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2SD13晶体管资料
2SD13别名:2SD13三极管、2SD13晶体管、2SD13晶体三极管
2SD13生产厂家:日本松下公司
2SD13制作材料:Si-NPN
2SD13性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SD13封装形式:特殊封装
2SD13极限工作电压:35V
2SD13最大电流允许值:10A
2SD13最大工作频率:<1MHZ或未知
2SD13引脚数:3
2SD13最大耗散功率:100W
2SD13放大倍数:
2SD13图片代号:D-111
2SD13vtest:35
2SD13htest:999900
- 2SD13atest:10
2SD13wtest:100
2SD13代换 2SD13用什么型号代替:BD245,BDV91,2SC2681,3DD70B,
2SD13价格
参考价格:¥0.5950
型号:2SD1383KT146B 品牌:Rohm 备注:这里有2SD13多少钱,2024年最近7天走势,今日出价,今日竞价,2SD13批发/采购报价,2SD13行情走势销售排行榜,2SD13报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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SINPNTRIPLEDIFFUSEDMESA HorizontalDeflectionOutputforSmallColorTVSet | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNepitaxialplanertype(Forlow-voltageoutputamplification) Features .Lowcollector-emiitersaturationvoltageVce(sat) .LowONresistanceRon .Highforwardcurrenttransferratiohfe | PanasonicPanasonic Corporation 松下松下电器 | |||
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor foraudiomutingapplication. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations. Features ●Highemitter-basevoltageVEBO=7.5V(min)* ●HighreversehFE reversehFE=20(min)(VCE=2V,IC=4mA) ●Lowonresistan | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SiNPNEpitaxialPlanar 2SD1291 SiNPNTripleDiffusedMesa HorizontalDeflectionOutputforColorTVSet Features ●Built-indamperdiodeonchip ●Highvoltageandhighreliabilitybyglasspassivation. ●Wideareaofsafeoperation(ASO) 2SD1304 SiNPNEpitaxilaPlanar AFAmplifier Feature ●Built-inzener | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNEpitaxialPlanar 2SD1291 SiNPNTripleDiffusedMesa HorizontalDeflectionOutputforColorTVSet Features ●Built-indamperdiodeonchip ●Highvoltageandhighreliabilitybyglasspassivation. ●Wideareaofsafeoperation(ASO) 2SD1304 SiNPNEpitaxilaPlanar AFAmplifier Feature ●Built-inzener | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNEpitaxialPlanar 2SD1291 SiNPNTripleDiffusedMesa HorizontalDeflectionOutputforColorTVSet Features ●Built-indamperdiodeonchip ●Highvoltageandhighreliabilitybyglasspassivation. ●Wideareaofsafeoperation(ASO) 2SD1304 SiNPNEpitaxilaPlanar AFAmplifier Feature ●Built-inzener | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNEpitaxialPlanar 2SD1291 SiNPNTripleDiffusedMesa HorizontalDeflectionOutputforColorTVSet Features ●Built-indamperdiodeonchip ●Highvoltageandhighreliabilitybyglasspassivation. ●Wideareaofsafeoperation(ASO) 2SD1304 SiNPNEpitaxilaPlanar AFAmplifier Feature ●Built-inzener | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNEpitaxial Application Lowfrequencyamplifier,Muting | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial Application Lowfrequencyamplifier,Muting | HitachiHitachi, Ltd. 日立公司 | |||
SOT-23Plastic-EncapsulateTransistors ApplicationLow frequencyamplifier,Muting | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Application ●Lowfrequencyamplifier,Muting | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
SiliconNPNEpitaxial Application Lowfrequencyamplifier,Muting | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial Application Lowfrequencyamplifier,Muting | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION 1.WithTO-220package 2.Lowcollectorsaturationvoltage 3.DARLINGTON 4.Complementtotype2SB974 | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION ·HighDCCurrentGain:hFE=2000(Min)@IC=3A ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) ·LowCollector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=3A APPLICATIONS ·Designedforaudiofrequencyamplifierandlow-speedswitchingindustrialuse. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONEPITAXIALDARLINGTONTRANSISTOR AudioFrequencyAmplifierandLowSpeedSwitchingIndustrialUse | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPNSiliconTripleDiffusedTransistorAudioFrequencyPowerAmpllifier AudioFrequencyPowerAmpllifier | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
NPNSILICONTRIPLEDIFFUSEDTRANSISTOR AudioFrequencyPowerAmplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min) •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=3A APPLICATIONS •Designedforaudiofrequencypoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SD1312isdesignedforuseindriverandoutputstagesofaudiofrequencyamplifiers. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
