2SK332价格

参考价格:¥1.6352

型号:2SK3320-BL(TE85L,F 品牌:Toshiba 备注:这里有2SK332多少钱,2024年最近7天走势,今日出价,今日竞价,2SK332批发/采购报价,2SK332行情走势销售排行榜,2SK332报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK332

SILICONNCHANNELTRANSISTOR

SILICONNCHANNELTRANSISTOR

SANYOSanyo

三洋三洋电机株式会社

SANYO

NCHANNELJUNCTIONTYPE(FORLOWNOISEAUDIOAMPLIFIERAPPLICATIONS)

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ForLowNoiseAudioAmplifierApplications

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ForLowNoiseAudioAmplifierApplications

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NCHANNELJUNCTIONTYPE(GENERALPURPOSEANDIMPEDANCECONVERTERANDCONDENSERMICROPHONEAPPLICATIONS)

GENGERALPURPOSEANDIMPEDANCECONVERTERANDCONDENSER MICROPHONEAPPLICATION SmallPackage HighInputImpedance:IGSS=-1nA(Max.)(VGS=-30V) LowNoise:NF=0.5dB(Typ.)(RG=100KΩ,ㄹ=120Hz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

MOSFieldEffectTransistor

Features ●Lowgatecharge QG=15nCTYP.(VDD=450V,VGS=10V,ID=5.5A) ●Gatevoltagerating±30V ●Lowon-stateresistance RDS(on)=2.2ΩMAX.(VGS=10V,ID=2.8A) ●Avalanchecapabilityratings

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3324isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics,andDesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3324isN-ChannelMOSFETdevicethatfeaturesa Lowgatechargeandexcellentswitchingcharacteristics,and Designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowgatecharge: QG=32nC

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3325isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

The2SK3325isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFieldEffectTransistor

Features ●Lowgatecharge: ●QG=22nCTYP.(VDD=400V,VGS=10V,ID=10A) Gatevoltagerating:±30V ●Lowon-stateresistance RDS(on)=0.85ΩMAX.(VGS=10V,ID=5.0A) ●Avalanchecapabilityratings

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

The2SK3325isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3325isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3325isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

The2SK3325isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3326isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3326isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3326BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3326BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelJunctionTypeForLowNoiseAudioAmplifierApplications

文件:589.29 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelJunctionTypeForLowNoiseAudioAmplifierApplications

文件:589.29 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

封装/外壳:5-TSSOP,SC-70-5,SOT-353 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:JFET DUAL N-CH USV 分立半导体产品 晶体管 - JFET

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

iscN-ChannelMOSFETTransistor

文件:332.78 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:326.81 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:401.11 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:400.99 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:332.45 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:326.49 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:400.78 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:323.22 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK332产品属性

  • 类型

    描述

  • 型号

    2SK332

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    SILICON N CHANNEL TRANSISTOR

更新时间:2024-3-19 10:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2020+
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
23+
N/A
49500
正品授权货源可靠
RENESAS(瑞萨)/IDT
23+
-
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
NEC
05+
TO-262/263
72000
绝对原装现货特价
.
1746+
pcs
8862
深圳公司现货!特价支持工厂客户!提供样品!
NEC
TO-220F
6603
一级代理 原装正品假一罚十价格优势长期供货
NEC
23+
2800
正品原装货价格低qq:2987726803
NEC
22+
TO-220F
40256
本公司只做原装进口现货
NEC
23+
TO-TO-220F
35400
全新原装真实库存含13点增值税票!
NEC
2023+
TO-220
6895
原厂全新正品旗舰店优势现货

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