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位置：首页 > IC中文资料第12873页 > 2SD21

2SD21晶体管资料

  • 2SD21别名：2SD21三极管、2SD21晶体管、2SD21晶体三极管

  • 2SD21生产厂家：日本日电公司

  • 2SD21制作材料：Ge-NPN

  • 2SD21性质：低频或音频放大 （LF）_TR_输出极 （E）

  • 2SD21封装形式：直插封装

  • 2SD21极限工作电压：25V

  • 2SD21最大电流允许值：0.3A

  • 2SD21最大工作频率：<1MHZ或未知

  • 2SD21引脚数：3

  • 2SD21最大耗散功率：0.15W

  • 2SD21放大倍数：β=72

  • 2SD21图片代号：D-9

  • 2SD21vtest：25

  • 2SD21htest：999900

  • 2SD21atest：.3

  • 2SD21wtest：.15

  • 2SD21代换 2SD21用什么型号代替：AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,

2SD21价格

参考价格：￥0.3857

型号：2SD2114KT146V 品牌：Rohm 备注：这里有2SD21多少钱，2024年最近7天走势，今日出价，今日竞价，2SD21批发/采购报价，2SD21行情走势销售排行榜，2SD21报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SD2100

CompactMotorDriverApplications???

Features •Lowsaturationvoltage. •Containsdiodebetweencollectorandemitter. •Containsbiasresistancebetweenbaseandemitter. •Largecurrentcapacity. •Small-sizedpackagemakingiteasytoprovidehigh density,small-sizedhybridICs.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD2101

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2101

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •DARLINGTON APPLICATIONS •Lowfrequencypoweramplifier

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD2101

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •DARLINGTON APPLICATIONS •Lowfrequencypoweramplifier

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SD2101

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •DARLINGTON APPLICATIONS •Lowfrequencypoweramplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2101

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2102

SILICONNPNTRIPLEDIFFUSEDLOWFREQUENCYPOWERAMFPLIFIER

D2102Hitachi 2SD2102DatasheetPDF

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2103

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2104

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2104

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) •Collector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=4A •HighDCCurrentGain :hFE=1000(Min)@IC=4A,VCE=3V APPLICATIONS •Designedforlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2105

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=5A •HighDCCurrentGain:hFE=1000(Min)@IC=5A,VCE=3V APPLICATIONS •Designedforlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2106

iscSiliconNPNDarlingtonPowerTransistor

SiliconNPNDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·Collector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=3A ·HighDCCurrentGain :hFE=1000(Min)@IC=3A,VCE=3V APPLICATIONS ·Design

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2106

SiliconNPNEpitaxial

SiliconNPNEpitaxial Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2106

SiliconNPNEpitaxial

SiliconNPNEpitaxial Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2107

SiliconNPNTripleDiffused

Applications Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2108

SILICONNPNTRIPLEDIFFUSEDLOWFREQUENCYPOWERAMPLIFIER

SILICONNPNTRIPLEDIFFUSED LOWFREQUENCYPOWERAMPLIFIER

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2108

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=4A •HighDCCurrentGain:hFE=1000(Min)@IC=4A,VCE=3V APPLICATIONS •Designedforlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD211

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Largecurrentcapability ·Wideareaofsafeoperation APPLICATIONS ·Forpoweramplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD211

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Largecurrentcapability ·Wideareaofsafeoperation APPLICATIONS ·Forpoweramplifierandswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD2110

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=80V(Min) •Collector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=2A •HighDCCurrentGain :hFE=1000(Min)@IC=2A,VCE=3V APPLICATIONS •Designedforlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2111

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) ·Collector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=1.5A ·HighDCCurrentGain:hFE=1000(Min)@IC=1.5A,VCE=3V APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2112

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) •Collector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=3A •HighDCCurrentGain :hFE=1000(Min)@IC=3A,VCE=3V APPLICATIONS •Designedforlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2113

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) ·Collector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=1.5A ·HighDCCurrentGain:hFE=1000(Min)@IC=1.5A,VCE=3V APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD2114

NPNPlasticEncapsulatedTransistor

FEATURE •HighDCCurrentGain. •HighEmitter-BaseVoltage.VEBO=12V(Min.)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD2114

TRANSISTOR(NPN)

FEATURES •HighDCcurrentgain. •Highemitter-basevoltage. •LowVCE(sat).

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SD2114

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES •HighDCcurrentgain. •Highemitter-basevoltage. •LowVCE(sat).

