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位置：首页 > IC中文资料第391页 > 2SD19

2SD19晶体管资料

  • 2SD19别名：2SD19三极管、2SD19晶体管、2SD19晶体三极管

  • 2SD19生产厂家：日本日电公司

  • 2SD19制作材料：Ge-NPN

  • 2SD19性质：低频或音频放大 （LF）_TR_输出极 （E）

  • 2SD19封装形式：直插封装

  • 2SD19极限工作电压：25V

  • 2SD19最大电流允许值：0.3A

  • 2SD19最大工作频率：<1MHZ或未知

  • 2SD19引脚数：3

  • 2SD19最大耗散功率：0.15W

  • 2SD19放大倍数：β=31

  • 2SD19图片代号：D-9

  • 2SD19vtest：25

  • 2SD19htest：999900

  • 2SD19atest：.3

  • 2SD19wtest：.15

  • 2SD19代换 2SD19用什么型号代替：AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,

2SD19价格

参考价格：￥1.8185

型号：2SD1918TLQ 品牌：Rohm 备注：这里有2SD19多少钱，2024年最近7天走势，今日出价，今日竞价，2SD19批发/采购报价，2SD19行情走势销售排行榜，2SD19报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SD1902

AFPowerAmpApplications

Features •Suitableforsetswhoseheighitisrestricted. •WideASO(adoptionofMBITprocess). •Highreliability.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1903

30V/8AHigh-CurrentSwitchingApplications

Features 1.Suitableforsetswhoseheightisrestricted 2.Lowcollectortoemittersaturationvoltage 3.Largecurrentcapacity

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1904

High-CurrentSwitchingApplications

High-CurrentSwitchingApplicatons Features •Suitableforsetswhoseheightisrestricted. •Lowcollectortoemittersaturationvoltage. Applications •Suitableforrelaydrivers,high-speedinverters, converters,andothergeneralhigh-currentswitching applications.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1905

High-CurrentSwitchingApplications

Features •Suitableforsetswhoseheightisrestricted. •Lowcollectortoemittersaturationvoltage. •WideASOandhighlyresistanttobreakdown. Applications •Suitableforrelaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchingapplications.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1906

High-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features ·Suitableforsetswhoseheightisrestricted. ·Lowcollectortoemittersaturationvoltage. ·Largecurrentcapacity. Applications ·Suitableforrelaydrivers,high-speedinverters,converters,andothergeneralhigh-currentsw

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1907

High-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features ·Suitableforsetswhoseheightisrestricted. ·Lowcollectortoemittersaturationvoltage. ·Largecurrentcapacity. Applications ·Suitableforrelaydrivers,high-speedinverters,converters,andothergeneralhigh-currentsw

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1908

CRTDisplayHorizontalDeflectionOutputApplications

CRTDisplayHorizontalDeflectionOutputApplications Features •Fastswitchingspeed. •Especiallysuitedforuseinhigh-definitionCRTdisplay:VCC=6to12V. •WideASOandhighlyresistanttobreakdown.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1910

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFMpackage •Highbreakdownvoltage •Highspeedswitching •Built-indamperdiode APPLICATIONS •ForuseinTVhorizontaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1910

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFMpackage •Highbreakdownvoltage •Highspeedswitching •Built-indamperdiode APPLICATIONS •ForuseinTVhorizontaloutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1910

SiliconDiffusedPowerTransistor(GENERALDESCRIPTION)

GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticenvelopewithintegratedefficiencydiode,primarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SD1911

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PFMpackage ·Highbreakdownvoltage ·Highspeedswitching ·Built-indamperdiode APPLICATIONS ·ForuseinTVhorizontaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1911

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Highbreakdownvoltage ·Highspeedswitching ·Built-indamperdiode APPLICATIONS ·ForuseinTVhorizontaloutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1911

SiliconDiffusedPowerTransistor(GENERALDESCRIPTION)

GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticenvelopewithintegratedefficiencydiode,primarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SD1912

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·WideAreaofSafeOperation ·LowCollectorSaturationVoltage APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1913

60V/3ALow-FrequencyPowerAmplifierApplications

60V/3ALow-FrequencyPowerAmplifierApplications Applications •Generalpoweramplifier. Features •WideASO(AdoptionofMBITprocess). •Lowsaturationvoltage. •Highreliability. •Highbreakdownvoltage. •Micalesspackagefacilitatingmounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1913

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SB1274 ·Highreliability. ·Highbreakdownvoltage ·Lowsaturationvoltage. ·Wideareaofsafeoperation APPLICATIONS ·60V/3Alow-frequencypoweramplifier ·Generalpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1913

