型号 功能描述 生产厂家&企业 LOGO 操作
2SK3354-Z

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6300pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3354-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) •Low

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3354-Z

iscN-ChannelMOSFETTransistor

文件:401.3 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) •Low

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=6300pFTYP. ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6300pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

iscN-ChannelMOSFETTransistor

文件:333.13 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) •Low

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscN-ChannelMOSFETTransistor

文件:327.15 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3354-Z产品属性

  • 类型

    描述

  • 型号

    2SK3354-Z

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

更新时间:2024-3-19 15:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
NEC
23+
TO-263
35890
RENESAS(瑞萨)/IDT
23+
-
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
NEC
23+
NA
26315
专做原装正品,假一罚百!
DO
23+
TO-263
12300
全新原装真实库存含13点增值税票!
NEC
08+(pbfree)
TO-263
8866
NEC
23+
TO-263
10000
公司只做原装正品
RENESAS/瑞萨
10+
6545
一周左右货期全新进口原装
NEC
1746+
to220
8862
深圳公司现货!特价支持工厂客户!提供样品!

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