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2SD16晶体管资料

  • 2SD16别名：2SD16三极管、2SD16晶体管、2SD16晶体三极管

  • 2SD16生产厂家：日本三肯公司

  • 2SD16制作材料：Si-NPN

  • 2SD16性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SD16封装形式：直插封装

  • 2SD16极限工作电压：100V

  • 2SD16最大电流允许值：6A

  • 2SD16最大工作频率：<1MHZ或未知

  • 2SD16引脚数：2

  • 2SD16最大耗散功率：80W

  • 2SD16放大倍数：

  • 2SD16图片代号：E-44

  • 2SD16vtest：100

  • 2SD16htest：999900

  • 2SD16atest：6

  • 2SD16wtest：80

  • 2SD16代换 2SD16用什么型号代替：BD130,BD245C,BDV95,BDX10,BDY20,BDY39,2N3055,2N5758,2N5759,3DD67D,

2SD16价格

参考价格：￥0.8514

型号：2SD1623S-TD-E 品牌：ON Semiconductor 备注：这里有2SD16多少钱，2024年最近7天走势，今日出价，今日竞价，2SD16批发/采购报价，2SD16行情走势销售排行榜，2SD16报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SD1601

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) •HighDCCurrentGain:hFE=1000(Min)@IC=2A •ComplementtoType2SB1101 APPLICATIONS •Designedforlowfrequencypoweramplifiersapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1602

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •HighDCCurrentGain:hFE=1000(Min)@IC=2A •ComplementtoType2SB1102 APPLICATIONS •Designedforlowfrequencypoweramplifiersapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1603

LOWFREQUENCYPOWERAMPLIFIERCOMPLEMENTPAIRWITH2SB1103AND2SB1104

SILICONNPNTRIPLEDIFFUSED LOWFREQUENCYPOWERAMPLIFIER COMPLEMENTARYPAIRWITH2SB1103AND2SB1104

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1603

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain:hFE=1000(Min)@IC=4A ·ComplementtoType2SB1103 APPLICATIONS ·Designedforlowfrequencypoweramplifiersapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1604

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •HighDCCurrentGain:hFE=1000(Min)@IC=4A •ComplementtoType2SB1104 APPLICATIONS •Designedforlowfrequencypoweramplifiersapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1604

LOWFREQUENCYPOWERAMPLIFIERCOMPLEMENTPAIRWITH2SB1103AND2SB1104

SILICONNPNTRIPLEDIFFUSED LOWFREQUENCYPOWERAMPLIFIER COMPLEMENTARYPAIRWITH2SB1103AND2SB1104

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1605

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •HighDCCurrentGain:hFE=1000(Min)@IC=1.5A •ComplementtoType2SB1105 APPLICATIONS •Designedforlowfrequencypoweramplifiersapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1606

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1606

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1608

MediumSpeedPowerSwitching

SiNPNTripleDiffusedPlanarDarlington MediumSpeedPowerSwitching ComplementaryPairwith2SB1108 Features •HighhFE •Highspeedswitching •FullPackpackageforsimplifiedmountingonlybyascrew,requiresnoinsulator.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SD1608

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=120V(Min) •HighDCCurrentGain:hFE=1000(Min)@IC=4A •HighSpeedSwitching APPLICATIONS •Designedformediumspeedpowerswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1609

SiliconNPNEpitaxial

Application Lowfrequencyhighvoltageamplifiercomplementarypairwith2SB1109and2SB1110

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1610

SiliconNPNEpitaxial

Application Lowfrequencyhighvoltageamplifiercomplementarypairwith2SB1109and2SB1110

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1611

SiliconNPNtriplediffusionplanartypeDarlington(Forpoweramplification)

SiliconNPNtriplediffusionplanartypedarlington Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •Highcollector-basevoltage(Emitteropen)VCBO •Ntypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectr

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD1611

SiliconNPNTripleDiffusionPlanarTypeDarlington

Features ●HighforwardcurrenttransferratiohFE ●Highcollector-basevoltage(Emitteropen)VCBO

