位置:首页 > IC中文资料第12429页 > 2SD66
2SD66晶体管资料
2SD66别名:2SD66三极管、2SD66晶体管、2SD66晶体三极管
2SD66生产厂家:日本索尼公司
2SD66制作材料:Ge-NPN
2SD66性质:低频或音频放大 (LF)_开关管 (S)
2SD66封装形式:直插封装
2SD66极限工作电压:25V
2SD66最大电流允许值:0.1A
2SD66最大工作频率:<1MHZ或未知
2SD66引脚数:3
2SD66最大耗散功率:0.12W
2SD66放大倍数:
2SD66图片代号:C-62
2SD66vtest:25
2SD66htest:999900
- 2SD66atest:.1
2SD66wtest:.12
2SD66代换 2SD66用什么型号代替:AC127,AC176,AC178,2N1302,2SD30,3BX31B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconPNPepitaxialplanertype(Forlow-frequencyandlow-noiseamplification) Forlow-frequencyandlow-noiseamplification Complementaryto2SD661and2SD661A ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboar | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype(Forlow-frequencyandlow-noiseamplification) Forlow-frequencyandlow-noiseamplification ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard. | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype(Forlow-frequencyandlow-noiseamplification) Forlow-frequencyandlow-noiseamplification ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard. | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanertype(Forlow-frequencyandlow-noiseamplification) Forlow-frequencyandlow-noiseamplification Complementaryto2SD661and2SD661A ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboar | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype(Forhighbreakdownvoltagegeneralamplification) Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard. | PanasonicPanasonic Corporation 松下松下电器 | |||
ForHighBreakdownVoltageGeneralAmplification Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard. | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype(Forhighbreakdownvoltagegeneralamplification) Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard. | PanasonicPanasonic Corporation 松下松下电器 | |||
ForHighBreakdownVoltageGeneralAmplification Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard. | PanasonicPanasonic Corporation 松下松下电器 | |||
HIGHPOWERSWITCHINGAPPLICATIONS. FEATURES: -HighDCCurrentGain :hyp-2000(Min.)(VCE3V,Ic=3A) -LowSaturationVoltage :VCE(sat)=1.5V(Max.)(IC-3A) -MonolithicCnstructionwithBuilt-InBase- EmitterShuntResistor. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2SB645 ·Highpowerdissipation APPLICATIONS ·Poweramplifierapplications ·Powerswitchingapplications ·DC-DCconverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2SB645 ·Highpowerdissipation APPLICATIONS ·Poweramplifierapplications ·Powerswitchingapplications ·DC-DCconverters | SAVANTIC Savantic, Inc. | |||
LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A | HitachiHitachi, Ltd. 日立公司 | |||
LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
TO-92MODPlastic-EncapsulateTransistors FEATURES eLowFrequencyPowerAmplifier eComplementaryPairwith2SB647/A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconNPNEpitaxial 1.Lowfrequencypoweramplifier 2.Complementarypairwith2SB647/A | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial 1.Lowfrequencypoweramplifier 2.Complementarypairwith2SB647/A | HitachiHitachi, Ltd. 日立公司 | |||
TO-92MODPlastic-EncapsulateTransistors FEATURES eLowFrequencyPowerAmplifier eComplementaryPairwith2SB647/A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
1A,120VNPNPlasticEncapsulatedTransistor FEATURES •LowFrequencyPowerAmplifier •ComplementaryPairwith2SB647A | SECOS SeCoS Halbleitertechnologie GmbH | |||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforlowfrequencypoweramplifierapplications. | DCCOMDc Components 直流元件直流元件有限公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Capableof0.9WattsofPowerDissipation. •Collector-current1.0A •Collector-baseVoltage120V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Halogenfreeavailableuponrequestby | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Capableof0.9WattsofPowerDissipation. •Collector-current1.0A •Collector-baseVoltage120V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Halogenfreeavailableuponrequestby | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Capableof0.9WattsofPowerDissipation. •Collector-current1.0A •Collector-baseVoltage120V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Halogenfreeavailableuponrequestby | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
