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2SK332价格
参考价格:¥1.6352
型号:2SK3320-BL(TE85L,F 品牌:Toshiba 备注:这里有2SK332多少钱,2024年最近7天走势,今日出价,今日竞价,2SK332批发/采购报价,2SK332行情走势销售排行榜,2SK332报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2SK332 | SILICONNCHANNELTRANSISTOR SILICONNCHANNELTRANSISTOR | SANYOSanyo 三洋三洋电机株式会社 | ||
NCHANNELJUNCTIONTYPE(FORLOWNOISEAUDIOAMPLIFIERAPPLICATIONS) ForLowNoiseAudioAmplifierApplications •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType ForLowNoiseAudioAmplifierApplications •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
ForLowNoiseAudioAmplifierApplications ForLowNoiseAudioAmplifierApplications •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType ForLowNoiseAudioAmplifierApplications •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
ForLowNoiseAudioAmplifierApplications ForLowNoiseAudioAmplifierApplications •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NCHANNELJUNCTIONTYPE(GENERALPURPOSEANDIMPEDANCECONVERTERANDCONDENSERMICROPHONEAPPLICATIONS) GENGERALPURPOSEANDIMPEDANCECONVERTERANDCONDENSER MICROPHONEAPPLICATION SmallPackage HighInputImpedance:IGSS=-1nA(Max.)(VGS=-30V) LowNoise:NF=0.5dB(Typ.)(RG=100KΩ,ㄹ=120Hz) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
MOSFieldEffectTransistor Features ●Lowgatecharge QG=15nCTYP.(VDD=450V,VGS=10V,ID=5.5A) ●Gatevoltagerating±30V ●Lowon-stateresistance RDS(on)=2.2ΩMAX.(VGS=10V,ID=2.8A) ●Avalanchecapabilityratings | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3324isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics,andDesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge: | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3324isN-ChannelMOSFETdevicethatfeaturesa Lowgatechargeandexcellentswitchingcharacteristics,and Designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowgatecharge: QG=32nC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3325isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE The2SK3325isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFieldEffectTransistor Features ●Lowgatecharge: ●QG=22nCTYP.(VDD=400V,VGS=10V,ID=10A) Gatevoltagerating:±30V ●Lowon-stateresistance RDS(on)=0.85ΩMAX.(VGS=10V,ID=5.0A) ●Avalanchecapabilityratings | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE The2SK3325isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3325isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3325isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE The2SK3325isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3326isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge: | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3326isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3326BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3326BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNChannelJunctionTypeForLowNoiseAudioAmplifierApplications 文件:589.29 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelJunctionTypeForLowNoiseAudioAmplifierApplications 文件:589.29 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
封装/外壳:5-TSSOP,SC-70-5,SOT-353 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:JFET DUAL N-CH USV 分立半导体产品 晶体管 - JFET | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage | |||
iscN-ChannelMOSFETTransistor 文件:332.78 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:326.81 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:401.11 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:400.99 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:332.45 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:326.49 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:400.78 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:323.22 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2SK332产品属性
- 类型
描述
- 型号
2SK332
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
SILICON N CHANNEL TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2020+ |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
23+ |
N/A |
49500 |
正品授权货源可靠 |
||||
RENESAS(瑞萨)/IDT |
23+ |
- |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
NEC |
05+ |
TO-262/263 |
72000 |
绝对原装现货特价 |
|||
. |
1746+ |
pcs |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
NEC |
TO-220F |
6603 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
23+ |
2800 |
正品原装货价格低qq:2987726803 |
||||
NEC |
22+ |
TO-220F |
40256 |
本公司只做原装进口现货 |
|||
NEC |
23+ |
TO-TO-220F |
35400 |
全新原装真实库存含13点增值税票! |
|||
NEC |
2023+ |
TO-220 |
6895 |
原厂全新正品旗舰店优势现货 |
2SK332规格书下载地址
2SK332参数引脚图相关
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- 5000
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- 3579
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- 2SK3376TT-A
- 2SK3376TK-C
- 2SK3376TK-BK
- 2SK3376-BK
- 2SK3376-A
- 2SK3373
- 2SK3372GUL
- 2SK33720UL
- 2SK33720TL
- 2SK33720SL
- 2SK33720HL
- 2SK337209L
- 2SK3359
- 2SK3358
- 2SK3357
- 2SK3356
- 2SK3355
- 2SK3354
- 2SK3353
- 2SK3352
- 2SK3351
- 2SK3349DNTR
- 2SK3349
- 2SK3348
- 2SK3342
- 2SK334
- 2SK3335
- 2SK3326
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- 2SK3321
- 2SK3320-Y(TE85L,F)
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- 2SK3312
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- 2SK3298
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- 2SK327700L
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- 2SK3230
- 2SK322WR
- 2SK3225(1)-Z-E1
- 2SK321-R
- 2SK3210
- 2SK320200L
- 2SK316-Q
2SK332数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C时)50mA 漏源电压(Vdss)15V 类型N沟道 最大功率耗散(Ta=25°C)200mW
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2SK3591-01R,全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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