POWERTRANSISTORS(25A,350V,200W)
| MOSPEC MOSPEC | |||
NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERAMPLIFIER,SWITCHINGAPPLICATIONS)
| TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PLpackage •Highpowerdissipation •Highcollectorcurrent •Highspeedswitching •Lowsaturationvoltage APPLICATIONS •Highpoweramplifierapplications •Highpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PLpackage •Highpowerdissipation •Highcollectorcurrent •Highspeedswitching •Lowsaturationvoltage APPLICATIONS •Highpoweramplifierapplications •Highpowerswitchingapplications | SAVANTIC Savantic, Inc. | |||
NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITCHING,MOTORCONTROLAPPLICATIONS) NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITCHING,MOTORCONTROLAPPLICATIONS) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SINPNTRIPLEDIFFUSEDPLANARDARLINGTON MediumSpeedPowerSwitching Features 30VZenerdiodebuilt-inbetweenCandB Verysmallfluctuationinbreakdownvoltages Largeenergyhandingcapability Highspeedswitching NTypepackageconfigurationwithacoolingfinfordirectsolderingonPCboardofasmall-sizeelec | PanasonicPanasonic Corporation 松下松下电器 | |||
SINPNTRIPLEDIFFUSEDPLANARDARLINGTON MediumSpeedPowerSwitching | PanasonicPanasonic Corporation 松下松下电器 | |||
SINPNTRIPLEDIFFUSEDPLANARDARLINGTON MediumSpeedPowerSwitching | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartypeDarlingtonFormidiumspeedpowerswitching MediumSpeedPowerSwitching | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartypeDarlingtonFormidiumspeedpowerswitching MediumSpeedPowerSwitching | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype(Forlow-voltageoutputamplification) SiliconNPNepitaxialplanertype Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LowONresistanceRon. ●HighfowardcurrenttransferratiohFE . | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNEpitaxialPlanarType SiliconNPNEpitaxialPlanarType Features LowONresistanceRon. Lowcollector-emittersaturationvoltageVCE(sat). HighfowardcurrenttransferratiohFE. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
DVDVideoRecorderServiceManual Feature General Afewsecondsaftertuningontheunit,youcanstartrecordingtoDVD-RAM,HDD. Youcanswitchtheoperationofthisfunction(ON/OFF)onthemenuscreen.. Quickstart(REC)principle Inthepower-offatQuickstart,onlypowersuppliesforvideoIC,tunerandstoragemediaare | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype(Forlow-voltageoutputamplification) SiliconNPNepitaxialplanertype Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LowONresistanceRon. ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualin | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min) •HighDCCurrentGain:hFE=1500(Min)@IC=5A,VCE=4V •HighSpeedSwitching APPLICATIONS •Highpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
2SD1341P 2SD1341P | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highvoltage •Built-indamperdiode APPLICATIONS •ForcolorTVhorizontaldeflectionoutputapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highvoltage •Built-indamperdiode APPLICATIONS •ForcolorTVhorizontaldeflectionoutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighSwitchingTime •LowCollectorSaturationVoltage:VCE(sat)=0.4V(Max)@IC=4A •WideAreaofSafeOperation •ComplementtoType2SB983 APPLICATIONS •Inverters,converters •ControllersforDCmotor,pulsemotor •Switchingpowersupplies •Generalpowerapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Large-CurrentDrivingApplications Large-CurrentDrivingApplications Features •AdoptionofFBET,MBITprocesses. •Lowsaturationvoltage. •LargecurrentcapacityandwideASO. Applcations •Powersupplies,relaydrivers,lampdrivers,electricalequipment. | SANYOSanyo 三洋三洋电机株式会社 | |||
50V/4ASwitchingApplications 50V/4ASwitchingApplications Features ·AdoptionofFBETandMBITprocesses. ·Lowsaturationvoltage. ·HighcurrentcapacityandwideASO. Applications ·Powersupplies,relaydrivers,lampdrivers,electricalequipment. | SANYOSanyo 三洋三洋电机株式会社 | |||
NPNDarlingtonTransistor NPNDarlingtonTransistor | SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD 新电元(上海)电器有限公司 | |||
