8030规格书下载地址
APT8030参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- APU3137
- APU3073
- APU3048
- APU3046
- APU3039
- APU3037
- APU2470
- APU1209
- APU1208
- APU1207
- APU1206
- APU1205
- APU1160
- APU1150
- APU0594
- APU0071
- APU0065
- APU0063
- APT8075
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- APT8032LNR
- APT8030LVRG
- APT8030LVR
- APT8030LVFRG
- APT8030LVFR_05
- APT8030LVFR
- APT8030JVR
- APT8030JVFR_05
- APT8030JVFR
- APT8030JNFR
- APT8030JN
- APT8030FN
- APT8030DN
- APT8030CFN
- APT8030B2VRG
- APT8030B2VR
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2019-3-5
DdatasheetPDF页码索引
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