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SB1274 ·Highreliability. ·Highbreakdownvoltage ·Lowsaturationvoltage. ·Wideareaofsafeoperation APPLICATIONS ·60V/3Alow-frequencypoweramplifier ·Generalpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1914

NPNEPITAXIALPLANARSILICONDARLINGTONTRANSISTORDRIVERAPPLICATIONS

DriverApplications Features •Darlingtonconnection •HighDCcurrentgain Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1918

POWERTRANSISTOR

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1918

PowerTransistor(160V,1.5A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1918

SiliconNPNEpitaxial

■Features ●Highbreakdownvoltage. ●Lowcollectoroutputcapacitance. ●Hightransitionfrequency ●Complementaryto2SB1275

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1918TLQ

PowerTransistor(160V,1.5A)

Features 1)Highbreakdownvoltage.(BVCEO=160V) 2)Lowcollectoroutputcapacitance.(Typ.20pFatVCB=10V) 3)Hightransitionfrequency.(fT=80MHZ) 4)Complementsthe2SB1275.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1919

MediumPowerTransistor(32V,2A)

FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1922

SiliconNPNEpitaxial

-CollectortobasevoltageVCBO:25V -CollectortoemittervoltageVCEO:25V -EmittertobasevoltageVEBO:6V

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1922

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1928

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=4A •HighDCCurrentGain:hFE=2000(Min)@IC=4A APPLICATIONS •Designedforaudiofrequencypoweramplifierandlowspeedswitchingindustrialuse.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1932

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=3V,IC=2A) APPLICATIONS •Designedforpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1932

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1933

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1933

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·DARLINGTON ·Complementtotype2SB1342 ·HighDCcurrentgain APPLICATIONS ·Lowfrequencypoweramplification

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1933

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·DARLINGTON ·Complementtotype2SB1342 ·HighDCcurrentgain APPLICATIONS ·Lowfrequencypoweramplification

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1933

PowerTransistor(-80V,-4A)

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1934

SiliconNPNepitaxialplanertype(Forlow-frequencypoweramplification)

SiliconNPNepitaxialplanartype Forlow-frequencypoweramplification Forstroboscope ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Satisfactoryoperationperformancesathighefficiencywiththelowvoltagepowersupply. •Allowingsupplywiththeradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD1935

Low-FrequencyGeneral-PurposeAmpApplications???

Low-FrequencyGeneral-PurposeAmplifierApplications Features •Largecurrentcapacity. •Lowcollectortoemittersaturationvoltage. •Verysmall-sizedpackagepermittingsetstobemadesmallerandslimer. Applications •AFpoweramplifier,medium-speedswitching,small-sizedmo

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1935

NPNEpitaxialPlanarSiliconTransistors

Features ●Largecurrentcapacity. ●Lowcollectortoemittersaturationvoltage. ●Verysmall-sizedpackagepermittingsetstobemade smallerandslimer.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1936

AFAmpApplications

AFAmplifierApplications Features •Largecurrentcapacity. •Lowcollectortoemittersaturationvoltage. •WideASO. Applications •AFpoweramplifier,medium-speedswitching,small-sizedmotordrivers

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1938

SiliconNPNepitaxialplanartype

Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features •LowONresistanceRon •HighforwardcurrenttransferratiohFE •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD1938F

SiliconNPNepitaxialplanartype

Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features •LowONresistanceRon •HighforwardcurrenttransferratiohFE •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD1939

NPNSILICONDARLINGTONTRANSISTOR

DESCRIPTION The2SD1939isadarlingtontransistorincludingadumperdiodeatE-C. Itissuitableforgeneraldrivinguse,suchashammer,solenoid,lampormotor.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SD1940

High-VoltageSwitching,AF25to30WOutputApplications

85V/6A,AF25to30WOutputApplications Features •Micalesspackagefacilitatingmounting. •WideASO.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1940

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Wideareaofsafeoperation APPLICATIONS •85V/6A,AF25to30Woutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1940

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Wideareaofsafeoperation APPLICATIONS •85V/6A,AF25to30Woutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1941

SiliconNPNPowerTransistors

DESCRIPTION WithTO-3PFMpackage ·Highvoltage,highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·ColorTVhorizontaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1941

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Highvoltage,highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·ColorTVhorizontaloutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1943

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1944

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1944

High-currentgainPowerTransistor(-60V,-3A)

2SB1639(-60V,-3A) 2SD2318,2SD1944(60V,3A) HighDCcurrentgain.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1949

MediumPowerTransistor(50V,0.5A)

Features 1)Highcurrent.(IC=0.5A) 2)Lowsaturationvoltage,typicallyVCE(sat)=0.1VatIC/IB=150mA/15mA.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1949

