2SD60晶体管资料

  • 2SD60别名:2SD60三极管、2SD60晶体管、2SD60晶体三极管

  • 2SD60生产厂家:日本三菱公司

  • 2SD60制作材料:Si-NPN

  • 2SD60性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD60封装形式:直插封装

  • 2SD60极限工作电压:150V

  • 2SD60最大电流允许值:6A

  • 2SD60最大工作频率:<1MHZ或未知

  • 2SD60引脚数:2

  • 2SD60最大耗散功率:50W

  • 2SD60放大倍数

  • 2SD60图片代号:E-44

  • 2SD60vtest:150

  • 2SD60htest:999900

  • 2SD60atest:6

  • 2SD60wtest:50

  • 2SD60代换 2SD60用什么型号代替:BD245D,BDX11,BDY19,BDY74,2N3442,2N3773,2SD551,2SD732,3DD62E,

型号 功能描述 生产厂家&企业 LOGO 操作

100V/120V,1ALow-FrequencyPowerAmpApplications

1.HighbreakdownvoltageVCEO100/120V,Highcurrent1A. 2.Lowsaturationvoltage,excellenthFElinearity.

SANYOSanyo

三洋三洋电机株式会社

SANYO

iscSiliconNPNPowerTransistor

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerAmplifierApplications

100V/120V,1ALow-FrequencyPowerAmplifierApplications Features ·HighbreakdownvoltageVCEO100/120V,Highcurrent1A. ·Lowsaturationvoltage,excellenthFElinearity.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PowerAmplifierApplications

100V/120V,1ALow-FrequencyPowerAmplifierApplications Features ·HighbreakdownvoltageVCEO100/120V,Highcurrent1A. ·Lowsaturationvoltage,excellenthFElinearity.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

100V/120V,1ALow-FrequencyPowerAmpApplications

1.HighbreakdownvoltageVCEO100/120V,Highcurrent1A. 2.Lowsaturationvoltage,excellenthFElinearity.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

NPNPlastic-EncapsulateTransistor

FEATURES Powerdissipation PCM:0.2W(TAMB=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:60V OperatingandstoragejunctiontemperaturerangeTJ,TSTG:-55℃to+150℃

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SiliconNPNepitaxialplanertype

SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB0709A(2SB709A) ■Features •HighfowardcurrenttransferratiohFE •LowcollectortoemittersaturationvoltageVCE(sat) •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthrough

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanertype

ForgeneralamplificationComplementaryto2SB0709A(2SB709A) ■Features •HighfowardcurrenttransferratiohFE •LowcollectortoemittersaturationvoltageVCE(sat) •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazine

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SOT-23Plastic-EncapsulateTransistors

FEATURE HighhFE LowVCE(sat) Forgeneralamplification Complementaryto2SB709A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=50V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.3V(Max)@IC=0.1A APPLICATIONS ·SwitchingRegulators ·Converters ·PowerAmplifiers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Forgeneralamplification ■Features •Twoelementsincorporatedintoonepackage(Base-coupledtransistors) •Reductionofthemountingareaandassemblycostbyonehalf

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNDIFFUSEDJUNCTIONMESA

2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiNPNTripleDiffusedJunctionMesa

PanasonicPanasonic Corporation

松下松下电器

Panasonic

NPNPlastic-EncapsulateTransistor

FEATURE •LowcollectortoemittersaturationvoltageVCE(sat)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SiliconNPNEpitaxialPlanarType

Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconNPNepitaxialplanertype

Forgeneralamplification Complementaryto2SB710and2SB710A Features 1.LowcollectortoemittersaturationvoltageVCE(sat). 2.Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

TRANSISTOR(NPN)

FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

SOT-23Plastic-EncapsulateTransistors

FEATURES LowCollectortoEmitterSaturationVoltage MiniTypePackage

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SB710(A)。 Applications Generalpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SB710(A)。 Applications Generalpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

SiliconEpitaxialPlanarTransistor

FEATURES ●Complementaryto2SB710APNPTransistor ●LowcollectortoemittersaturationvoltageVCE(sat) APPLICATIONS ●Generalpurposeamplifierapplications

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SOT-23Plastic-EncapsulateTransistors

FEATURES LowCollectortoEmitterSaturationVoltage MiniTypePackage

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconNPNEpitaxialPlanarType

Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconNPNepitaxialplanertype

Forgeneralamplification Complementaryto2SB710and2SB710A Features 1.LowcollectortoemittersaturationvoltageVCE(sat). 2.Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

TRANSISTOR(NPN)

FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

NPNPlastic-EncapsulateTransistor

FEATURE •LowcollectortoemittersaturationvoltageVCE(sat)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SiNPNTripleDiffusedJunctionMesa

PanasonicPanasonic Corporation

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=160V(Min) •ComplementtoType2SB628 APPLICATIONS •Designedforaudiofrequencypoweramplifierandlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

100V/120V,1ALow-FrequencyPowerAmplifierApplications

文件:126.37 Kbytes Page:4 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

100V/120V,1ALow-FrequencyPowerAmplifierApplications

文件:126.37 Kbytes Page:4 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNtransistorinaTO-126FPlasticPackage.

文件:437.8 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNtransistorinaSOT-23PlasticPackage

文件:803.33 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

NPNPlastic-EncapsulateTransistor

文件:58.7 Kbytes Page:1 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SiliconNPNEpitaxialPlanerType

文件:38.05 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNPlastic-EncapsulateTransistor

文件:58.7 Kbytes Page:1 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

2SD60产品属性

  • 类型

    描述

  • 型号

    2SD60

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    100V/120V, 1A Low-Frequency Power Amp Applications

更新时间:2024-4-20 10:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Panasonic
SOT23
3000
正品原装--自家现货-实单可谈
PANASONIC/松下
20+
SOT-23
120000
原装正品 可含税交易
PANASONIC/松下
2021+
SOT-23
30000
PANASONIC
21+
SOT-23
9866
CJ/长电
23+
SOT23
15000
正品原装货价格低qq:2987726803
CJ长电/长晶
23+
SOT-23
6000
主营原装长电长晶//样品有售,只做原装
PANASONIC/松下
23+
SOT-23
50000
全新原装正品现货,支持订货
PANASONIC/松下
ST233
7906200
PANASONIC
21+
ST23-3
8888888
原装正品现货/订货 价格优惠可开票
PANASONIC/松下
2023+
SOT-23
2900
十五年行业诚信经营,专注全新正品

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  • OHMITE
  • RCD
  • spansion
  • TOKEN
  • VBSEMI

2SD60数据表相关新闻