型号 功能描述 生产厂家&企业 LOGO 操作
2SK3386

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCiss:Ciss=2100pFTYP. •Built

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3386

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=21mMAX.(VGS=10V,ID=17A) RDS(on)2=36mMAX.(VGS=4.0V,ID=17A) ●LowCiss:Ciss=2100pFTYP. ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK3386

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3386

iscN-ChannelMOSFETTransistor

文件:399.19 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK3386

N-Channel60V(D-S)MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCiss:Ciss=2100pFTYP. •Built

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

文件:242.36 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscN-ChannelMOSFETTransistor

文件:331.65 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelMOSFETusesadvancedtrenchtechnology

文件:887.27 Kbytes Page:4 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

2SK3386产品属性

  • 类型

    描述

  • 型号

    2SK3386

  • 制造商

    KEXIN

  • 制造商全称

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述

    MOS Field Effect Transistor

更新时间:2024-3-29 16:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
TO-252/251
35890
RENESAS/瑞萨
23+
TO-252
33500
全新进口原装现货,假一罚十
NEC
08+(pbfree)
TO-251
8866
RENESAS/瑞萨
TO252
7906200
NEC-日本电气
24+25+/26+27+
TO-252-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
Renesas
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
RENESAS
2020+
TO-251
35490
公司代理品牌,原装现货超低价清仓!
NEC
2021+
6000
NEC
23+
TO-251
7600
全新原装现货
NEC
20+
TO-251
38900
原装优势主营型号-可开原型号增税票

2SK3386芯片相关品牌

  • 3M
  • AVX
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

2SK3386数据表相关新闻

  • 2SMPP-02

    优势渠道

    2023-2-16
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage

    2021-6-24
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P

    2021-6-24
  • 2SK508G-K51-AE3-R

    属性参数值 商品目录结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C时)50mA 漏源电压(Vdss)15V 类型N沟道 最大功率耗散(Ta=25°C)200mW

    2020-11-12
  • 2SK3313

    2SK3313,全新原装当天发货或门市自取0755-82732291.

    2020-3-28
  • 2SK3591-01R

    2SK3591-01R,全新原装当天发货或门市自取0755-82732291.

    2020-3-28