2SK33

NCHANNELJUNCTIONTYPE(FORAUDIOAMPLIFIER,ANALOGSWITCH,CONSTANTCURRENTANDIMPEDANCECONVERTERAPPLICATIONS)

*
Highbreakdownvoltage:VGDS=−50V *
Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) *
LowRDS(ON):RDS(ON)=320Ω(typ.)(IDSS=5mA) *
Complementaryto2SJ105 *
Smallpackage

MINIPACKAGESERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,SWITCHINGREGULATOR,DC-DCCONVERTERAPPLICATIONS)

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m

SwitchingRegulatorandDC-DCConverterApplications

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SwitchingRegulator,DC-DCConverterApplications

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=11.5Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.4S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmodel:Vth=2.0~4.0V(VDS=10V,ID=1

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge:QG=44nCTYP.(VDD=450V,VGS=10V,ID=7.0A) •Gat

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge: QG=44nCTYP.(VDD=4

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

MOSFieldEffectTransistor

Features Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID=5.0A) Gatevoltagerating±30V Lowon-stateresistance RDS(on)=1.5ΩMAX.(VGS=10V,ID=2.5A) Avalanchecapabilityratings

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

The2SK3306isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter.

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3306isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3306BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3306BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3307isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=14mΩMAX.(VGS=4.0V,ID=35A) •

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3307isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=14mΩMAX.(VGS=4.0V,ID=35A) •LowCiss:Ciss=46

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.48Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.3S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=450V) •Enhancement-mode:Vth=3.0~5.0V(VDS=10V,ID=1mA)

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(PI-MOSV)

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.48Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.3S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=450V) •Enhancementmodel:Vth=3.0to5.0V(VDS=10V,ID=1mA)

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SiliconNChannelMOSTypeChopperRegulator,DC−DCConverterandMotorDriveApplications

ChopperRegulator,DC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=0.9Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=3.5S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ●Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

ChopperRegulator

ChopperRegulatorandDC−DCConverterApplications MotorDriveApplications Fastreverserecoverytime:trr=90ns(typ.) Built-inhigh-speedfree-wheelingdiode Lowdrain−sourceON-resistance:RDS(ON)=0.5Ω(typ.) Highforwardtransferadmittance:|Yfs|=8.5S(typ

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(PI-MOSV)

ChopperRegulatorandDC−DCConverterApplications MotorDriveApplications ●Fastreverserecoverytime:trr=105ns(typ.) ●Built-inhigh-speedfree-wheelingdiode ●Lowdrain−sourceON-resistance:RDS(ON)=0.35Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=9.9S(typ.) ●Low

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

SwitchingRegulatorApplications ●Fastreverserecoverytime:trr=60ns(typ.) ●Built-inhigh-speedfree-wheelingdiode ●Lowdrain−sourceONresistance:RDS(ON)=1.6Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=3.8S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=

SiliconN-channelpowerMOSFET

SiliconN-channelpowerMOSFET Forswitching ■Features •Avalancheenergycapabilityguaranteed •High-speedswitching •LowONresistanceRon •Nosecondarybreakdown

SILICONNCHANNELTRANSISTOR

SILICONNCHANNELTRANSISTOR

NCHANNELJUNCTIONTYPE(FORLOWNOISEAUDIOAMPLIFIERAPPLICATIONS)

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

ForLowNoiseAudioAmplifierApplications

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

ForLowNoiseAudioAmplifierApplications

ForLowNoiseAudioAmplifierApplications ​​​​​​​ •Twodevicesinaultrasupermini(fivepins)package •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5

NCHANNELJUNCTIONTYPE(GENERALPURPOSEANDIMPEDANCECONVERTERANDCONDENSERMICROPHONEAPPLICATIONS)

GENGERALPURPOSEANDIMPEDANCECONVERTERANDCONDENSER MICROPHONEAPPLICATION SmallPackage HighInputImpedance:IGSS=-1nA(Max.)(VGS=-30V) LowNoise:NF=0.5dB(Typ.)(RG=100KΩ,ㄹ=120Hz)

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

MOSFieldEffectTransistor

Features ●Lowgatecharge QG=15nCTYP.(VDD=450V,VGS=10V,ID=5.5A) ●Gatevoltagerating±30V ●Lowon-stateresistance RDS(on)=2.2ΩMAX.(VGS=10V,ID=2.8A) ●Avalanchecapabilityratings

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltage applicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowgatecharge: QG=15

SWITCHINGN-CHANNELPOWERMOSFET

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3322isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ★•Lowgatecharge:QG=15nCTYP.

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3324isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics,andDesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge:

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3324isN-ChannelMOSFETdevicethatfeaturesa Lowgatechargeandexcellentswitchingcharacteristics,and Designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowgatecharge: QG=32nC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3325isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

The2SK3325isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter.

MOSFieldEffectTransistor

Features ●Lowgatecharge: ●QG=22nCTYP.(VDD=400V,VGS=10V,ID=10A) Gatevoltagerating:±30V ●Lowon-stateresistance RDS(on)=0.85ΩMAX.(VGS=10V,ID=5.0A) ●Avalanchecapabilityratings

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3325BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=20nCTYP.(ID=10A,VDD=400V,VGS=10V)