2SD12晶体管资料

  • 2SD12别名:2SD12三极管、2SD12晶体管、2SD12晶体三极管

  • 2SD12生产厂家:日本松下公司

  • 2SD12制作材料:Si-NPN

  • 2SD12性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD12封装形式:直插封装

  • 2SD12极限工作电压:75V

  • 2SD12最大电流允许值:2.5A

  • 2SD12最大工作频率:<1MHZ或未知

  • 2SD12引脚数:2

  • 2SD12最大耗散功率:60W

  • 2SD12放大倍数

  • 2SD12图片代号:E-44

  • 2SD12vtest:75

  • 2SD12htest:999900

  • 2SD12atest:2.5

  • 2SD12wtest:60

  • 2SD12代换 2SD12用什么型号代替:BD150,BD245B,BDV93,BDX10,BDY20,BDY39,2N3055,2N4915,2SD895,2SD896,3DD65A,

2SD12价格

参考价格:¥1.1351

型号:2SD1207S 品牌:ON 备注:这里有2SD12多少钱,2024年最近7天走势,今日出价,今日竞价,2SD12批发/采购报价,2SD12行情走势销售排行榜,2SD12报价。
型号 功能描述 生产厂家&企业 LOGO 操作

MEDIUMPOWERTRANSISTOR

Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MEDIUMPOWERTRANSISTOR

Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MEDIUMPOWERTRANSISTOR(-80V,-0.7A)

[ROHM] Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

BipolarTransistor

Features •Lowcollector-to-emittersaturationvoltage •HighcurrentandhighfT •ExcellentlinearityofhFE •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1203/2SD1803-appliedsetssmaller Applications •Relaydrivers,high-speedinverters,converters,andot

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor

Features •Lowcollector-to-emittersaturationvoltage •HighcurrentandhighfT •ExcellentlinearityofhFE •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1203/2SD1803-appliedsetssmaller Applications •Relaydrivers,high-speedinverters,converters,andot

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNepitaxialplanertypedarlington(Forlow-frequencyamplification)

SiliconNPNepitaxialplanartypedarlington Forlow-frequencyamplification ■Features •ForwardcurrenttransferratiohFEisdesignedhigh,whichisappropriatetothedrivercircuitofmotorsandprinterhammer:hFE=4000to20000. •Ashuntresistorisomittedfromthedriver. •Mtype

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNepitaxialplanertypedarlington(Forlow-frequencyamplification)

SiliconNPNepitaxialplanartypedarlington Forlow-frequencyamplification ■Features •ForwardcurrenttransferratiohFEisdesignedhigh,whichisappropriatetothedrivercircuitofmotorsandprinterhammer:hFE=4000to20000. •Ashuntresistorisomittedfromthedriver. •Mtype

PanasonicPanasonic Corporation

松下松下电器

Panasonic

Large-CurrentSwitchingApplications

Large-CurrentSwitchingApplications Features •FBETandMBITprocessed(OriginalprocessofSANYO). •Lowsaturationvoltage. •LargecurrentcapacityandwideASO. Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Large-CurrentSwitchingApplications

Large-CurrentSwitchingApplications Features •FBETandMBITprocessed(OriginalprocessofSANYO). •Lowsaturationvoltage. •LargecurrentcapacityandwideASO. Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Large-CurrentSwitchingApplications

Features •FBETandMBITprocessed •Lowsaturationvoltage •LargecurrentcapacityandwideSOA Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Large-CurrentSwitchingApplications

Features •FBETandMBITprocessed •Lowsaturationvoltage •LargecurrentcapacityandwideSOA Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Wideareaofsafeoperation •HighDCcurrentgain •Darlington APPLICATIONS •PowerregulatorforlineoperatedTV

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Wideareaofsafeoperation •HighDCcurrentgain •Darlington APPLICATIONS •PowerregulatorforlineoperatedTV

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNEpitaxial,Darlington

•Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K)

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNEpitaxial,Darlington

Application •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxial,Darlington

•Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K)

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNEpitaxial,Darlington

Application •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxial,Darlington

Application •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONEPITAXIALDARLINGTONTRANSISTOR

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·HighDCCurrentGain :hFE=1000(Min.)@IC=10A ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) APPLICATIONS ·Designedforaudiofrequencypoweramplifierandlowspeedhighcurrentswitchingindustrialuse.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNepitaxialplanertype(Forlow-frequencyamplification)

Forlow-frequencyamplification Complementaryto2SB0987(2SB987) ■Features ●HighcollectortoemittervoltageVCEO. ●Optimumforthedriver-stageofalow-frequencyand40to60Woutputamplifier.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

30V/12AHigh-SpeedSwitchingApplications

30V/12AHigh-SpeedSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage: VCE(sat)=(–)0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Suitableforrelaydrivers,high-speedinverters, converters,andothergenerallarge-currentswitching

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Lowcollectorsaturationvoltage ·Largecurrentcapacity. ·Complementtotype2SB903 APPLICATIONS ·Suitableforrelaydrivers,high-speedinverters,converters,andothergenerallargecurrentswitchingapplications. ·High-speedswitchingapp

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Lowcollectorsaturationvoltage ·Largecurrentcapacity. ·Complementtotype2SB903 APPLICATIONS ·Suitableforrelaydrivers,high-speedinverters,converters,andothergenerallargecurrentswitchingapplications. ·High-speedswitchingapp

