位置：首页 > IC中文资料第1609页 > 2SD1899-Z
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD1899-Z | TO-252Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited |  |   |
2SD1899-Z | Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | | |
2SD1899-Z | NPNSiliconEpitaxialTransistor Features ●LowVCE(sat). ●HighhFE. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
2SD1899-Z | SILICONPOWERTRANSISTOR DESCRIPTION The2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFE:hFE=100to400 •LowVCE(sat):VCE(sat)≤0.25V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SD1899-Z | iscSiliconNPNPowerTransistor DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SD1899-Z | NPNSILICONEPITAXIALTRANSISTORMP-3 DESCRIPTION 2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFEhFE=100to400 •LowVCE(sat)VCE(sat)=0.3VCE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SD1899-Z | TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
TO-252Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | | | |
SiliconNPNtransistorinaTO-252PlasticPackage. Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
iscSiliconNPNPowerTransistor DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TO-252-2LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighTransitionFrequency | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
NPNPLASTICENCAPSULATETRANSISTORS NPNPLASTICENCAPSULATETRANSISTORS P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 |  | | |
NPNSILICONEPITAXIALTRANSISTOR 文件：1.35878 Mbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
2SD1899-Z产品属性
- 类型
描述
- 型号
2SD1899-Z
- 制造商
Renesas Electronics
- 功能描述
Cut Tape
- 制造商
Renesas
- 功能描述
Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) TO-252
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 银河微电子/COVAS |
TO252 |
7906200 |
|||||
CJ-长电 |
24+25+/26+27+ |
车规-元器件 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEC |
23+ |
TO-252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
RENESAS |
18+ |
TO-252 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
CJ/长电 |
23+ |
TO-251 |
30000 |
代理全新原装现货,价格优势 |
|||
DXC |
2013 |
TO-252 |
295 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DXC |
21+ |
TO-252 |
56000 |
公司进口原装现货 批量特价支持 |
|||
NEC |
2021+ |
TO251 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
2339+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
23+ |
TO-252 |
60 |
只做原装只有原装假一罚百可开增值税票 |
2SD1899-Z芯片相关品牌
2SD1899-Z规格书下载地址
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2019-2-15
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