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2SD12晶体管资料
2SD12别名:2SD12三极管、2SD12晶体管、2SD12晶体三极管
2SD12生产厂家:日本松下公司
2SD12制作材料:Si-NPN
2SD12性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SD12封装形式:直插封装
2SD12极限工作电压:75V
2SD12最大电流允许值:2.5A
2SD12最大工作频率:<1MHZ或未知
2SD12引脚数:2
2SD12最大耗散功率:60W
2SD12放大倍数:
2SD12图片代号:E-44
2SD12vtest:75
2SD12htest:999900
- 2SD12atest:2.5
2SD12wtest:60
2SD12代换 2SD12用什么型号代替:BD150,BD245B,BDV93,BDX10,BDY20,BDY39,2N3055,2N4915,2SD895,2SD896,3DD65A,
2SD12价格
参考价格:¥1.1351
型号:2SD1207S 品牌:ON 备注:这里有2SD12多少钱,2024年最近7天走势,今日出价,今日竞价,2SD12批发/采购报价,2SD12行情走势销售排行榜,2SD12报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MEDIUMPOWERTRANSISTOR Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(-80V,-0.7A) [ROHM] Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F. | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
BipolarTransistor Features •Lowcollector-to-emittersaturationvoltage •HighcurrentandhighfT •ExcellentlinearityofhFE •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1203/2SD1803-appliedsetssmaller Applications •Relaydrivers,high-speedinverters,converters,andot | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor Features •Lowcollector-to-emittersaturationvoltage •HighcurrentandhighfT •ExcellentlinearityofhFE •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1203/2SD1803-appliedsetssmaller Applications •Relaydrivers,high-speedinverters,converters,andot | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNepitaxialplanertypedarlington(Forlow-frequencyamplification) SiliconNPNepitaxialplanartypedarlington Forlow-frequencyamplification ■Features •ForwardcurrenttransferratiohFEisdesignedhigh,whichisappropriatetothedrivercircuitofmotorsandprinterhammer:hFE=4000to20000. •Ashuntresistorisomittedfromthedriver. •Mtype | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertypedarlington(Forlow-frequencyamplification) SiliconNPNepitaxialplanartypedarlington Forlow-frequencyamplification ■Features •ForwardcurrenttransferratiohFEisdesignedhigh,whichisappropriatetothedrivercircuitofmotorsandprinterhammer:hFE=4000to20000. •Ashuntresistorisomittedfromthedriver. •Mtype | PanasonicPanasonic Corporation 松下松下电器 | |||
Large-CurrentSwitchingApplications Large-CurrentSwitchingApplications Features •FBETandMBITprocessed(OriginalprocessofSANYO). •Lowsaturationvoltage. •LargecurrentcapacityandwideASO. Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring. | SANYOSanyo 三洋三洋电机株式会社 | |||
Large-CurrentSwitchingApplications Large-CurrentSwitchingApplications Features •FBETandMBITprocessed(OriginalprocessofSANYO). •Lowsaturationvoltage. •LargecurrentcapacityandwideASO. Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring. | SANYOSanyo 三洋三洋电机株式会社 | |||
Large-CurrentSwitchingApplications Features •FBETandMBITprocessed •Lowsaturationvoltage •LargecurrentcapacityandwideSOA Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Large-CurrentSwitchingApplications Features •FBETandMBITprocessed •Lowsaturationvoltage •LargecurrentcapacityandwideSOA Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Wideareaofsafeoperation •HighDCcurrentgain •Darlington APPLICATIONS •PowerregulatorforlineoperatedTV | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Wideareaofsafeoperation •HighDCcurrentgain •Darlington APPLICATIONS •PowerregulatorforlineoperatedTV | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxial,Darlington •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K) | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial,Darlington Application •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial,Darlington •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K) | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial,Darlington Application •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial,Darlington Application •Lowfrequencypoweramplifier •Complementarypairwith2SA1193(K) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSILICONEPITAXIALDARLINGTONTRANSISTOR ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION ·HighDCCurrentGain :hFE=1000(Min.)@IC=10A ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) APPLICATIONS ·Designedforaudiofrequencypoweramplifierandlowspeedhighcurrentswitchingindustrialuse. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNepitaxialplanertype(Forlow-frequencyamplification) Forlow-frequencyamplification Complementaryto2SB0987(2SB987) ■Features ●HighcollectortoemittervoltageVCEO. ●Optimumforthedriver-stageofalow-frequencyand40to60Woutputamplifier. | PanasonicPanasonic Corporation 松下松下电器 | |||
30V/12AHigh-SpeedSwitchingApplications 30V/12AHigh-SpeedSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage: VCE(sat)=(–)0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Suitableforrelaydrivers,high-speedinverters, converters,andothergenerallarge-currentswitching | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Lowcollectorsaturationvoltage ·Largecurrentcapacity. ·Complementtotype2SB903 APPLICATIONS ·Suitableforrelaydrivers,high-speedinverters,converters,andothergenerallargecurrentswitchingapplications. ·High-speedswitchingapp | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Lowcollectorsaturationvoltage ·Largecurrentcapacity. ·Complementtotype2SB903 APPLICATIONS ·Suitableforrelaydrivers,high-speedinverters,converters,andothergenerallargecurrentswitchingapplications. ·High-speedswitchingapp | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Lowcollector-to-emittersaturationvoltage:VCE(sat)=0.4V(max.) •Largecurrentcapacity. •Complementtotype2SB904 APPLICATIONS •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Lowcollector-to-emittersaturationvoltage:VCE(sat)=0.4V(max.) •Largecurrentcapacity. •Complementtotype2SB904 APPLICATIONS •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters. | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Lowcollector-to-emittersaturationvoltage:VCE(sat)=0.4V(max.) •Largecurrentcapacity. •Complementtotype2SB904 APPLICATIONS •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
30V/20AHigh-SpeedSwitchingApplications 30V/12AHigh-SpeedSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Largecurrentswitchingofrelaydrivers,high-speedinverters,converters. | SANYOSanyo 三洋三洋电机株式会社 | |||