NPNSiliconGeneralPurposeTransistor

FEATURES *Highcurrent.(IC=5A) *Lowsaturationvoltage,typicallyVCE(sat)=0.1VatIC/IB=150mA/15mA

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD1949

MediumPowerTransistor

Features ◾Highcurrent.(IC=5A) ◾Lowsaturationvoltage,typicallyVCE(sat)=0.1VatIC/IB=150mA/15mA.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1950

NPNSiliconEpitaxia

Features ●HighdccurrentgainandgoodhFE. ●Lowcollectorsaturationvoltage. ●HighVEBO.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1950

NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SD1950isdesignedforgeneral-purposeapplicationsrequiringHighDCCurrentGain. Thisissuitableforallkindofdrivingormuting. FEATURES ●HighDCCurrentGainandGoodhFElinearity. hFE=800to3200(VCE=5.0V,IC=1.0A) ●LowCollectorSaturationVoltage.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SD1950

OldCompanyNameinCatalogsandOtherDocuments

DESCRIPTION The2SD1950isdesignedforgeneral-purposeapplicationsrequiringHighDCCurrentGain. Thisissuitableforallkindofdrivingormuting. FEATURES ●HighDCCurrentGainandGoodhFElinearity. hFE=800to3200(VCE=5.0V,IC=1.0A) ●LowCollectorSaturationVoltage.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1950-T1-AZ

NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SD1950isdesignedforgeneral-purposeapplicationsrequiringHighDCCurrentGain. Thisissuitableforallkindofdrivingormuting. FEATURES ●HighDCCurrentGainandGoodhFElinearity. hFE=800to3200(VCE=5.0V,IC=1.0A) ●LowCollectorSaturationVoltage.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1953

DriverApplications??????

NPNEpitaxialPlanarSiliconTransistor 120V/1.5ADriverApplications Features ·Darlingtonconnection. ·HighDCcurrentgain. ·LowdependenceofDCcurrentgainontemperature. Applications ·Motordrivers,printerhammerdrivers,relaydrivers.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1957

PowerTransistor(120V,7A)

2SD1957PowerTransistor(120V,7A) 2SD2061PowerTransistor(60V,3A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1957

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SD1958

TVHorizontalDeflectionOutput,High-PowerSwitchingApplications

TVHorizontalDeflectionOutput High-CurrentSwitchingApplications Features ·Excellenttfpermittingefficientdrivewithlessinternaldissipation.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1958

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Lowcollectorsaturationvoltage APPLICATIONS •TVhorizontaldeflectionoutput •High-currentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1958

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Lowcollectorsaturationvoltage APPLICATIONS •TVhorizontaldeflectionoutput •High-currentswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

2SD19产品属性

  • 类型

    描述

  • 型号

    2SD19

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY HITACHI TRANSISTORTO-3P.FM 1500V 3A 40W BCE

2SD19供应商更多...

更新时间：2024-4-23 20:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
2SD1985
HITACHI
20+
TO-220F
38900
原装优势主营型号-可开原型号增税票
询价
深圳市威雅利发展有限公司
2SD1985
ON
01+
TO-22O
81
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科恒伟业电子有限公司
2SD1985
MAT
1738+
TO-220F
8529
科恒伟业!只做原装正品,假一赔十!
询价
深圳市博浩通科技有限公司
2SD1985(A)
MAY
23+
原厂原装
6000
全新原装
询价
深圳市汇莱威科技有限公司
2SD1985
ON
2320+
TO-22O
562000
16年只做原装原标渠道现货终端BOM表可配单提供样品
询价
深圳市华斯顿科技有限公司
2SD1985
ON
22+23+
TO-22O
51394
绝对原装正品现货,全新深圳原装进口现货
询价
深圳市得捷芯城科技有限公司
2SD1985
ON/安森美
23+
NA/
3331
原装现货,当天可交货,原型号开票
询价
深圳市赛特兴科技有限公司
2SD1985
ON
22+
TO-22O
81
正规渠道,只有原装!
询价
深圳市特顺芯科技有限公司
2SD1985
TO-220F
10000
全新
询价
深圳市芯祺盛科技有限公司
2SD1985
松下
1746+
TO220F
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价

2SD19芯片相关品牌

  • ABC
  • CIT
  • CONTRINEX
  • EPCOS
  • GMT
  • LRC
  • MOLEX5
  • OPLINK
  • Samtec
  • TOTAL-POWER
  • TSC
  • Vishay

2SD19规格书下载地址

2SD19参数引脚图相关

2SD19数据表相关新闻

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