型号 功能描述 生产厂家&企业 LOGO 操作
APT8030

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

POWERMOSV

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERMOSV

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件:62.15 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件:62.15 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件:63.46 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件:63.46 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

LowPower,HighSpeedRail-to-RailInput/OutputAmplifier

GENERALDESCRIPTION TheAD8029(single),AD8030(dual),andAD8040(quad)arerail-to-railinputandoutputhighspeedamplifierswithaquiescentcurrentofonly1.3mAperamplifier.Despitetheirlowpowerconsumption,theamplifiersprovideexcellentperformancewith125MHzsmallsignalband

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

Itsacompletetoolkitthatfitsinyourpalm.

文件:1.8415 Mbytes Page:16 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

RadialLeadThermalCutoff

文件:57.59 Kbytes Page:1 Pages

NTE

NTE Electronics, Inc

NTE

TYPENFEMALETOTYPENMALERADIUSR/AADAPTER

文件:122.81 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

LowPower,HighSpeedRail-to-RailInput/OutputAmplifier

文件:670.88 Kbytes Page:25 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

APT8030产品属性

  • 类型

    描述

  • 型号

    APT8030

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更新时间:2024-3-29 20:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
1932+
TO-264
213
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROSEMI
2019
TO-264
19700
INFINEON品牌专业原装优质
MICROSEMI
1736+
TO264
8298
只做进口原装正品假一赔十!
APT
22+
模块
3500
原装现货,可开13%税票
MICROSEMI/美高森美
22+
TO264
6000
进口原装 假一罚十 现货
MICROSEMI/美高森美
0810+
TO264
880000
明嘉莱只做原装正品现货
Microsemi/Microsemi Corporatio
21+
TO-3PL
139
优势代理渠道,原装正品,可全系列订货开增值税票
MICROCHIP(美国微芯)
23+
TO-264
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
APT
14+
模块
3000
APTMICROSEMI
23+
TO-264L
90000
只做原厂渠道价格优势可提供技术支持

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  • TTELEC
  • XFMRS

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