TO-92MODPlastic-EncapsulateTransistors FEATURES eLowFrequencyPowerAmplifier eComplementaryPairwith2SB647/A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SB649/A | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
TO-252-2LPlastic-EncapsulateTransistors FEATURES LowFrequencyPowerAmplifierComplementary Pairwith2SB649 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V • | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNTypePlasticEncapsulateTransistors FEATURES PowerdissipationPCM:1mW(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconNPNtransistorinaTO-126PlasticPackage. Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SB649(A). Applications Lowfrequencypoweramplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP) | HitachiHitachi, Ltd. 日立公司 | |||
NPNEpitaxialPlanarTransistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
SiliconNPNEpitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP) | HitachiHitachi, Ltd. 日立公司 | |||
NPNEpitaxialPlanarTransistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. | |||
NPNTypePlasticEncapsulateTransistors FEATURES PowerdissipationPCM:1mW(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconNPNtransistorinaTO-126PlasticPackage Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SB649(A). Applications Lowfrequencypoweramplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V • | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SB649/A | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
NPNSILICONTRANSISTOR Themainpurpose Forlow-frequencypoweramplification. | HuashanHuashan Electronic Devices Co 华汕电子器件 | |||
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V • | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V • | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
BIPOLARPOWERGENERALPURPOSETRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |
2SD66产品属性
- 类型
描述
- 型号
2SD66
- 制造商
PANASONIC
- 制造商全称
Panasonic Semiconductor
- 功能描述
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Panasonic |
1822+ |
TO-92 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
进口原装 |
23+ |
TO-92L |
1009 |
优势库存 |
|||
HIT |
2018+ |
TO-92L |
20000 |
一级代理原装现货假一罚十 |
|||
Panasonic |
2017+ |
TO-92 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
PANASONIC/松下 |
2048+ |
TO-92 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
TOSHIBA/东芝 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
HITACHI/日立 |
23+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
PANASONIC/松下 |
23+ |
TO-92L |
90000 |
原装原盘 |
|||
长电 |
22+23+ |
TO-92M |
23804 |
绝对原装正品全新进口深圳现货 |
|||
MAT |
05+ |
原厂原装 |
43751 |
只做全新原装真实现货供应 |
2SD66规格书下载地址
2SD66参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SD677
- 2SD676(A)
- 2SD675(A)
- 2SD675
- 2SD674(A)
- 2SD673A
- 2SD673(A)
- 2SD673
- 2SD672
- 2SD671
- 2SD670(H)
- 2SD670
- 2SD67
- 2SD669D
- 2SD669C
- 2SD669B
- 2SD669A
- 2SD669(A)
- 2SD669
- 2SD668(A)
- 2SD667L
- 2SD667A
- 2SD667(A)
- 2SD667
- 2SD666A
- 2SD666(A)
- 2SD666
- 2SD665
- 2SD664
- 2SD663
- 2SD662B
- 2SD662
- 2SD661A
- 2SD661
- 2SD660
- 2SD658
- 2SD657
- 2SD656
- 2SD655
- 2SD654
- 2SD652
- 2SD651(H)
- 2SD651
- 2SD650(H)
- 2SD650
- 2SD65
- 2SD649
- 2SD648A
- 2SD648(A)
- 2SD647A
- 2SD647(A)
- 2SD646(A)
- 2SD645
- 2SD644
- 2SD643
- 2SD642
- 2SD641
- 2SD640
- 2SD639
- 2SD638
- 2SD637
- 2SD635
- 2SD634
- 2SD633
- 2SD632
- 2SD628
- 2SD627
- 2SD621
2SD66数据表相关新闻
2SD667L-TO92NLB-C-TG_UTC代理商
2SD667L-TO92NLB-C-TG_UTC代理商
2023-3-172SD1898G-SOT89R-Q-TG_UTC代理商
2SD1898G-SOT89R-Q-TG_UTC代理商
2023-2-232SD1857L-TO92NLB-R-TG_UTC代理商
2SD1857L-TO92NLB-R-TG_UTC代理商
2023-2-162SD669AL-TO126K-D-TG_UTC代理商
2SD669AL-TO126K-D-TG_UTC代理商
2023-2-132SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SD1859TV2R中文资料
2SD1859TV2R中文资料
2019-2-15
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80