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1614

NPNSiliconEpitaxialTransistor

■Features ●HighDCCurrentGain:hFE135to600. ●LowVCE(sat) ●Complementaryto2SB1114

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1614

NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SD1614isdesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SD1614

NPN-SiliconGeneraluseTransistors

NPN-SiliconGeneraluseTransistors 1W、1.5A、25V Applications：Canbeusedforswitchingandamplifyinginvarious electricalandelectroniccircuit.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SD1614

SILICONTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR POWERMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1615

WorldStandardMiniaturePackage

Features WorldStandardMiniaturePackage. LowVCE(sat)VCE(sat)=0.15V

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SD1615

NPNSiliconEpitaxialTransistor

Features ●WorldStandardMiniaturePackage. ●LowVCE(sat)VCE(sat)=0.15V

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1615

OldCompanyNameinCatalogsandOtherDocuments

DESCRIPTION 2SD1615,1615Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits. FEATURES •LowVCE(sat)VCE(sat)=0.15V •Complementto2SB1115,1115A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1615

OldCompanyNameinCatalogsandOtherDocuments

DESCRIPTION 2SD1615,1615Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits. FEATURES •LowVCE(sat)VCE(sat)=0.15V •Complementto2SB1115,1115A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1615

NPNSILICONEPITAXIALTRANSISTORSPOWERMINIMOLD

DESCRIPTION 2SD1615,1615Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits. FEATURES •WorldStandardMiniaturePackage •LowVCE(sat)VCE(sat)=0.15V •Complementto2SB1115,2SD1115A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SD1615A

NPNSILICONEPITAXIALTRANSISTORSPOWERMINIMOLD

DESCRIPTION 2SD1615,1615Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits. FEATURES •WorldStandardMiniaturePackage •LowVCE(sat)VCE(sat)=0.15V •Complementto2SB1115,2SD1115A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SD1615A

NPNSiliconEpitaxialTransistor

Features ●WorldStandardMiniaturePackage. ●LowVCE(sat)VCE(sat)=0.15V

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1615A

OldCompanyNameinCatalogsandOtherDocuments

DESCRIPTION 2SD1615,1615Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits. FEATURES •LowVCE(sat)VCE(sat)=0.15V •Complementto2SB1115,1115A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1616

NPNSiliconTransistor

NPNSiliconTransistor The2SD1616/2SD1616Aaredesignedforusein driverandoutputstagesofAFamplifiergeneral purposeapplication. ThetransistorissubdividedintothreegroupsR,O andY,accordingtoitsDCcurrentgain Onspecialrequest,thesetransistorscanbe manufacturedi

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
2SD1616

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SD1616

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●ComplementaryTransistorwithThe2SB1116

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SD1616

NPNEPITAXIALSILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR DESCRIPTION *Audiofrequencypoweramplifier *Mediumspeedswitching

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD1616

NPNSILICONTRANSISTORS

DESCRIPTION The2SD1616/2SD1616AaredesignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplication.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SD1616

NPNTransistors

NPNTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SD1616

TO-92Plastic-EncapsulateTransistors

FEATURES LowVCE(sat) ComplementaryTransistorwithThe2SB1116

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1616

SILICONTRANSISTORS

NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •LowVCE(sat): VCE(sat)=0.15VTYP.(IC=1.0A,IB=50mA) •LargePTinsmalldimensionwithversatility PT=0.75W,VCEO=50/60V,IC(DC)=1.0A •Complementarytransistorwitht

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1616A

SILICONTRANSISTORS

NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •LowVCE(sat): VCE(sat)=0.15VTYP.(IC=1.0A,IB=50mA) •LargePTinsmalldimensionwithversatility PT=0.75W,VCEO=50/60V,IC(DC)=1.0A •Complementarytransistorwitht

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1616A

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcollectorsaturationvoltage Highbreakdownvoltage Hightotalpowerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1616A

TO-92Plastic-EncapsulateTransistors

FEATURE Powerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1616A

NPNTransistors

NPNTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SD1616A

NPNSILICONTRANSISTORS

DESCRIPTION The2SD1616/2SD1616AaredesignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplication.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SD1616A

NPNEPITAXIALSILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR DESCRIPTION *Audiofrequencypoweramplifier *Mediumspeedswitching

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD1616A

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforaudiofrequencypoweramplifierandmedium-speedswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2SD1616A

NPNSILICONTRANSISTOR

DESCRIPTION 2SD1616AisNPNsiliconplanartransistordesignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplication.

