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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3386-Z | SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCiss:Ciss=2100pFTYP. •Built | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SK3386-Z | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCi | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SK3386-Z | iscN-ChannelMOSFETTransistor 文件：331.65 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SK3386-Z | N-ChannelMOSFETusesadvancedtrenchtechnology 文件：887.27 Kbytes Page：4 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCi | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3386isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=21mΩMAX.(VGS=10V,ID=17A) RDS(on)2=36mΩMAX.(VGS=4.0V,ID=17A) •LowCiss:Ciss=2100pFTYP. •Built | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features ●Lowon-resistance RDS(on)1=21mMAX.(VGS=10V,ID=17A) RDS(on)2=36mMAX.(VGS=4.0V,ID=17A) ●LowCiss:Ciss=2100pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
N-Channel60V(D-S)MOSFET 文件：960.09 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：399.19 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SK3386-Z产品属性
- 类型
描述
- 型号
2SK3386-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
DPAK/TO-252 |
1000 |
国产品牌isc,可替代原装 |
|||
RENESAS(瑞萨)/IDT |
23+ |
- |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
NEC |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
23+ |
NA/ |
22800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Renesas |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ROHM |
2017+ |
SOT-252 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
NEC |
22+23+ |
TO252 |
73337 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
08+(pbfree) |
TO-252 |
8866 |
||||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
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2SK3386-Z规格书下载地址
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2SK3386-Z数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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