7091价格

参考价格:¥5.4792

型号:709150001020006 品牌:AVX 备注:这里有7091多少钱,2024年最近7天走势,今日出价,今日竞价,7091批发/采购报价,7091行情走势销售排行榜,7091报价。
型号 功能描述 生产厂家&企业 LOGO 操作
7091

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns
7091

包装:盒 描述:RHEOSTAT HARDWARE KITS 电位计,可变电阻器 配件

OHMITE

OHMITE MANUFACTURING COMPANY

OHMITE

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED36K(4Kx9-BIT)SYNCHRONOUSPIPELINEDDUAL-PORTSRAM

Features ◆ArchitecturebasedonDual-PortSRAMcells –Allowsfullsimultaneousaccessfrombothports ◆High-speedclock-to-dataoutputtimes –Commercial:8/10/12ns(max.) –Industrial:10ns(max.) ◆Low-poweroperation –IDT709149S Active:1500mW(typ.) Standby:75mW(typ.) ◆4KX9

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHSPEED36K(4KX9)SYNCHRONOUSDUAL-PORTRAM

Features ◆High-speedclock-to-dataoutputtimes –Commercial:12ns(max.) ◆Low-poweroperation –IDT70914S Active:850mW(typ.) Standby:50mW(typ.) ◆ArchitecturebasedonDual-PortRAMcells –Allowsfullsimultaneousaccessfrombothports ◆ClockEnablefeature ◆TTL-compatible,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHSPEED36K(4KX9)SYNCHRONOUSDUAL-PORTRAM

Features ◆High-speedclock-to-dataoutputtimes –Commercial:12ns(max.) ◆Low-poweroperation –IDT70914S Active:850mW(typ.) Standby:50mW(typ.) ◆ArchitecturebasedonDual-PortRAMcells –Allowsfullsimultaneousaccessfrombothports ◆ClockEnablefeature ◆TTL-compatible,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHSPEED36K(4KX9)SYNCHRONOUSDUAL-PORTRAM

Features ◆High-speedclock-to-dataoutputtimes –Commercial:12ns(max.) ◆Low-poweroperation –IDT70914S Active:850mW(typ.) Standby:50mW(typ.) ◆ArchitecturebasedonDual-PortRAMcells –Allowsfullsimultaneousaccessfrombothports ◆ClockEnablefeature ◆TTL-compatible,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED16/8Kx9SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:6.5/7.5/9ns(max.) Industrial:7.5ns(max.) ◆Low-poweroperation –IDT709169/59L Active:925mW(typ.) Standby:2.5mW(typ.) ◆Flow-Through

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

Shock-SafeFuseholder,5x20mm,Fingergrip,Rear-Side,NF,IP40/IP67

文件:236.62 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

Shock-SafeFuseholder,5x20mm,Fingergrip,Rear-Side,NF,IP40/IP67

文件:239.75 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

Shock-SafeFuseholder,5x20mm,Fingergrip,Rear-Side,NF,IP40/IP67

文件:236.62 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

包装:散装 描述:FUSE HLDR CART 250V 6.3A PNL MNT 电路保护 保险丝座

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

Shock-SafeFuseholder,5x20mm,Fingergrip,Rear-Side,NF,IP40/IP67

文件:239.75 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

Shock-SafeFuseholder,5x20mm,Fingergrip,horizontalorvertical

文件:276.94 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

Shock-SafeFuseholder,5x20mm,Fingergrip,horizontalorvertical

文件:276.94 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

Shock-SafeFuseholder,5x20mm,Fingergrip,horizontalorvertical

文件:276.94 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

Shock-SafeFuseholder,5x20mm,Fingergrip,horizontalorvertical

文件:276.94 Kbytes Page:2 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NetworkInterfaceDevice

文件:393.64 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

7091产品属性

  • 类型

    描述

  • 型号

    7091

  • 功能描述

    安装硬件 MOUNTING HRDW KIT

  • RoHS

  • 制造商

    Harwin

  • 类型

    SMT Cable Clip

  • 材料

    Phosphor Bronze

  • 长度

    5 mm

  • 电镀

    Tin

更新时间:2024-4-20 9:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Steinel
2022+
7
全新原装 货期两周
AVX(京瓷)
23+
SMD
32589
免费送样,账期支持,原厂直供,没有中间商赚差价
IDT
22+
TQFP80
7992
原装现货
IDT
SSOP
1250
100%原装正品!现货热价热卖!可开17%增值税票!
IDT
21+
SSOP
35200
一级代理/放心采购
AVX
2021+
SMD
100000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
AVX
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
KYOCERA
2339
NA
2505
现货!就到京北通宇商城
IDT
23+
SSOP
7600
专注配单,只做原装进口现货
IDT
23+
QFP
980
全新原装,真实库存

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