SiliconNPNtriplediffusionplanertype Forhighbreakdownvoltageswitching ■Features •Highcollector-basevoltage(Emitteropen)VCBO •LargecollectorpowerdissipationPC •Lowcollector-emittersaturationvoltageVCE(sat) •Mtypepackage,allowingeasyautomaticandmanualinsertionaswellasstand-alonefixing | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanertype Forhighbreakdownvoltageswitching ■Features •Highcollector-basevoltage(Emitteropen)VCBO •LargecollectorpowerdissipationPC •Lowcollector-emittersaturationvoltageVCE(sat) •Mtypepackage,allowingeasyautomaticandmanualinsertionaswellasstand-alonefixing | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB988 •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneralpurposeapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB988 •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneralpurposeapplication | SAVANTIC Savantic, Inc. | |||
NPNComplementarySiliconPowerTransistors FEATURES ●Complementsthe2SB988. ●WideSafeOperationgArea. ●FastSwitchingSpeed. ●WideASO. APPLICATIONS ●PowerAmplifierApplications. ●VerticalOutputApplications. ●SwitchingApplications. | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80(Min) •GoodLinearityofhFE •ComplementtoType2SB989 APPLICATIONS •Designedforgeneralpurposeapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS. FEATURES: -HighDCCurrentGainof200to1200atVCE-5V,IC=0.5A -LowVCE(sat)of1.0V(Max.)atIC1A,IB-0.02A -CollectorPowerDissipationof30WatTc=25°C | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS. FEATURES: -HighDCCurrentGain:hFE-300(Max.)(VCE-5V,IC=0.5A) -LowSaturationVoltage :VCE(sat)=1.OV(Max.)(Ic-3A,IB-0.3A) -HighPowerDissipation:Pc-30W(Tc-25°C) -Complementaryto28B994 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
POWERAMPLIFIERAPPLICATIONS. FEATURES: -HighPowerDissipation:Pc30W(Te-25°C). -GoodLinearityofhee -Complementaryto2SB996 -Recommendedfor20-25WHighFidelityAudioFrequency AmplifierOutputStage'. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
HIGHPOWERSWITCHINGAPPLICATIONS.HAMMERDRIVE,PULSE.MOTORDRIVEAPPLICATIONS. FEATUREST -HighDCCurrentGain:hFg-2000(Min.)(atVCE3V,IC-3A) -LowSaturationVoltage:VCE(sat)=1.5V(Max.)(atIc=3A) -Complementaryto25B997,2SB998,25B999 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
HIGHPOWERSWITCHINGAPPLICATIONS.HAMMERDRIVE,PULSE.MOTORDRIVEAPPLICATIONS. FEATUREST -HighDCCurrentGain:hFg-2000(Min.)(atVCE3V,IC-3A) -LowSaturationVoltage:VCE(sat)=1.5V(Max.)(atIc=3A) -Complementaryto25B997,2SB998,25B999 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
HIGHPOWERSWITCHINGAPPLICATIONS.HAMMERDRIVE,PULSE.MOTORDRIVEAPPLICATIONS. FEATUREST -HighDCCurrentGain:hFg-2000(Min.)(atVCE3V,IC-3A) -LowSaturationVoltage:VCE(sat)=1.5V(Max.)(atIc=3A) -Complementaryto25B997,2SB998,25B999 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
HIGHCURRENTSWITCHINGAPPLICATIONS..POWERAMPLIFIERAPPLICATIONS. FEATURES: -HighCollectorCurrentIc=7A -LowSaturationVoltage :VCE(sat)=0.4V(Max.)(atIc=4A) -HighCollectorPowerDissipation :PC40W(atTc-25°C) -Complementaryto25B993 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNEpitaxial Application Lowfrequencypoweramplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial Application Lowfrequencypoweramplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial Application Lowfrequencypoweramplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial Application Lowfrequencypoweramplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB1001 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |
2SD13产品属性
- 类型
描述
- 型号
2SD13
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 1500V 3A 50W BEC
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Panasonic |
1822+ |
TO-92 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PANASONIC |
23+ |
TO-92B1 |
7750 |
全新原装优势 |
|||
PANASONIC/松下 |
23+ |
TO-92 |
90000 |
原装原盘 |
|||
Panasonic |
2017+ |
TO-92 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
HGF |
2023+ |
TO-92 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
SANYO |
05+ |
原厂原装 |
1051 |
只做全新原装真实现货供应 |
|||
PANASONIC/松下 |
2048+ |
TO-92 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
KEC环保 |
06+ |
TO-92 |
6000 |
||||
HGF/恒光发 |
TO-92 |
265209 |
假一罚十原包原标签常备现货! |
||||
SANYO-三洋 |
24+25+/26+27+ |
SOT-89-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
2SD13规格书下载地址
2SD13参数引脚图相关
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- 2SD1276
- 2SD1275
- 2SD1274
2SD13数据表相关新闻
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2018-12-19
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