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位置：首页 > IC中文资料第5488页 > ADR291

ADR291价格

参考价格：￥45.3571

型号：ADR291ERZ 品牌：Analog 备注：这里有ADR291多少钱，2024年最近7天走势，今日出价，今日竞价，ADR291批发/采购报价，ADR291行情走势销售排行榜，ADR291报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ADR291

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

Precision,Micropower,HighCurrentOutputVoltageReference

GENERALDESCRIPTION TheADR3625isalowpower,highprecisionvoltagereferencethat featuresamaximumtemperaturecoefficientof3ppm/°CfortheB gradeinan8-leadMSOP.Capableofsourcingupto 70mA,theADR3625isanexceptionalreplacementtostandard lowdropout(LDO)regulators.

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

Precision,Micropower,HighCurrentOutputVoltageReferences

GENERALDESCRIPTION TheADR3625ADR3630ADR3650arelowpower,highprecision voltagereferencesthatfeatureamaximumtemperaturecoefficient of3ppm/°CfortheBgradeinan8-leadMSOP.Capableof sourcingupto70mA,theADR3625ADR3630ADR3650arean exceptionalreplacementtostandardlo

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

文件：348.48 Kbytes Page：20 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

UltralowNoise,HighAccuracy

文件：993.6 Kbytes Page：32 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291ER

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291ER-REEL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291ER-REEL7

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291ER-RELL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291ERZ

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291ERZ-REEL7

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FR

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FR-REEL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FR-REEL7

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FR-RELL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FRZ

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FRZ-REEL

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FRZ-REEL7

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GBC

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GR

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GR-REEL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GR-REEL7

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GR-RELL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRU-REEL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRU-REEL7

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRU-RELL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRUZ

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRUZ-REEL

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRUZ-REEL7

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRZ

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRZ-REEL

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GRZ-REEL7

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GT9

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GT9-REEL

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291GT9Z

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291_15

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

文件：348.48 Kbytes Page：20 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291ERZ-REEL7

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.08% 8SOIC 集成电路（IC） 电压基准

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291FRZ

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VREF SERIES 0.12% 8SOIC 集成电路（IC） 电压基准

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
291

CylindricalCase,High-CurrentandHigh-VoltageCircuits

Designedforfrequenciesrangingfrom100kHzto3MHz, MicaCapacitorTypes291,292,293and294arewellsuited forhigh-currentandhigh-voltagecircuitslikeradiotransmitters. Castincylindricalcases,thesecapacitorsareelectrically equivalenttoMIL-C-5StylesCM75throughCM93 in

CDE

Cornell Dubilier Electronics

CDE
291

PLUGGABLESERIES

文件：310.48 Kbytes Page：1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子（上海）有限公司

DBLECTRO
291A

SMDAirWoundCoils

文件：66.33 Kbytes Page：2 Pages

FRONTIER

Frontier Electronics

FRONTIER
291A

TapeandReelSpecifications

文件：121.78 Kbytes Page：5 Pages

FRONTIER

Frontier Electronics

FRONTIER
291AEX

EnclosurescanbeFactoryModified(Milling,Drilling,Printingetc.)

文件：331.11 Kbytes Page：1 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

ADR291产品属性

  • 类型

    描述

  • 型号

    ADR291

  • 制造商

    AD

  • 制造商全称

    Analog Devices

  • 功能描述

    Low Noise Micropower Precision Voltage References

ADR291供应商更多...

更新时间：2024-4-19 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
ADR291FR-REEL
ADI
2020+
SOP8
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
ADR291WFRZ
ADI/亚德诺
23+
NA
11360
ADI优势主营型号-原装正品
询价
深圳市宏捷佳电子科技有限公司
ADR291ER
AD
2023+
SOP8
53500
正品,原装现货
询价
深圳好佳好科技有限公司
ADR291GR
ADI
1912+
16850
绝对原装现货
询价
深圳市科恒伟业电子有限公司
ADR291ERZ
ADI
SOP
21+
98
只做原装正品假一赔十!正规渠道订货!
询价
深圳市盈盛科创科技有限公司
ADR291ERZ
ADI
22+
NA
2105
全新原装正品 现货 优势供应
询价
千层芯半导体(深圳)有限公司
ADR291GRZ
ADI
2018+
SOP8
30000
ADI一级代理原装现货假一罚十
询价
深圳市高捷芯城科技有限公司
ADR291WFRZ-R7
ADI(亚德诺)
23+
TSSOP-8
1612
特价优势库存质量保证稳定供货
询价
深圳市得捷芯城科技有限公司
ADR291GR
ADI(亚德诺)
23+
标准封装
9163
我们只是原厂的搬运工
询价
深圳市欧立现代科技有限公司
ADR291ER
AD
22+
SOP8
5660
全新原装现货,欢迎询购!!
询价

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