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Lowcollector-to-emittersaturationvoltage:VCE(sat)=0.4V(max.) •Largecurrentcapacity. •Complementtotype2SB904 APPLICATIONS •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Lowcollector-to-emittersaturationvoltage:VCE(sat)=0.4V(max.) •Largecurrentcapacity. •Complementtotype2SB904 APPLICATIONS •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Lowcollector-to-emittersaturationvoltage:VCE(sat)=0.4V(max.) •Largecurrentcapacity. •Complementtotype2SB904 APPLICATIONS •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

30V/20AHigh-SpeedSwitchingApplications

30V/12AHigh-SpeedSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SINPNPLANARDARLINGTON

SiNPNPlanarDarlington MediumSpeedPowerSwitching

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SINPNPLANARDARLINGTON

SiNPNPlanarDarlington MediumSpeedPowerSwitching Features ●Built-in60VzenerdiodebetweenCandB ●Uniformityinbreakdownvoltage ●Largeenergyhandlingcapability:Es/b=25mJ(min) ●Highspeedswitchingeitherathighorlowtemperatureenvironments

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SINPNPLANARDARLINGTON

SiNPNPlanarDarlington MediumSpeedPowerSwitching

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNEPITAXIALTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Complementaryto2SB905

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialTransistor

Features PowerAmplifierApplications

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATION)

AudioFrequencyPowerAmplifierApplication •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(typ.)(IC=3A,IB=0.3A) •Highpowerdissipation:PC=20W(Tc=25°C) •Complementaryto2SB906

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNEPITAXIALTYPE(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVE,POWERAMPLIFIERAPPLICATIONS)

SwitchingApplications HammerDrive,PulseMotorDriveApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=2A) •Complementaryto2SB907.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNEPITAXIALTYPE(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVE,POWERAMPLIFIERAPPLICATIONS)

SwitchingApplications HammerDrive,PulseMotorDriveApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A) •Complementaryto2SB908.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNEPITAXIALTYPE(PULSEMOTORDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS)

PulseMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=4000(min)(VCE=2V,IC=150mA) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SD1225

2SD1225

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors

MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors

MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor(32V,2A)

FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

2SD1228

2SD1228

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SB912 •HighDCcurrentgain •HighcurrentcapacityandwideASO •Lowsaturationvoltage APPLICATIONS •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DriverApplications??????????

DriverApplications Features •HighDCcurrentgain. •HighcurrentcapacityandwideASO. •Lowsaturationvoltage. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltagereguraltorcontrol.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SB912 •HighDCcurrentgain •HighcurrentcapacityandwideASO •Lowsaturationvoltage APPLICATIONS •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain:hFE=1500(Min.)@IC=4A,VCE=3V •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min.) •ComplementtoType2SB913 APPLICATIONS •Designedformotordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrolapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DriverApplications??????????

DriverApplications Features •HighDCcurrentgain. •HighcurrentcapacityandwideASO. •Lowsaturationvoltage. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

SANYOSanyo

三洋三洋电机株式会社

SANYO

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain:hFE=1500(Min.)@IC=4A,VCE=3V •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min.) APPLICATIONS •Designedformotordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrolapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

30V/8AHigh-SpeedSwitchingApplications

30V/8AHigh-SpeedSwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. ·Largecurrentcapacity. Applications ·Largecurrentswitchingofrelaydrivers,high-speedinverters,converters.

SANYOSanyo

三洋三洋电机株式会社

SANYO

80V/5ASwitchingApplications

Features ·Low-saturationcollector-to-emittrvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. ·Highcurrentcapacity. Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchingapplications.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB920L •Lowcollectorsaturationvoltage •Largecurrentcapacity. APPLICATIONS •Relaydrivers,highspeedinverters,converters,andothergeneralhigh-currentswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB920L •Lowcollectorsaturationvoltage •Largecurrentcapacity. APPLICATIONS •Relaydrivers,highspeedinverters,converters,andothergeneralhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

80V/7ASwitchingApplications

Applications ·Suitableforrelaydrivers,high-speedinverters,converters,andothergenrallargecurrentswitchingapplications. Features ·Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. ·Largecurrentcapacity.

SANYOSanyo

三洋三洋电机株式会社

SANYO

80V/12ASwitchingApplications

80V/12ASwitchingApplications Features •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •WideASOandhighlyresistanttobreakdown. Applications •Suittableforrelaydrivers,high-speedinverters,converters,andotherlarge-currentswitchingapplicati

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Lowcollectorsaturationvoltage •Wideareaofsafeoperation •Complementtotype2SB922L APPLICATIONS •Suitableforrelaydrivers,high-speedinverters,converters,andotherlargecurrentswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Lowcollectorsaturationvoltage •Wideareaofsafeoperation •Complementtotype2SB922L APPLICATIONS •Suitableforrelaydrivers,high-speedinverters,converters,andotherlargecurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SD12产品属性

  • 类型

    描述

  • 型号

    2SD12

  • 制造商

    ROHM

  • 制造商全称

    Rohm

  • 功能描述

    MEDIUM POWER TRANSISTOR

更新时间:2024-4-25 17:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
360000
原厂原装
1305
NEC
20+/21+
SOT-252
8900
全新原装进口价格优势
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
22+23+
TO252
75695
绝对原装正品现货,全新深圳原装进口现货
RENESAS
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
NEC
TO-252
608900
原包原标签100%进口原装常备现货!
NEC
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
NEC
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
NEC
07+
TO-252
36800
NEC
23+
SOT252
9365
价格优势、原装现货、客户至上。欢迎广大客户来电查询

2SD12芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

2SD12数据表相关新闻