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SD2114K

PowerTransistor

Features HighDCcurrentgain. Highemitter-basevoltage. LowVCE(sat).

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.)(IC/IB=500mA/20mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114KS

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114KT146V

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.)(IC/IB=500mA/20mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114KT146W

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.)(IC/IB=500mA/20mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114KU

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114KV

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2114KW

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2115

PowerBipolarTransistors

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
2SD2115

SiliconNPNEpitaxialPlanar(Lowfrequencypoweramplifier)

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2115

SiliconNPNEpitaxialPlanar

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2115L

SiliconNPNEpitaxialPlanar(Lowfrequencypoweramplifier)

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2115L

SiliconNPNEpitaxialPlanar

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2115S

SiliconNPNEpitaxial

Features ●Lowfrequencypoweramplifier.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD2115S

SiliconNPNEpitaxialPlanar

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2115S

SiliconNPNEpitaxialPlanar(Lowfrequencypoweramplifier)

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2116

GeneralDriverApplications???????

GeneralDriverApplications Features •Darlingtonconnection. •HighDCcurrentgain. •Largecurrentcapacity,wideASO.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD2117

GeneralDriverApplications?????????

GeneralDriverApplications Features •Darlingtonconnection. •HighDCcurrentgain. •Largecurrentcapacity,wideASO.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD2118

LowVCE(sat)Transistor(Strobeflash)

Features 1)LowVCE(sat). VCE(sat)=0.25V(Typ.) (IC/IB=4A/0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe 2SB1386/2SB1412/2SB1326/2SB1436. Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2118

NPNSiliconGeneralPurposeTransistor

FEATURES LowVCE(sat).VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) ExcellentDCCurrentGainCharacteristics

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD2118

LowVCE(sat)Transistor

Features LowVCE(sat). ExcellentDCcurrentgaincharacteristics. NPNsilicontransistor.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD2118TLQ

LowVCE(sat)Transistor(Strobeflash)

Features 1)LowVCE(sat). VCE(sat)=0.25V(Typ.) (IC/IB=4A/0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe 2SB1386/2SB1412/2SB1326/2SB1436. Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2118TLR

LowVCE(sat)Transistor(Strobeflash)

Features 1)LowVCE(sat). VCE(sat)=0.25V(Typ.) (IC/IB=4A/0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe 2SB1386/2SB1412/2SB1326/2SB1436. Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD2120

GeneralDriverApplications?????????

GeneralDriverApplications *Darlingtonconnection(Containsbiasresistance,damperdiode) *HighDCcurrentgain *LessdependenceofDCcurrentgainontemperature

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD2121

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB1407(L)/(S)

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2121

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB1407(L)/(S)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2121L

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB1407(L)/(S)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2121L

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB1407(L)/(S)

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2121S

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB1407(L)/(S)

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD2121S

SiliconNPNEpitaxial

Features Lowfrequencypoweramplifier.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD2121S

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB1407(L)/(S)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD2122

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB1409(L)/(S)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SD21产品属性

  • 类型

    描述

  • 型号

    2SD21

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    Compact Motor Driver Applications

2SD21供应商更多...

更新时间：2024-4-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
2SD2178
PANASONIC/松下
22+
MT-3-A1
100000
代理渠道/只做原装/可含税
询价
深圳市富芯乐电子科技有限公司
2SD2178
PANASONIC
22+
NA
5100
询价
深圳市科恒伟业电子有限公司
2SD218
NEC
1738+
TO-3
8529
科恒伟业!只做原装正品,假一赔十!
询价
深圳兆威电子有限公司
2SD2177-R
PANASONIC/松下
23+
TO-92F
90000
原装原盘
询价
中天科工半导体（深圳）有限公司
2SD218
NEC
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
深圳市艾宇欣科技有限公司
2SD21840RA
Panasonic
20+
N/A
899
加我qq或微信，了解更多详细信息,体验一站式购物
询价
深圳市佳鑫美电子科技有限公司
2SD2185
PANASONIC
22+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
询价
深圳市特顺芯科技有限公司
2SD2177A0A
Panasonic-SSG
07+/08+
MT-2
7500
询价
深圳市惊羽科技有限公司
2SD21840RA
PANASONIC-松下
24+25+/26+27+
MT-2-A1
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市博浩通科技有限公司
2SD2177A0A
PANASONIC
23+
MT-2
7750
全新原装优势
询价

2SD21芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

2SD21规格书下载地址

2SD21参数引脚图相关

2SD21数据表相关新闻

DdatasheetPDF页码索引

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