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2SD1616A

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURE Powerdissipation

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
2SD1616A

NPNPlastic-EncapsulatedTransistor

FEATURES •Powerdissipation

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD1616A

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR（NPN） FEATURES ●Lowcollectorsaturationvoltage ●Highbreakdownvoltage ●Hightotalpowerdissipation

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SD1616A

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:120V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SD1616A

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURE Powerdissipation

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SD1616A_V01

TO-92Plastic-EncapsulateTransistors

FEATURE Powerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1616A-TA

TO-92Plastic-EncapsulateTransistors

FEATURE Powerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1618

Low-VoltageHigh-CurrentAmplifier,MutingApplications

Features ·Lowcollector-to-emittersaturationvoltage. ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1618

BipolarTransistor15V,0.7A,LowVCE(sat),NPNSinglePCP

Features •Lowcollector-to-emittersaturationvoltage •Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SD1618

PNPEpitaxialPlanarSiliconTransistors

■Features ●Lowcollector-to-emittersaturationvoltage. ●Verysmallsizemakingiteasytoprovidehighdensity, small-sizedhybridIC’s. ●Complementaryto2SB1118

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1618

Low-Voltage,High-CurrentAmp,MutingApplications

Features ·Lowcollector-to-emittersaturationvoltage. ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1618S-TD-E

BipolarTransistor15V,0.7A,LowVCE(sat),NPNSinglePCP

Features •Lowcollector-to-emittersaturationvoltage •Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SD1618T-TD-E

BipolarTransistor15V,0.7A,LowVCE(sat),NPNSinglePCP

Features •Lowcollector-to-emittersaturationvoltage •Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SD1619

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=25V(Min) •ComplementtoType2SB1119 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •DesignedforLFAmpElectronicGovernorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1619

LFAmp,ElectronicGovernorApplications

LFAmplifier,ElectronicGovernorApplications Features ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1619

PNPSiliconMediumPowerTransistor

FEATURES Powerdissipation PCM:500mW˄Tamb=25°C Collectorcurrent ICM:-1A Collector-basevoltage VB(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55ćto+150ć

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD1619

NPNEpitaxialPlanarSiliconTransistor

Features Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2SD16产品属性

  • 类型

    描述

  • 型号

    2SD16

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 100V 6A 80W BEC

2SD16供应商更多...

更新时间：2024-4-23 21:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
2SD1614
NEC
00+
SOT-89
52000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科芯源微电子有限公司
2SD1614
CJ/长电
24+
SOT89
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市科恒伟业电子有限公司
2SD1614
NEC
1942+
SOT-89
9852
只做原装正品现货或订货!假一赔十!
询价
深圳市振宏微科技有限公司
2SD1614
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市天成基业科技有限公司
2SD1614
NEC
20+/21+
SOT-89
9500
全新原装进口价格优势
询价
深圳市华瑞顺电子科技有限公司
2SD1614
科信
22+
SOT-89
12800
本公司只做进口原装!优势低价出售!
询价
深圳市航润创能电子集团有限公司
2SD1614
CJ
21+
SOT89
52520
原装现货假一赔十
询价
深圳市宏捷佳电子科技有限公司
2SD1614
NEC
2023+
SOT-89
50000
原装现货
询价
北京天阳诚业科贸有限公司
2SD1614
SHIKUES
23+
NA
200
双极晶体管
询价
深圳市得捷芯城科技有限公司
2SD1614
NEC
23+
NA/
6250
原装现货,当天可交货,原型号开票
询价

2SD16芯片相关品牌

  • ABC
  • CIT
  • CONTRINEX
  • EPCOS
  • GMT
  • LRC
  • MOLEX5
  • OPLINK
  • Samtec
  • TOTAL-POWER
  • TSC
  • Vishay

2SD16规格书下载地址

2SD16参数引脚图相关

2SD16数据表相关新闻

DdatasheetPDF页码索引

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