SINPNPLANARDARLINGTON SiNPNPlanarDarlington MediumSpeedPowerSwitching | PanasonicPanasonic Corporation 松下松下电器 | |||
SINPNPLANARDARLINGTON SiNPNPlanarDarlington MediumSpeedPowerSwitching Features ●Built-in60VzenerdiodebetweenCandB ●Uniformityinbreakdownvoltage ●Largeenergyhandlingcapability:Es/b=25mJ(min) ●Highspeedswitchingeitherathighorlowtemperatureenvironments | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SINPNPLANARDARLINGTON SiNPNPlanarDarlington MediumSpeedPowerSwitching | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPNEPITAXIALTYPE(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Complementaryto2SB905 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNEpitaxialTransistor Features PowerAmplifierApplications | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNTRIPLEDIFFUSEDTYPE(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATION) AudioFrequencyPowerAmplifierApplication •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(typ.)(IC=3A,IB=0.3A) •Highpowerdissipation:PC=20W(Tc=25°C) •Complementaryto2SB906 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNEPITAXIALTYPE(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVE,POWERAMPLIFIERAPPLICATIONS) SwitchingApplications HammerDrive,PulseMotorDriveApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=2A) •Complementaryto2SB907. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNEPITAXIALTYPE(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVE,POWERAMPLIFIERAPPLICATIONS) SwitchingApplications HammerDrive,PulseMotorDriveApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A) •Complementaryto2SB908. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNEPITAXIALTYPE(PULSEMOTORDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS) PulseMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=4000(min)(VCE=2V,IC=150mA) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
2SD1225 2SD1225 | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor(32V,2A) FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
2SD1228 2SD1228 | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Complementtotype2SB912 •HighDCcurrentgain •HighcurrentcapacityandwideASO •Lowsaturationvoltage APPLICATIONS •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DriverApplications?????????? DriverApplications Features •HighDCcurrentgain. •HighcurrentcapacityandwideASO. •Lowsaturationvoltage. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltagereguraltorcontrol. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Complementtotype2SB912 •HighDCcurrentgain •HighcurrentcapacityandwideASO •Lowsaturationvoltage APPLICATIONS •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol. | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain:hFE=1500(Min.)@IC=4A,VCE=3V •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min.) •ComplementtoType2SB913 APPLICATIONS •Designedformotordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrolapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DriverApplications?????????? DriverApplications Features •HighDCcurrentgain. •HighcurrentcapacityandwideASO. •Lowsaturationvoltage. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol. | SANYOSanyo 三洋三洋电机株式会社 | |||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain:hFE=1500(Min.)@IC=4A,VCE=3V •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min.) APPLICATIONS •Designedformotordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrolapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
30V/8AHigh-SpeedSwitchingApplications 30V/8AHigh-SpeedSwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. ·Largecurrentcapacity. Applications ·Largecurrentswitchingofrelaydrivers,high-speedinverters,converters. | SANYOSanyo 三洋三洋电机株式会社 | |||
80V/5ASwitchingApplications Features ·Low-saturationcollector-to-emittrvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. ·Highcurrentcapacity. Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchingapplications. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB920L •Lowcollectorsaturationvoltage •Largecurrentcapacity. APPLICATIONS •Relaydrivers,highspeedinverters,converters,andothergeneralhigh-currentswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB920L •Lowcollectorsaturationvoltage •Largecurrentcapacity. APPLICATIONS •Relaydrivers,highspeedinverters,converters,andothergeneralhigh-currentswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
80V/7ASwitchingApplications Applications ·Suitableforrelaydrivers,high-speedinverters,converters,andothergenrallargecurrentswitchingapplications. Features ·Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. ·Largecurrentcapacity. | SANYOSanyo 三洋三洋电机株式会社 | |||
80V/12ASwitchingApplications 80V/12ASwitchingApplications Features •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •WideASOandhighlyresistanttobreakdown. Applications •Suittableforrelaydrivers,high-speedinverters,converters,andotherlarge-currentswitchingapplicati | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Lowcollectorsaturationvoltage •Wideareaofsafeoperation •Complementtotype2SB922L APPLICATIONS •Suitableforrelaydrivers,high-speedinverters,converters,andotherlargecurrentswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Lowcollectorsaturationvoltage •Wideareaofsafeoperation •Complementtotype2SB922L APPLICATIONS •Suitableforrelaydrivers,high-speedinverters,converters,andotherlargecurrentswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2SD12产品属性
- 类型
描述
- 型号
2SD12
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
MEDIUM POWER TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
360000 |
原厂原装 |
1305 |
||||
NEC |
20+/21+ |
SOT-252 |
8900 |
全新原装进口价格优势 |
|||
NEC |
2339+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
22+23+ |
TO252 |
75695 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
TO-252 |
608900 |
原包原标签100%进口原装常备现货! |
||||
NEC |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
NEC |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
07+ |
TO-252 |
36800 |
||||
NEC |
23+ |
SOT252 |
9365 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
2SD12规格书下载地址
2SD12参数引脚图相关
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2018-12-19
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